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The article evaluates various power amplifiers including Aurora AS-AMP1 from Aurora, Bluesound Professional A860 from Bluesound and Ashly ne8250 from Ashly.

The article focuses on advancements in power amplifiers for electromagnetic attack (EA) applications driven by evolving threat trends, particularly the use of millimeter wave (mmW) seekers in missiles, which has led to new requirements for jamming performance across various platforms. It discusses the expansion of the global manufacturing base for EW power amplifiers, reflecting the growing significance of EA capabilities worldwide.

The article focuses on the design of a single-stage, 10 W gallium nitride (GaN) high electron mobility transistors (HEMT) power amplifier (PA) with broadband performance from 30 MHz to 1 GHz using a novel coaxial impedance transformer with ferrite beads. Topics discussed include software tools and models used by the PA design, design process of PA, and complete schematic of the PA.

This document provides information on various new products in the field of microwave and RF technology. The products include a waveguide amplifier with a frequency range of 40 to 60 GHz, a surface-mount LNA with a frequency range of 5.5 to 12.5 GHz, spring-loaded adapters for enhanced connectivity and RF performance, band-reject filters covering frequencies from 6 to 20 GHz, a Matter-compatible SoC for smart-home efficiency, a wideband signal generator with a frequency range of 0.1 to 44.0 GHz, Wilkinson power dividers designed for FirstNet applications, a sub-GHz linear power amplifier for UHF system development, and voltage-controlled SAW oscillators for radar applications. Each product is described in terms of its specifications and features. [Extracted from the article]

The article offers a review of power amplifiers, including the Ashly Audio CA-1.54, AtlasIED HPA2408, and Renkus-Heinz SA Series.

This article details the design and layout challenges associated with the electronic design of planar phased arrays and focuses on an RF front-end containing power amplifiers (PAs), low noise amplifiers (LNAs) and beamformers. The printed circuit board (PCB) layout discussion highlights a single cell, consisting of a beamformer surrounded by four transmit/receive (Tx/Rx) modules. Thermal management challenges are discussed, including component side heat sinking and heat sink cavity design with RF absorbers to avoid oscillations. [ABSTRACT FROM AUTHOR]

A broadband power amplifier (PA) design is based on a stepped impedance resonator (SIR). Compared with an open circuit microstrip line resonator, the SIR has a better frequency response. Precise harmonic control of the open microstrip line and the SIR matching circuit has the potential for broadband harmonic suppression as well. A multi-frequency method with four frequency points is used to design the matching structure to improve power and bandwidth performance. A broadband high efficiency 1 to 3.8 GHz PA designed using this method yields an output power of 39.7 to 41 dBm with a gain of 9.7 to 11 dB and efficiency greater than 60 percent. [ABSTRACT FROM AUTHOR]

The article discusses pSemi's PE562212, a multi-protocol front-end module (FEM) designed for IoT devices. The FEM offers versatile connectivity options, including Thread, Zigbee, Bluetooth BDR/EDR, Bluetooth LE, and low-to-medium Wi-Fi throughput. It is compact and highly integrated, with features such as an RF power amplifier, low-noise amplifier, and control logic. The PE562212 is suitable for various applications, including smart devices, IoT hubs, wearables, sensors, and industrial devices. It has impressive specifications, such as up to +21-dBm output power and a typical noise figure of 1.5 dB. The FEM simplifies PCB routing and is available in sample quantities. [Extracted from the article]

The article discusses using a hybrid electromagnetic (EM) device model, which includes EM wave interaction and coupling effects. Topics discussed including surge of use of mmWave frequencies due to the increased demand for wireless data, terrestrial and satellite communication systems will play a key role in wireless communication infrastructure.

The article presents the discussion on channel expansion and remote control where monitoring allowing sound system staffers, newbies, and veterans doing the work with confidence having high-pass filters in high impedance mode and a clip limiter.

