Search

Thanks to their record high refractive index and giant optical anisotropy, van der Waals (vdW) materials have accelerated the development of nanophotonics. However, traditional high refractive index materials, such as titanium dioxide (TiO2), still dominate in the most important visible range. This is due to the current lack of transparent vdW materials across the entire visible spectrum. In this context, we propose that germanium disulfide (GeS2) could offer a significant breakthrough. With its high refractive index, negligible losses, and biaxial optical anisotropy across the whole visible range, GeS2 has the potential to complement TiO2 and close the application gap of vdW materials in the visible spectrum. The addition of GeS2 could have a profound impact on the design of van der Waals nanophotonic circuits for any operation wavelength from ultraviolet to infrared, emphasizing the significance of the potential impact of GeS2 on the field of nanophotonics., Comment: 15 pages, 4 figures

The emergence of van der Waals (vdW) materials resulted in the discovery of their giant optical, mechanical, and electronic anisotropic properties, immediately enabling countless novel phenomena and applications. Such success inspired an intensive search for the highest possible anisotropic properties among vdW materials. Furthermore, the identification of the most promising among the huge family of vdW materials is a challenging quest requiring innovative approaches. Here, we suggest an easy-to-use method for such a survey based on the crystallographic geometrical perspective of vdW materials followed by their optical characterization. Using our approach, we found As2S3 as a highly anisotropic vdW material. It demonstrates rare giant in-plane optical anisotropy, high refractive index and transparency in the visible range, overcoming the century-long record set by rutile. Given these benefits, As2S3 opens a pathway towards next-generation nanophotonics as demonstrated by an ultrathin true zero-order quarter-waveplate that combines classical and the Fabry-Perot optical phase accumulations. Hence, our approach provides an effective and easy-to-use method to find vdW materials with the utmost anisotropic properties., Comment: 11 pages, 5 figures

With the advance of on-chip nanophotonics, there is a high demand for high refractive index, low-loss materials. Currently, this technology is dominated by silicon, but van der Waals (vdW) materials with high refractive index can offer a very advanced alternative. Still, up to now it was not clear if the optical anisotropy perpendicular to the layers might be a hindering factor for the development of vdW nanophotonics. Here, we studied WS2-based waveguides in terms of their optical properties and, particularly, in terms of possible crosstalk distance. Surprisingly, we discovered that the low refractive index in the direction perpendicular to the atomic layers improves the characteristics of such devices, mainly due to expanding the range of parameters at which single-mode propagation can be achieved. Thus, using anisotropic materials offers new opportunities and novel control knobs when designing the nanophotonic devices., Comment: 11 pages, 3 figures

Graphene/hBN heterostructures can be considered as one of the basic building blocks for the next-generation optoelectronics mostly owing to the record-high electron mobilities. However, currently, the studies of the intrinsic optical properties of graphene are limited to the standard substrates (SiO2/Si, glass, quartz) despite the growing interest in graphene/hBN heterostructures. This can be attributed to a challenging task of the determination of hBN's strongly anisotropic dielectric tensor in the total optical response. In this study, we overcome this issue through imaging spectroscopic ellipsometry utilizing simultaneous analysis of hBN's optical response with and without graphene monolayers. Our technique allowed us to retrieve the optical constants of graphene from graphene/hBN heterostructures in a broad spectral range of 250-950 nm. Our results suggest that graphene's absorption on hBN may exceed the one of graphene on SiO2/Si by about 60 %.

The growing families of two-dimensional crystals derived from naturally occurring van der Waals materials offer an unprecedented platform to investigate elusive physical phenomena and could be of use in a diverse range of devices. Of particular interest are recently reported atomic sheets of non-van der Waals materials, which could allow a better comprehension of the nature of structural bonds and increase the functionality of prospective heterostructures. Here, we study the optostructural properties of ultrathin non-van der Waals InGaS3 sheets produced by standard mechanical cleavage. Our ab initio calculation results suggest an emergence of authentically delicate out-of-plane covalent bonds within its unit cell, and, as a consequence, an artificial generation of layered structure within the material. Those yield to singular layer isolation energies of around 50 meVA-2, which is comparable with the conventional van der Waals material's monolayer isolation energies of 20 - 60 meVA-2. In addition, we provide a comprehensive analysis of the structural, vibrational, and optical properties of the materials presenting that it is a wide bandgap (2.73 eV) semiconductor with a high-refractive index (higher than 2.5) and negligible losses in the visible and infrared spectral ranges. It makes it a perfect candidate for further establishment of visible-range all-dielectric nanophotonics.

