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Speckle patterns produced by coherent X-ray have a close relationship with the internal structure of materials but quantitative inversion of the relationship to determine structure from speckle patterns is challenging. Here, we investigate the link between coherent X-ray speckle patterns and sample structures using a model 2D disk system and explore the ability of machine learning to learn aspects of the relationship. Specifically, we train a deep neural network to classify the coherent X-ray speckle patterns according to the disk number density in the corresponding structure. It is demonstrated that the classification system is accurate for both non-disperse and disperse size distributions.

We report observations of nanosecond nanometer scale heterogeneous dynamics in a free flowing colloidal jet revealed by ultrafast x-ray speckle visibility spectroscopy. The nanosecond double-bunch mode of the Linac Coherent Light Source free electron laser enabled the production of pairs of femtosecond coherent hard x-ray pulses. By exploring the anisotropic summed speckle visibility which relates to the correlation functions, we are able to evaluate not only the average particle flow rate in a colloidal nanoparticle jet, but also the heterogeneous flow field within. The reported methodology presented here establishes the foundation for the study of nano- and atomic-scale heterogeneous fluctuations in complex matter using x-ray free electron laser sources.

Solid-phase epitaxy (SPE) and other three-dimensional epitaxial crystallization processes pose challenging structural and chemical characterization problems. The concentration of defects, the spatial distribution of elastic strain, and the chemical state of ions each vary with nanoscale characteristic length scales and depend sensitively on the gas environment and elastic boundary conditions during growth. The lateral or three-dimensional propagation of crystalline interfaces in SPE has nanoscale or submicron characteristic distances during typical crystallization times. An in situ synchrotron hard x-ray instrument allows these features to be studied during deposition and crystallization using diffraction, resonant scattering, nanobeam and coherent diffraction imaging, and reflectivity. The instrument incorporates a compact deposition system allowing the use of short-working-distance x-ray focusing optics. Layers are deposited using radio-frequency magnetron sputtering and evaporation sources. The deposition system provides control of the gas atmosphere and sample temperature. The sample is positioned using a stable mechanical design to minimize vibration and drift and employs precise translation stages to enable nanobeam experiments. Results of in situ x-ray characterization of the amorphous thin film deposition process for a SrTiO3/BaTiO3 multilayer illustrate implementation of this instrument., Comment: 28 pages, 6 figures

Burton-Cabrera-Frank (BCF) theory has proven to be a versatile framework to relate surface morphology and dynamics during crystal growth to the underlying mechanisms of adatom diffusion and attachment at steps. For an important class of crystal surfaces, including the basal planes of hexagonal close-packed and related systems, the steps in a sequence on a vicinal surface can exhibit properties that alternate from step to step. Here we develop BCF theory for such surfaces, relating observables such as alternating terrace widths as a function of growth conditions to the kinetic coefficients for adatom attachment at steps. We include the effects of step transparency and step-step repulsion. A general solution is obtained for the dynamics of the terrace widths, assuming quasi-steady-state adatom distributions on the terraces. An explicit simplified analytical solution is obtained under widely applicable approximations. From this we obtain expressions for the full-steady-state terrace fraction as a function of growth rate. Fits of the theoretical predictions to recent experimental determinations of the steady-state and dynamics of terrace fractions on GaN (0001) surfaces during organo-metallic vapor phase epitaxy give values of the kinetic coefficients for this system. In Appendices, we also connect a model for diffusion between kinks on steps to the model for diffusion between steps on terraces, which quantitatively relates step transparency to the kinetics of atom attachment at kinks, and consider limiting cases of diffusion-limited, attachment-limited, and mixed kinetics., Comment: 22 pages, 11 fig, 5 tables, 3 appendices, and Supplemental. For clarity, arXiv:2007.05083 was split into two distinct papers focusing on separate subtopics. This paper focuses on developing BCF theory in presence of non-identical step-edges. The other paper arXiv:2010.06166, on the scattering experiments whose interpretations required the extensions to BCF