The article offers information on the power amplifiers for electromagnetic attack (EA) applications. It further discusses traveling wave tube (TWT) technology and Gallium nitride (GaN) technology, achieving better performance at higher frequencies very quickly; the solidstate power amplifier's (SSPA's) performance; and airborne radar warning receivers (RWRs) and radar electronic support measures (ESM) systems.

This document provides information on several new products in the field of electronics. The SiT1811 oscillator from SiTime offers low power consumption and stability, making it suitable for consumer products. Mini-Circuits' model PMA3-5153+ is a surface-mount low-noise amplifier (LNA) with a wide frequency range. Mini-Circuits also offers a solid-state signal source module for the 900-MHz ISM band and an active frequency multiplier for various applications. Insight SiP's Bluetooth module is used by Eco-Counter for counting pedestrians and cyclists in smart city applications. [Extracted from the article]

Filtronic attended IMS 2024 with its Hercules II system for E-band links, which combines the Morpheus II transceiver and either a Cerus 4 or 8 solid-state power amplifier (SSPA). This system enhances high-speed backhaul networks and low-latency private networks by integrating the Morpheus X2 module and Cerus power amplifier, resulting in extended reach, enhanced coverage, and increased transmit power. The Hercules II also supports spectrally efficient modulation techniques and offers features such as high Tx saturated powers, low phase noise, and support for up to 512-QAM modulation. Filtronic's Cerus 32 module is a high-performance E-band SSPA that meets the demands of high-capacity wireless communication networks, while the Hades X2 E-band active diplexer achieves high efficiency and minimal power consumption for sustainable network deployments. [Extracted from the article]

The article offers news briefs related to mergers & acquisitions in the technology industry including Mini-Circuits acquiring Analog Devices' CATV amplifier business, Guerrilla RF acquiring Gallium Semiconductor's portfolio, and COMROD Communication AS acquiring a share of Triad RF Systems Inc.

The article discusses mmTron's development of Monolithic Microwave Integrated Circuit (MMIC) power amplifiers (PAs) and low noise amplifiers (LNAs) for Low Earth Orbit satellite systems, focusing on their performance and availability. Topics include the challenges faced in designing PAs for wideband applications, the specific design considerations for the TMC261 PA MMIC, and its features such as high linearity, power-added efficiency, and reliability for space applications.

A K-Band stacked-field-effect transistor (FET) power amplifier (PA) with high linearity and superior temperature stability is implemented in 90 nm trap-rich high-resistance SOI-CMOS technology. The PA adopts a two-stacked-FET architecture and low loss coplanar waveguide (CPW) matching networks to improve the RF output power and power-added efficiency (PAE). The PA with an area of 0.63 mm2 demonstrates a peak power gain of 14.6 dB at 23.5 GHz, a saturated output power of 14.2 dBm with a 3 dB bandwidth of 6 GHz and a peak PAE of 23.5 percent. The measured output third intercept point (OIP3) of 28.4 dBm represents a high linearity feature for 5G communication applications. The RF characteristics at different temperatures from -40°C to 125°C demonstrate superior temperature stability for automotive radar applications. [ABSTRACT FROM AUTHOR]

Artificial intelligence (AI) and machine learning (ML) technologies are pervasive in our daily life empowering devices ranging from smart speakers to thermostats, self driving cars to robots and social networks to banking systems. 1 A wide band Doherty power amplifier 8 and its modified version for dual-input Doherty power amplifier. Combined with innovative hardware design, AI and ML can become a powerful tool to assist RF engineers dealing with sophisticated PAs design and operating challenges. [Extracted from the article]

The article discusses a broadband, high efficiency, class J power amplifier (PA) design uses the relationship between drain efficiency and the ratio of drain-source capacitance to load impedance. Topics include to control harmonics at the output of a conventional class AB power amplifier to achieve high efficiency; and work analyzes the trend of drain-source capacitance with the drain-source voltage and proposes a circuit to compensate transistor output.

