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Often, a depressed fill factor is observed in organic solar cells (OSCs), which is usually known as S-shaped current-voltage (J−V) characteristics. To investigate the origin of the depressed fill factor further, a poly[N-9-heptadecanyl-2,7-carbazole-alt-5,5-(4,7-di-2-thienyl-2,1,3-benzothiadiazole)]:[6,6]-phenyl C71 butyric acid methyl ester based OSC has been characterized through impedance spectroscopy. In addition, the photocurrent vs the applied effective bias plot reveals that the S-shaped J−V characteristics primarily reduce the diffusion current of the device. The present study shows that the diffusion current dominated section of photocurrent reduces with a slope of 2 in the depressed fill factor section given that the slope may further increase as per the impact of the S-shape. The reduction in the diffusion constant (Dn) in the S-shaped region supports the decrease in the diffusion current, which is observed through the photocurrent analysis. It is observed that, in the S-shaped section of the current-voltage characteristics, the transport time for free carriers increases up to 443 μs. The larger Urbach energy for the active layer of an S-shaped device demonstrates higher subbandgap disorder. Therefore, it is concluded that the accumulation of the charge carriers within the device and disorder in the active layer leads to the S-shaped current–voltage characteristics as well as poor carrier extraction. [ABSTRACT FROM AUTHOR]

Here, we demonstrate the effect of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) and molybdenum trioxide (MoO3) hole transport layers (HTLs) on degradation of the bulk-heterojunction organic solar cell (OSC) with the combination of two active layers—poly(3-hexylthiophene) and poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl]]. The study is performed for unencapsulated conventional structure OSCs exposed to the ambient dark condition. In the self-life test situation, it is found that PEDOT:PSS based devices show an initial higher short circuit current and subsequent faster degradation with time in comparison to the MoO3 based devices. The effects of these HTLs have been shown in terms of better charge extraction and a decrease in the shunt resistance as well as the bulk resistance of the active layer. The charge carrier generation probability evaluated from photocurrent data shows the dominant impact of active layer degradation rather than the oxidation of a top electrode under the ambient condition. This suggested mechanism is further supported by impedance spectroscopy as well as the evaluated transit time, global mobility, and exciton dissociation probability, establishing that the degradation does not much affect the transport property of the active material. Rather, it affects more the carrier generation rate. The low hole extraction barrier in PEDOT:PSS based devices show small transit time and high global mobility compared to MoO3. It is found that during the degradation process, the bulk resistance of the device significantly increases, which reduces the diffusion current in the device. [ABSTRACT FROM AUTHOR]

In this manuscript, conventional and inverted organic solar cells based on P3HT:PC[60]BM have been explored to understand the effect of deep defect states on the open circuit voltage. The enhancement in the open circuit voltage in the inverted structure compared to the conventional structure has been comprehensively discussed in terms of density of defect states. To comply with the investigation, DC and AC measurements (impedance spectroscopy) at various temperatures have been performed extensively. Enhancement in open circuit voltage at low temperature is observed which is described by the shifting of hole and electron quasi-Fermi levels. The important observation from the defect density of states profile is that the center of Gaussian distribution is shifted to high energy as the temperature is increased which is an indication of the creation of shallow traps in polymers. In the inverted device, the disorder parameter (σ) is 33 meV, whereas in the conventional device it becomes 75 meV. This implies that the energetic disorder is reduced in an inverted device which helps in the improvement of open circuit voltage. [ABSTRACT FROM AUTHOR]

The quality performance analysis of any solar cell can only be predicted through the parameters extracted from its current-voltage characteristics. Herein, we demonstrate an efficient analytical method to calculate the series resistance of organic solar cells without any pre approximation. It has been shown that the inaccuracy in series resistance takes place due to the high ideality factor of the organic based solar cells, usually ranging from 2-5. Using a systemic approach, we solved the single diode solar cell model to determine the series resistance expression. The dependence of series resistance on ideality factor of the device and the reverse saturation current calculation through the illuminated current-voltage characteristics has been presented here for the first time. The entire method has been programmatically realized in MATLAB. The extracted parameters values have been compared to the other methods for the proof of validation and it shows good agreement where as some outputs are better resolved. Additionally, the effectiveness of the present method is also matched with NREL certified silicon solar cell (reference cell model 60623) parameter extracted from K24XX cell software provided with PET cell tester model, CT200AAA solar simulators. The present proposed method is not restricted to the organic solar cell only but it can also be applied for the other type of solar cell as well. Therefore, the proposed method shows the relevance in the present scenario of solar cell research and development. [ABSTRACT FROM AUTHOR]