Miscut surfaces of layered crystals can exhibit a stair-like sequence of terraces having periodic variation in their atomic structure. For hexagonal close-packed and related crystal structures with an {\alpha}{\beta}{\alpha}{\beta} stacking sequence, there have been long-standing questions regarding how the differences in adatom attachment kinetics at the steps separating the terraces affect the fractional coverage of {\alpha} vs. {\beta} termination during crystal growth. To demonstrate how surface X-ray scattering can help address these questions, we develop a general theory for the intensity distributions along crystal truncation rods (CTRs) for miscut surfaces with a combination of two terminations. We consider half-unit-cell-height steps, and variation of the coverages of the terraces above each step. Example calculations are presented for the GaN (0001) surface with various reconstructions. These show which CTR positions are most sensitive to the fractional coverage of the two terminations. We compare the CTR profiles for exactly oriented surfaces to those for vicinal surfaces having a small miscut angle, and investigate the circumstances under which the CTR profile for an exactly oriented surface is equal to the sum of the intensities of the corresponding family of CTRs for a miscut surface., Comment: 15 pages, 15 figures, Supplemental with 9 tables specifying coordinates of the 9 reconstructions examined. v2 has edits for clarity, addition of supplemental. (arXiv admin note: substantial text overlap with arXiv:2007.05083)

Images of the morphology of GaN (0001) surfaces often show half-unit-cell-height steps separating a sequence of terraces having alternating large and small widths. This can be explained by the $\alpha \beta \alpha \beta$ stacking sequence of the wurtzite crystal structure, which results in steps with alternating $A$ and $B$ edge structures for the lowest energy step azimuths, i.e. steps normal to $[0 1 \bar{1} 0]$ type directions. Predicted differences in the adatom attachment kinetics at $A$ and $B$ steps would lead to alternating $\alpha$ and $\beta$ terrace widths. However, because of the difficulty of experimentally identifying which step is $A$ or $B$, it has not been possible to determine the absolute difference in their behavior, e.g. which step has higher adatom attachment rate constants. Here we show that surface X-ray scattering can measure the fraction of $\alpha$ and $\beta$ terraces, and thus unambiguously differentiate the growth dynamics of $A$ and $B$ steps. We first present calculations of the intensity profiles of GaN crystal truncation rods (CTRs) that demonstrate a marked dependence on the $\alpha$ terrace fraction $f_\alpha$. We then present surface X-ray scattering measurements performed \textit{in situ} during homoepitaxial growth on (0001) GaN by vapor phase epitaxy. By analyzing the shapes of the $(1 0 \bar{1} L)$ and $(0 1 \bar{1} L)$ CTRs, we determine that the steady-state $f_\alpha$ increases at higher growth rate, indicating that attachment rate constants are higher at $A$ steps than at $B$ steps. We also observe the dynamics of $f_\alpha$ after growth conditions are changed. The results are analyzed using a Burton-Cabrera-Frank model for a surface with alternating step types, to extract values for the kinetic parameters of $A$ and $B$ steps. These are compared with predictions for GaN (0001)., Comment: 18 pages, 30 figures, 12 tables, 3 appendices. This is long paper to accompany "Do A or B Steps Have Faster Kinetics during Hexagonal Crystal Growth?" by same author list

The stacking sequence of hexagonal close-packed and related crystals typically results in steps on vicinal {0001} surfaces that have alternating A and B structures with different growth kinetics. However, because it is difficult to experimentally identify which step has the A or B structure, it has not been possible to determine which has faster adatom attachment kinetics. Here we show that in situ microbeam surface X-ray scattering can determine whether A or B steps have faster kinetics under specific growth conditions. We demonstrate this for organo-metallic vapor phase epitaxy of (0001) GaN. X-ray measurements performed during growth find that the average width of terraces above A steps increases with growth rate, indicating that attachment rate constants are higher for A steps, in contrast to most predictions. Our results have direct implications for understanding the atomic-scale mechanisms of GaN growth and can be applied to a wide variety of related crystals., Comment: Main paper: 11 pages, 8 figures; Supplemental: 8 pages, 12 figures. Version 3 is similar to v2, with additional edits to text and figures for clarity. In-depth descriptions of BCF (growth) model extended to alternating steps and CTR (scattering) analysis can be found at arXiv:2010.09575 and arXiv:2010.06166 (admin note: substantial text overlap with arXiv:2007.05083)