The article features the TR-3600 solid-state power amplifier (SSPA) developed by Pulse Systems (PSI) by taking advantage of advances in solid state gallium nitride (GaN) high-power radio frequency (RF) transistor technology. Topics discussed include advantages to using a solid-state radar over a conventional magnetron, key specifications, and functional components and architecture of the TR-3600 Solid-State Weather Radar Transmitter assembly that goes into the rack.

The article presents the 1/4 W linear power amplifiers (PA) a part of the company's expansion into the cellular market from Guerrilla RF.

The article discusses that the balanced amplifier has a lower VSWR withstand capability than that of the transistors used in its construction, meaning the maximum VSWR before the transistor will fail or its reliability degraded. It mentions that the revised VSWR withstand capability should be adopted for a balanced amplifier to prevent device failure; and examines the converse problem, namely determining the VSWR presented to the two internal amplifiers hence transistors.

Doherty power amplifiers (PA) are widely used below 6 GHz to improve power-added efficiency (PAE) for communications applications. Although the benefits of the Doherty architecture are compelling, the challenges of designing Doherty PAs increase as the frequency of operation moves toward mmWave. LDMOS, which is commonly used in discrete form below 6 GHz, has limited performance and more integrated approaches are needed to minimize parasitic inductances and capacitances. GaN technology offers significant performance advantages for realizing RF/microwave PAs. More recently, short gate length GaN on SiC MMIC processes have become commercially available, offering the possibility of designing high efficiency Doherty PAs at mmWave frequencies. This article will describe the design of a Doherty PA MMIC for the 5G frequency band at 28 GHz. First-pass design success was achieved using an asymmetric topology fabricated on the commercial 0.15 µm G28v5 GaN on SiC foundry process from Wolfspeed. The MMIC was assembled in a cost-effective, compact 4 mm x 4 mm QFN package. Details of the design, simulation, layout and packaging will be discussed. [ABSTRACT FROM AUTHOR]

The article evaluates several sound amplifiers, which include the mXa-1502 from Ashly Audio; the Tesira AMP-450P from Biamp Systems; and the DXE-CAT-RX3 from Aurora Multimedia.

The article informs that electronic warfare (EW) system designers can choose from a number of power amplifier technologies, such as traveling wave tubes (TWTs), LDMOS, microwave power modules (MPMs) and gallium arsenide (GaAs) or gallium nitride (GaN)-based solid-state power amplifiers (SSPAs). It also informs that the good news is that there are many power amplifier suppliers that are combining these technologies in their products to exploit the best performance traits.

The article evaluates several products related to the aerospace and defense, including the APUASYN20 compact signal source from AnaPico Ltd.; the CSC and CSI series SMT isolators and circulators from Cernex; and the 256-Element Tx/ Rx Ka-Band array from Cobham Advanced Electronic Solutions.

The article evaluates several electronics products, which include the Model 510050010 dual directional coupler from KRYTAR; the DLFCV-1600+ is a dual low pass filter from Mini-Circuits; and the P04N230450 four-way power divider/combiner from Fuzhou MIcable Electronic.

The article informs that GaN amplifier linearity is measured using three techniques: intermodulation distortion, noise power ratio and crest factor (CF). It mentions that the CF method proves to be more relevant to actual operating conditions, while demonstrating the advantages of greater accuracy, simplicity and lower cost. It also informs that GaN devices continue to be key elements in radar, electronic warfare, satellite and terrestrial communication systems.

The article focuses on the solid-state technologies such as gallium nitride (GaN) are transforming satcom. It mentions that several broad trends are creating new and more challenging requirements for the radio frequency front-end (RFFE) in satcom equipment; and also mentions the satcom industry has progressively moved to higher-frequency bands to support growing demand for bandwidth.

The article offers a review of several products including Broadband 15 W Power Amplifier by Agile Microwave Technology Inc.; Ultra-Agile Vector Signal Generator by AnaPico Ltd.; and 220 GHz Broadband VNA by Anritsu.

