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We study the effects of static nonlocal Coulomb interactions in layered conventional superconductors and show that they generically suppress superconductivity and reduce the critical temperature. Although the nonlocal Coulomb interaction leads to a significant structure in the superconducting gap function, we find that most properties can be effectively described by means of an appropriately revised local Coulomb pseudopotential $\tilde{\mu}_C^*$, which is larger than the commonly adopted retarded Tolmachev-Morel-Anderson pseudopotential $\mu^*_C$. To understand this, we analyze the Bethe-Salpeter equation describing the screening of Coulomb interaction in the superconducting state and obtain an expression for $\tilde{\mu}_C^*$, which is valid in the presence of nonlocal Coulomb interactions. This analysis also reveals how the structure of the nonlocal Coulomb interaction weakens the screening effects from high-energy pair fluctuations and therefore yields larger values of the pseudopotential. Our findings are especially important for layered conventional superconductors with small Fermi energies and can be easily taken into account ab initio studies., Comment: 9 pages, 7 figures

Epitaxial semiconductor-superconductor heterostructures are promising as a platform for gate-tunable superconducting electronics. Thus far, the superconducting properties in such hybrid systems have been predicted based on simplified hybridization models which neglect the electronic structure that can arise at the interface. Here, we demonstrate that the hybrid electronic structure derived at the interface between semiconducting black phosphorus and atomically thin films of lead can drastically modify the superconducting properties of the thin metallic film. Using ultra-low temperature scanning tunneling microscopy and spectroscopy, we ascertain the moir\'e structure driven by the interface, and observe a strongly anisotropic renormalization of the superconducting gap and vortex structure of the lead film. Based on density functional theory, we attribute the renormalization of the superconductivity to weak hybridization at the interface where the anisotropic characteristics of the semiconductor band structure is imprinted on the Fermi surface of the superconductor. Based on a hybrid two-band model, we link this hybridization-driven renormalization to a weighting of the superconducting order parameter that quantitatively reproduces the measured spectra. These results illustrate the effect of interfacial hybridization at superconductor-semiconductor heterostructures, and pathways for engineering quantum technologies based on gate-tunable superconducting electronics.

We have probed the superconducting proximity effect through long high-quality monocrystalline Ag nanowires, by realizing Josephson junctions of different lengths, with different superconducting materials. Thanks to the high number of junctions probed, both the contact resistance and electron diffusion constant could be determined, enabling a comparison of the measured critical current to theoretical expectation, over the entire regime from short to long diffusive junction. Although the length dependence of the critical current is as expected, the amplitude of the $R_{N}I_c$ product is smaller than predicted by theory. We also address the magnetic field dependence of the critical current. The quasi-gaussian decay of the critical current with field expected of a long narrow junction is observed for all superconducting contacts we used except for aluminum. We present the striking non-monotonous effect of field on the critical current of junctions with aluminum contacts, and analyze it in terms of improved quasiparticle thermalization by a magnetic field.

Fabrication of silver nanowires (AgNWs) with fine and independent control of both the diameter (from 30 to 120 nm) and length (from 5 to 120 $\mu$m) by concomitant addition of co-nucleants and temperature control is demonstrated, and used for the preparation of size standards. Percolating random networks were fabricated using these standards and their optoelectronic properties were measured and compared with regard to the nanowire dimensions. The transparent electrodes appear suitable for various applications and exhibit excellent performances (e.g. 16 ohm sq --1 at 93% transparency), with haze values varying from 1.6 to 26.2%. Besides, in vitro toxicological studies carried out on murine macrophages with the same size standards revealed that AgNWs are weakly toxic (no toxicity observed below 50 $\mu$g mL --1 Ag), in particular compared to other silver nanoparticles. Short AgNWs (4 $\mu$m) appeared to be slightly more toxic than longer AgNWs (10 and 20 $\mu$m). Conversely, long AgNWs (20 $\mu$m) induced a more prolonged pro-inflammatory response in murine macrophages. These results contribute, in a safer by design approach, to promoting the use of short AgNWs. The global knowledge dealing with the combination of nanowire dimensions associated with optoelectronic performances and related toxicity should encourage the rational use of AgNWs, and guide the choice of the most adequate AgNW dimensions in an integrated approach.

Surface characterizations of an organophosphorus (OP) gas detector based on chemically functionalized silicon nanoribbon field-effect transistor (SiNR-FET) were performed by Kelvin Probe Force Microscopy (KPFM) and ToF-SIMS, and correlated with changes in the current-voltage characteristics of the devices. KPFM measurements on FETs allow (i) to investigate the contact potential difference (CPD) distribution of the polarized device as function of the gate voltage and the exposure to OP traces and, (ii) to analyze the CPD hysteresis associated to the presence of mobile ions on the surface. The CPD measured by KPFM on the silicon nanoribbon was corrected due to side capacitance effects in order to determine the real quantitative surface potential. Comparison with macroscopic Kelvin probe (KP) experiments on larger surfaces was carried out. These two approaches were quantitatively consistent. An important increase of the CPD values (between + 399 mV and + 302 mV) was observed after the OP sensor grafting, corresponding to a decrease of the work function, and a weaker variation after exposure to OP (between - 14 mV and - 61 mV) was measured. Molecular imaging by ToF-SIMS revealed OP presence after SiNR-FET exposure. The OP molecules were essentially localized on the Si-NR confirming effectiveness and selectivity of the OP sensor. A prototype was exposed to Sarin vapors and succeeded in the detection of low vapor concentrations (40 ppm)., Comment: Paper and supporting information, J. Phys. Chem. C, 2016

We report a detailed comparison on the role of a self-assembled monolayer (SAM) of dipolar molecules on the threshold voltage and charge carrier mobility of organic field-effect transistor (OFET) made of both amorphous and polycrystalline organic semiconductors. We show that the same relationship between the threshold voltage and the dipole-induced charges in the SAM holds when both types of devices are fabricated on strictly identical base substrates. Charge carrier mobilities, almost constant for amorphous OFET, are not affected by the dipole in the SAMs, while for polycrystalline OFET (pentacene) the large variation of charge carrier mobilities is related to change in the organic film structure (mostly grain size)., Comment: Full paper and supporting information