Understanding surface dynamics during epitaxial film growth is key to growing high quality materials with controllable properties. X-ray photon correlation spectroscopy (XPCS) using coherent x-rays opens new opportunities for in situ observation of atomic-scale fluctuation dynamics during crystal growth. Here, we present the first XPCS measurements of 2D island dynamics during homoepitaxial growth in the layer-by-layer mode. Analysis of the results using two-time correlations reveals a new phenomenon - a memory effect in island nucleation sites on successive crystal layers. Simulations indicate that this persistence in the island arrangements arises from communication between islands on different layers via adatoms. With the worldwide advent of new coherent x-ray sources, the XPCS methods pioneered here will be widely applicable to atomic-scale processes on surfaces., Comment: 13 page, 5 figures, also note additional supplementary document of 10 pages, 7 figures

In anticipation of the increased use of coherent x-ray methods and the need to upgrade beamlines to match improved source quality, we have characterized the coherence properties of the x-rays delivered by beamline 12ID-D at the Advanced Photon Source. We compare the measured x-ray divergence, beam size, brightness, and coherent flux at energies up to 26 keV to the calculated values from the undulator source, and evaluate the effects of beamline optics such as a mirror, monochromator, and compound refractive lenses. Diffraction patterns from slits as a function of slit width are analyzed using wave propagation theory to obtain the beam divergence and thus coherence length. Imaging of the source using a compound refractive lens was found to be the most accurate method for determining the vertical divergence. While the brightness and coherent flux obtained without a monochromator ("pink beam") agree well with those calculated for the source, those measured with the monochromator were a factor of 3 to 6 lower than the source, primarily because of vertical divergence introduced by the monochromator. The methods we describe should be widely applicable for measuring the x-ray coherence properties of synchrotron beamlines., Comment: 14 pages, 14 figures

Using in situ grazing-incidence x-ray scattering, we have measured the diffuse scattering from islands that form during layer-by-layer growth of GaN by metal-organic vapor phase epitaxy on the (1010) m-plane surface. The diffuse scattering is extended in the (0001) in-plane direction in reciprocal space, indicating a strong anisotropy with islands elongated along [1 $\overline{2}$ 10] and closely spaced along [0001]. This is confirmed by atomic force microscopy of a quenched sample. Islands were characterized as a function of growth rate G and temperature. The island spacing along [0001] observed during the growth of the first monolayer obeys a power-law dependence on growth rate G$^{-n}$, with an exponent $n = 0.25 \pm 0.02$. Results are in agreement with recent kinetic Monte Carlo simulations, indicating that elongated islands result from the dominant anisotropy in step edge energy and not from surface diffusion anisotropy. The observed power-law exponent can be explained using a simple steady-state model, which gives n = 1/4., Comment: 4 pages, 5 figures, ancillary material includes Supplement material (pdf) of 4 pages, 5 figures with details of analysis

We describe an instrument that exploits the ongoing revolution in synchrotron sources, optics, and detectors to enable in situ studies of metal-organic vapor phase epitaxy (MOVPE) growth of III-nitride materials using coherent x-ray methods. The system includes high-resolution positioning of the sample and detector including full rotations, an x-ray transparent chamber wall for incident and diffracted beam access over a wide angular range, and minimal thermal sample motion, giving the sub-micron positional stability and reproducibility needed for coherent x-ray studies. The instrument enables surface x-ray photon correlation spectroscopy, microbeam diffraction, and coherent diffraction imaging of atomic-scale surface and film structure and dynamics during growth, to provide fundamental understanding of MOVPE processes., Comment: 13 pages, 13 figures, published in RSI v2 revision, clarified several points for reader from suggestions of referees, fixed typo Please cite paper as : G. Ju, et al., Review of Scientific Instruments 88, 035113 (2017)

