1. Determination of band alignment at two-dimensional MoS2/Si van der Waals heterojunction.
- Author
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Goel, Neeraj, Kumar, Rahul, Mishra, Monu, Gupta, Govind, and Kumar, Mahesh
- Subjects
HETEROJUNCTIONS ,VAN der Waals forces ,RAMAN spectroscopy ,MOLYBDENUM compounds ,ACTIVATION energy ,CHEMOMETRICS ,ENERGY bands ,CRYSTALLOGRAPHY - Abstract
To understand the different mechanism occurring at the MoS
2 -silicon interface, we have fabricated a MoS2 /Si heterojunction by exfoliating MoS2 on top of the silicon substrate. Raman spectroscopy and atomic force microscopy (AFM) measurement expose the signature of few-layers in the deposited MoS2 flake. Herein, the temperature dependence of the energy barrier and carrier density at the MoS2 /Si heterojunction has been extensively investigated. Furthermore, to study band alignment at the MoS2 /Si interface, we have calculated a valence band offset of 0.66 ± 0.17 eV and a conduction band offset of 0.42 ± 0.17 eV using X-ray and Ultraviolet photoelectron spectroscopy. We determined a type-II band alignment at the interface which is very conducive for the transport of photoexcited carriers. As a proof-of-concept application, we extend our analysis of the photovoltaic behavior of the MoS2 /Si heterojunction. This work provides not only a comparative study between MoS2 /p-Si and MoS2 /n-Si heterojunctions but also paves the way to engineer the properties of the interface for the future integration of MoS2 with silicon. [ABSTRACT FROM AUTHOR]- Published
- 2018
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