The article discusses that how III-V technology has evolved to meet continually changing market requirements and achieve production scale. It mentions that an underappreciated element in the market uptake of III-V products was the success of the pure-play foundry model; and also mentions the performance advantages of compound semiconductors have enabled GaAs to become the dominant front-end technology for the mobile communications that connect billions of people across the globe.

The article provides some analysis of and insight into amplifier efficiency. Topics discussed include role of waveform engineering to enhance the efficiency of a single-ended amplifier; use of Venn diagram for classification that helps identify where additional schemes are complementary and may further improve efficiency; and classification of efficiency enhancement mechanisms and their effects on class A and class B amplifiers.

The article offers information on several technology related products including model DVGA3-122+, a miniature front-end multichip module from Mini-Circuits; miniature SPDT switch product line from RLC Electronics Inc.; and 650 V SiC Schottky Diodes from Richardson RFPD.

The article offers information on rising popularity of mmWave 5G networks, as the rapid growth of consumer data demand. Topics discussed include challenge in mmWave in high attenuation along the propagation path; limitation of 5G mmWave networks by RF power and heat dissipation; and importance of minimizing loss in the metal/dielectric stack since transistors must drive transmission lines at the top metal levels.

Test & Measurement As 5G begins to leverage high-frequencymmWave bands, engineers that used to work atRF frequencies will once again need to sharpentheir skill sets and adopt newdesign and testing techniques The biggest challenge in testing5G devices, as opposedto 4G/LTE, is the relianceon active antenna arraysand high RF frequencies. Higher frequency bands combinedwith extended bandwidths in themmWave range will place much higherdemands on the components for 5Gcommunications devices and systems,including the filters, mixers, amplifiers,analog beamforming chipsets, andantennas. Today's systems can execute theantenna characterization or antennacheck using test solutions such as acompact antenna range that emulatesfar-field conditions within a smallerarea/footprint. [Extracted from the article]

In this article the author talks about the main factor driving the DOD's thrust into multifunction technology is the evolving sensor-to-shooter battle networks being fielded by Russia, China and others. Topics discussed include the integration of functions begins at the device level, in which functions performed by discrete processor units are combined in a single device, and a trend that the commercial world has been achieving for decades and continues to accelerate.

The article offers preview of several products including High Voltage Molded Power Inductors from Coilcraft, SPDT Manual Toggle Coaxial Switches from Logus Microwave, and Capacitor Application Program from Passive Plus Inc.

The article describes the design and evaluation for a four-channel, surface mount technology (SMT)-packaged power amplifiers (PA) for the 28 Gigahertz 5G NR band, offering a solution for 5G terminals. Topics covered include a block diagram of the four-channel PA integrated circuit (IC), the nominal drain supply voltage and the gate bias voltages so as to achieve the target quiescent currents and the means by which a temperature compensated detector output is created.

The article focuses on the designing of broadband power amplifier (PA) based on a GaN HEMT to achieve high-power and efficiency. It mentions the growing need for higher data rates and correspondingly wider bandwidths and also mentions the reducing of transistor's gate-source parasitic effect with a novel parasitic compensation circuit at the input.

Nonlinear systems, such as RF amplifiers, have two kindsof nonlinearities: the nonlinearity between the amplitudes ofthe input and output signals and the nonlinearity between thephases of the input and output signals. In systems with memory, the nonlinearity is frequency-dependent--for example, an RF amplifier. This experiment tries to estimate the Volterra kernels H[sub 1](f),H[sub 3](f), and H[sub 5](f) in a frequency band for an RF amplifier. [Extracted from the article]

The article offers suggestions for several amplifiers including the AMX ALRAMP-8 from AMX, Ashly nX3.02 from Ashly, and AtlasIED TitanONE from AtlasIED.