The surface orientation can have profound effects on the atomic-scale processes of crystal growth, and is essential to such technologies as GaN-based light-emitting diodes and high-power electronics. We investigate the dependence of homoepitaxial growth mechanisms on the surface orientation of a hexagonal crystal using kinetic Monte Carlo simulations. To model GaN metal-organic vapor phase epitaxy, in which N species are supplied in excess, only Ga atoms on a hexagonal close-packed (HCP) lattice are considered. The results are thus potentially applicable to any HCP material. Growth behaviors on c-plane ${(0 0 0 1)}$ and m-plane ${(0 1 \overline{1} 0)}$ surfaces are compared. We present a reciprocal space analysis of the surface morphology, which allows extraction of growth mode boundaries and direct comparison with surface X-ray diffraction experiments. For each orientation we map the boundaries between 3-dimensional, layer-by-layer, and step flow growth modes as a function of temperature and growth rate. Two models for surface diffusion are used, which produce different effective Ehrlich-Schwoebel step-edge barriers, and different adatom diffusion anisotropies on m-plane surfaces. Simulation results in agreement with observed GaN island morphologies and growth mode boundaries are obtained. These indicate that anisotropy of step edge energy, rather than adatom diffusion, is responsible for the elongated islands observed on m-plane surfaces. Island nucleation spacing obeys a power-law dependence on growth rate, with exponents of -0.24 and -0.29 for m- and c-plane, respectively., Comment: 30 pages, 40 figures

Surface chemistry is important across diverse fields such as corrosion and nanostructure synthesis. Unfortunately, many as-synthesized nanomaterials, including partially dealloyed nanoparticle catalysts for fuel cells, with highly active surfaces are not stable in their reactive environments, preventing widespread application. Thus, understanding instability by focusing on the structure-stability and defect-stability relationship at the nanoscale is crucial and will likely play an important role in meeting grand challenges. To this end, recent advances in imaging nanostructure stability have come via both electron, x-ray, and other techniques such as atomic force microscopy, but tend to be limited to specific sample environments and/or two-dimensional images. Here, we report investigations into the defect-stability relationship of silver nanoparticles to voltage-induced electrochemical dissolution imaged in-situ in three-dimensional (3D) detail by Bragg Coherent Diffractive Imaging (BCDI). We first determine the average dissolution kinetics by Stationary Probe Rotating Disk Electrode (SPRDE) in combination with inductively coupled plasma mass spectrometry (ICP-MS), which allows real-time in-situ measurement of Ag+ ions formation and the corresponding electrochemical current. We then observe the dissolution and redeposition processes in 3D with BCDI in single nanocrystals, providing unique insight about the role of surface strain, defects, and their coupling to the dissolution chemistry. The methods developed and the knowledge gained go well beyond a "simple" silver electrochemistry and are applicable to all electrocatalytic reactions where functional links between activity and stability are controlled by structure and defect dynamics., Comment: 15 pages, 5 figures

Bragg coherent x-ray diffractive imaging is a powerful technique for investigating dynamic nanoscale processes in nanoparticles immersed in reactive, realistic environments. Its temporal resolution is limited, however, by the oversampling requirements of 3D phase retrieval. Here we show that incorporating the entire measurement time series, which is typically a continuous physical process, into phase retrieval allows the oversampling requirement at each time step to be reduced leading to a subsequent improvement in the temporal resolution by a factor of 2 to 20 times. The increased time resolution will allow imaging of faster dynamics and of radiation dose sensitive samples. This approach, which we call "chrono CDI", may find use in improving time resolution in other imaging techniques.

We introduce a time-delayed beam splitting method based on the energy separation of x-ray photon beams. It is implemented and theoretically substantiated on an example of an x-ray optical scheme similar to that of the classical Michelson interferometer. The splitter/mixer uses Bragg-case diffraction from a thin diamond crystal. Another two diamond crystals are used as back-reflectors. For energy separation the back-reflectors are set at slightly different temperatures and angular deviations from exact backscattering. Because of energy separation and a minimal number (three) of optical elements, the split-delay line has high efficiency and is simple to operate. Due to the high transparency of diamond crystal, the split-delay line can be used in a beam sharing mode at x-ray free-electron laser facilities. The delay line can be made more compact by adding a fourth crystal.

