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The article offers information on the indium phosphide (InP) high electron mobility transistor (HEMT) process which is capable of direct low-noise and power signal amplification. It mentions that the mixture of low-noise amplifiers (LNAs) and subharmonic mixer (SHM) translates the frequency band to an intermediate-frequency (IF) range. It states that transitions between the chip conductors and the package ports are formed by using a reactive-ion-etching (RIE) process.

The article presents information on new design of solar cells made from indium phosphide nanowires which is developed by researchers at the Lund University which is very efficient in capturing solar energy.

The article focuses on the hybrid silicon laser developed by the researchers from the University of California and Intel Corp. in California. This hybrid silicon laser was built through the standard silicon manufacturing processes, where light-emitting properties of indium phosphide were incorporated with the light-routing capabilities of silicon into a single hybrid chip. The laser is based on silicon which is capable to drive wider use of photonics in computers.

Deals with the collaboration between Alcatel and OMMIC, aimed at the transfer of the advanced indium-phosphide (InP) heterojunction-bipolar-transistor technology of Alcatel. Implication of the transfer for the commercial portfolio of OMMIC; Use of InP; Applications of InP in microelectronics.

Focuses on the contract given by the U.S. Defense Advanced Research Projects Agency to Vitesse Semiconductor Corp. concerning the use of sub-micron Indium Phosphide Heterojunction Bipolar Transmitter technology in developing integrated circuits. Terms stipulated in the contract; Application of semi-insulating substrates; Assistance to be given by of BAE Systems to Vitesse.

Reports on the indium phosphide(InP) heterojunction bipolar transistor foundry services offered by Vitesse Semiconductor Corp. through MOSIS. Information on the InP VIP-1 technology; Benefits of the VIP-1 process; Applications of the technology.

Reports the potential production and test advantages of vertical-cavity surface emitting lasers VCSEL. Improvement of VCSEL on indium phosphide; Problem of making high-reflection-coefficient mirrors; Occurrence of fabrication hurdles.

Deals with the indium phosphide (InP) process technology and services offered by Vitesse Semiconductor Corp. Strategic role of Vitesse's InP process in its foundry business; Applications of the InP process; Key features of the InP process.