Transition metal dichalcogenides (TMDCs), belonging to the class of van der Waals materials, are promising materials for optoelectronics and photonics. In particular, their giant optical anisotropy may enable important optical effects when employed in nanostructures with finite thickness. In this paper, we theoretically and numerically study light scattering behavior from anisotropic MoS2 nanocylinders, and highlight its distinct features advantageous over the response of conventional silicon particles of the same shape. We establish two remarkable phenomena, appearing in the same MoS2 particle with optimized geometry. The first one is a pure magnetic dipole scattering associated with the excitation of the electric-dipole anapole states. Previously reported in core-shell hybrid (metal/dielectric) systems only, it is now demonstrated in an all-dielectric particle. The second phenomenon is the super-deflection in the far field: the maximum scattering may occur over a wide range of directions, including forward-, backward- and side-scattering depending on the mutual orientation of the MoS2 nanocylinder and the incident wave. In contrast to the well-known Kerker and anti-Kerker effects, which appear in nanoparticles at different frequencies, the super-deflection can be achieved by rotating the particle at a constant frequency of incident light. Our results facilitate the development of functional optical devices incorporating nanostructured anisotropic TMDCs and may encourage further research in meta-optics based on highly anisotropic materials.

Light emitters are bound to strongly interact with light through enhanced absorption and scattering, which imposes limitations on the design and performance of photonic devices such as solar cells, nanoantennas, and (nano) lasers. Overcoming these limitations forces the use of ineffective nonreciprocity approaches or separation of radiation and scattering in the frequency or time domain. A design that combines the properties of an efficient emitter in one state and the property of being invisible in another state is vital for various applications. In this work, we propose a nanolaser design based on a semiconductor nanoparticle with gain coated by a phase transition material (Sb2S3), switchable between lasing and cloaking (nonscattering) states at the same operating frequency without change in pumping. The operation characteristics of the nanolaser are rigorously investigated. The designed nanolaser can operate with optical or electric pumping and possesses attributes of a thresholdless laser due to the high beta-factor and strong Purcell enhancement in the strongly confined Mie resonance mode. We design a reconfigurable metasurface composed of lasing-cloaking metaatoms that can switch from lasing to a nonscattering state in a reversible manner.

Atomically thin transition metal dichalcogenides (TMDCs) present a promising platform for numerous photonic applications due to excitonic spectral features, possibility to tune their constants by external gating, doping, or light, and mechanical stability. Utilization of such materials for sensing or optical modulation purposes would require a clever optical design, as by itself the 2D materials can offer only a small optical phase delay - consequence of the atomic thickness. To address this issue, we combine films of 2D semiconductors which exhibit excitonic lines with the Fabry-Perot resonators of the standard commercial SiO$_2$/Si substrate, in order to realize topological phase singularities in reflection. Around these singularities, reflection spectra demonstrate rapid phase changes while the structure behaves as a perfect absorber. Furthermore, we demonstrate that such topological phase singularities are ubiquitous for the entire class of atomically thin TMDCs and other high-refractive-index materials, making it a powerful tool for phase engineering in flat optics. As a practical demonstration, we employ PdSe$_2$ topological phase singularities for a refractive index sensor and demonstrate its superior phase sensitivity compared to typical surface plasmon resonance sensors.

Light emitters in a single-mode nanolaser interact with the same cavity field, that gives rise to polarization correlations which transform the cavity mode. Usually these correlations are ignored, however, collective phenomena can lead to the distinct sub- and superradiance, whose fully quantum description is challenging. Here, we develop a simple yet rigorous picture of radiative transitions in single-mode nanolasers that accounts for polarization correlations. We show that the collective behavior of emitters modifies the photonic density of states leading to gain-dependent Purcell enhancement of spontaneous emission. Moreover, the stimulated emission rate is dependent on both the photon number and the laser lineshape. As the laser line narrows, stimulated emission becomes stronger than predicted by Einstein's relations and the nanolaser reaches the threshold earlier. Finally, we provide concise, ready-to-use expressions for spontaneous and stimulated emission rates seamlessly describing both conventional and superradiant nanolasers., Comment: 9 pages, 4 figures

Surface plasmon polariton amplification gives the possibility to overcome strong absorption in the metal and design truly nanoscale devices for on-chip photonic circuits. However, the process of stimulated emission in the gain medium is inevitably accompanied by spontaneous emission, which greatly increases the noise power. Here we present an efficient strategy for noise reduction in plasmonic amplifiers, which is based on gain redistribution along the amplifier. We show that even a very little gain redistribution (~3%) gives the possibility to increase the signal-to-noise ratio by about 100% and improve the bit error ratio by orders of magnitude., Comment: 4 figures