This supplemental material gives additional detail on Experimental Methods and Hard X-ray FEL Source Characteristics, Calculation of Maximum Speckle Contrast, Extracting Contrast of Weak Speckle Patterns, Estimated Temperature Increase from X-ray Absorption, Split-Pulse XPCS Feasibility, and Sample Disturbance During Single Pulses., Comment: This is the supplemental material for arXiv:1207.2458 by the same authors entitled: "High Contrast X-ray Speckle from Atomic-Scale Order in Liquids and Glasses"

The availability of ultrafast pulses of coherent hard x-rays from the Linac Coherent Light Source opens new opportunities for studies of atomic-scale dynamics in amorphous materials. Here we show that single ultrafast coherent x-ray pulses can be used to observe the speckle contrast in the high-angle diffraction from liquid Ga and glassy Ni2Pd2P and B2O3. We determine the thresholds above which the x-ray pulses disturb the atomic arrangements. Furthermore, high contrast speckle is observed in scattering patterns from the glasses integrated over many pulses, demonstrating that the source and optics are sufficiently stable for x-ray photon correlation spectroscopy studies of dynamics over a wide range of time scales.

Thermodynamic theory is developed for the ferroelectric phase transition of an ultrathin film in equilibrium with a chemical environment that supplies ionic species to compensate its surface. Equations of state and free energy expressions are developed based on Landau-Ginzburg-Devonshire theory, using electrochemical equilibria to provide ionic compensation boundary conditions. Calculations are presented for a monodomain PbTiO$_3$ (001) film coherently strained to SrTiO$_3$ with its exposed surface and its electronically conducting bottom electrode in equilibrium with a controlled oxygen partial pressure. The stability and metastability boundaries of phases of different polarization are determined as a function of temperature, oxygen partial pressure, and film thickness. Phase diagrams showing polarization and internal electric field are presented. At temperatures below a thickness-dependent Curie point, high or low oxygen partial pressure stabilizes positive or negative polarization, respectively. Results are compared to the standard cases of electronic compensation controlled by either an applied voltage or charge across two electrodes. Ionic surface compensation through chemical equilibrium with an environment introduces new features into the phase diagram. In ultrathin films, a stable non-polar phase can occur between the positive and negative polar phases when varying the external chemical potential at fixed temperature, under conditions where charged surface species are not present in sufficient concentration to stabilize a polar phase., Comment: 53 pages, 24 figures

A coupling system between Gaussian type-microwave photon flux, static magnetic field and fractal membranes (or other equivalent microwave lenses) can be used to detect high-frequency gravitational waves (HFGWs) in the microwave band. We study the signal photon flux, background photon flux and the requisite minimal accumulation time of the signal in the coupling system. Unlike pure inverse Gertsenshtein effect (G-effect) caused by the HFGWs in the GHz band, the the electromagnetic (EM) detecting scheme (EDS) proposed by China and the US HFGW groups is based on the composite effect of the synchro-resonance effect and the inverse G-effect. Key parameters in the scheme include first-order perturbative photon flux (PPF) and not the second-order PPF; the distinguishable signal is the transverse first-order PPF and not the longitudinal PPF; the photon flux focused by the fractal membranes or other equivalent microwave lenses is not only the transverse first-order PPF but the total transverse photon flux, and these photon fluxes have different signal-to-noise ratios at the different receiving surfaces. Theoretical analysis and numerical estimation show that the requisite minimal accumulation time of the signal at the special receiving surfaces and in the background noise fluctuation would be $\sim10^3-10^5$ seconds for the typical laboratory condition and parameters of $h_{r.m.s.}\sim10^{-26}-10^{-30}$ at 5GHz with bandwidth $\sim$1Hz. In addition, we review the inverse G-effect in the EM detection of the HFGWs, and it is shown that the EM detecting scheme based only on the pure inverse G-effect in the laboratory condition would not be useful to detect HFGWs in the microwave band., Comment: 33 pages, 9 figures

Heat damage and thermal cycling tests on thin film cadmium sulfide solar cells