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1. GaN-Based Devices for Advanced RF Applications Puts Technology Building Blocks in the Spotlight.

Author

Parvais, Bertrand and Hao Yu

Subjects
*BREAKDOWN voltage, *POWER electronics, *CONDUCTION bands, *MODULATION-doped field-effect transistors
Abstract

The article discusses efforts of telecommunication industry to look for novel technologies to meet the need for mobile communication with growing demand for bandwidth. Topicsa discussed include advantage of Gallium nitride (GaN) technology for declined mmwWave communication, reduction of form factor of front-end module by GaN, and maturity of GaN-on-Si technology due to development of technology.

Published
2023

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