A dual-band continuous inverse class F mode power amplifier (PA) operates efficiently with a resistive third harmonic termination. Analysis predicts the effect of the resistive termination on drain efficiency and output power. Measurements demonstrate 10 W output power with 75 and 71 percent power-added efficiency (PAE) and greater than 13 dB gain at 0.8 and 2.4 GHz, respectively. [ABSTRACT FROM AUTHOR]

The article discusses the use of low-cost, plastic-packaged power amplifier intended for 28-Gigahertz 5G applications through a series of simulations. Topics discussed include a power amplifier (PA) must linearly amplify waveforms in order to have adequate gain and output power capability; the block diagram of the PA integrated circuit; and enabling a fast-switching enable circuit.

The article focuses on techniques supporting device modeling of III-V wide bandgap semiconductor technology, specifically the United Monolithic Semiconductors (UMS), gallium nitrate (GaN) on SiC process for mmWave power amplifiers (PA) targeting new communication and defense systems. It mentions Short gate-length GaN devices have demonstrated excellent performance for mmWave power amplifiers (PAs). It also mentions accuracy is validated through simulation and measurements of multiple designs.

Thermal analysis, simulation and benchtop testing of an X-Band transmitter RF power amplifier (RFPA) printed circuit board (PCB) for the University of Colorado, Boulder Earth Escape Explorer Deep Space CubeSat shows that FujiPoly XR-Um thermal interface material (TIM) provides a better solution compared to the alternatives considered. Results show a reduction in the operational temperature of the PCB from greater than 120°C to 77°C, which is below the maximum 85°C environmental operating temperature of the RFPA. [ABSTRACT FROM AUTHOR]

S-Band active aperture phased array radars require multiple power amplifiers (PA) producing sufficient RF output power with high power-added efficiency (PAE). GaN technology is now the preferred choice for many of these applications. This article describes the design, realization and evaluation of a PA for S-Band radar using a GaN power transistor from Qorvo. The QPD1020 has hybrid input matching, i.e., a GaN transistor with an internal passive input matching network fabricated on a cost-effective GaAs process. It offers the cost advantages and flexibility of a discrete transistor with many of the space and development time savings of a MMIC solution. The input of the device is internally matched to 50 Q across 2.7 to 3.5 GHz. As most S-Band radars will only use a portion of this band, the PA output match may be optimized for either output power or PAE across the intended operating band. PAs have been designed to optimize performance across 2.7 to 3.1 or 3.1 to 3.5 GHz by changing only the component values of the RF matching networks. This approach shortens development time compared to a discrete power bar solution. [ABSTRACT FROM AUTHOR]

This article describes an approach to extend the bandwidth of power amplifiers (PA) designed using resistive-reactive series of continuous class F modes (SCFM). By introducing third harmonic loads to the resistive-reactive SCFM PA, the overlap between the fundamental and harmonic impedances is solved and the operating bandwidth extended. Using this approach, a 0.5 to 2.3 GHz high efficiency PA was designed, with experimental results achieving 10 W output power and 59 to 79 percent drain efficiency from 0.5 to 2.3 GHz. [ABSTRACT FROM AUTHOR]

The 3.5 GHz band is emerging as prime 4G and 5G spectral real estate around the globe. Radio interfaces are evolving through LTE-Advanced and LTE-Advanced Pro, raising the bar on base station power amplifier (PA) capability and performance. Instantaneous signal bandwidth is the key to a suitable solution. This article outlines the fundamentals of PA design for a symmetrical, wideband Doherty using load-pull and introduces concepts such as "Doherty friendliness" and "digital predistortion (DPD) compatibility." The design example of a wideband Doherty PA (DPA) demonstrates a solution suitable for 3.5 GHz LTE-Advanced: a two-stage LDMOS DPA delivering 6.61 W average (35 W peak) at 37 percent efficiency, with 24.5 dB gain and over 300 MHz instantaneous signal bandwidth. [ABSTRACT FROM AUTHOR]