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A direct plated copper (DPC) metallized substrate technique is introduced and characterized in this article. The proposed DPC metallized substrate provides the main advantages of excellent thermal management and high-frequency characteristics, due to the use of ceramic substrates and metallized copper conductors. Therefore, in order to characterize the electrical properties of aDPC substrate for high-frequency applications, a simple experimental method was adopted to carry out the correlated values of dielectric constant and dielectric loss at Ku-band. In addition, a 10 GHz parallel-coupled line bandpass filter (BPF) was designed and fabricated by using the DPC substrate for verification. This BPF has a measured insertion loss of 0.5 dB and a return loss greater than 10 dB in the pass band, which indicates that the proposed DPC metallized substrate is very suitable for RF module packages and microwave components. [ABSTRACT FROM AUTHOR]

An improved BSIM4 large-signal model for a 0.13 μm RF CMOS transistor with lossy substrate description is presented in this article. To accurately accomplish the CMOS model for microwave circuit designs, the RLC networks representing the parasitic effects of layout and lossy substrate were added into the BSIM4 model. With the proposed simple extraction method for a lossy substrate, the lossy substrate networks can be constructed without any complicated calculations and curve-fitting procedures. A 0.13 pm gate-length NMOS transistor was measured and extracted through the extraction method in this work. According to the experimental results, good agreement has been realized between measured and modeled results up to 40 GHz in terms of device DC I-V, S-parameters, low-frequency noise and power characteristics. [ABSTRACT FROM AUTHOR]