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Lead-free ceramics have attracted considerable research attention owing to their environmentally friendly properties as well as their relatively good piezoelectric properties. Herein, we doped BiCoO 3 (BCO) onto (Bi 0.5 Na 0.5)TiO 3 –6BaTiO 3 (BNT-6BT) solid solution at various concentrations and investigated their dielectric and piezoelectric properties. After comparing the Rietveld refinement data with X-ray diffraction (XRD) results, it was found that all the BNT-6BT- x BCO ceramics (x = 0, 0.5%, 1%, and 1.5%) showed the morphotropic phase boundary conformation with coexisting tetragonal (P4bm) and cubic (Pm 3 (＿) m) phases. XRD refinement data also demonstrated that with increasing BCO concentration to 1.5%, the mole ratio between the tetragonal and cubic phases was close to 1:1, which enhanced the piezoelectric performance of the ceramic composites. At a BCO concentration of 1.5%, the strain and piezoelectric coefficient (d 33) of the sample reached 0.31% and 196 pC/N, respectively. The highest effective d 33 * of 489 pm/V was obtained at 110 °C with BNT-6BT-1.5BCO ceramics. The BNT-6BT-xBCO ceramics show great promise for use in high-temperature actuator applications. [ABSTRACT FROM AUTHOR]

A novel lead-free, high dielectric constant, ultra-wide temperature stable dielectric ceramic Ba 1−x Bi x Ti 1−x −y Zn 0.75x W 0.25x+y O 3+y (0.22≤x≤0.30, y=0.015) was synthesized by the traditional solid-state reaction method. The phase composition, electric and dielectric properties of the Ba 1−x Bi x Ti 1−x −y Zn 0.75x W 0.25x+y O 3 ceramics were investigated. The P-V-L dielectric theory was introduced. And, the chemical bond energy was calculated to track the changes in micro-structure. The relationships between chemical bond energy and the macroscopic dielectric properties(ε r , dielectric stability and dielectric loss ) in Ba 1−x Bi x Ti 1−x−y Zn 0.75x W 0.25x+y O 3+y ceramics were discussed systematically. Owing to the inhomogeneous micro-structure and the diffusion in phase transition, Ba 1−x Bi x Ti 1−x−y Zn 0.75x W 0.25x+y O 3+y ceramics showed a stable permittivity (~800±15%) over a ultra-wide temperature range (−30 to 375 °C). Moreover, dielectric loss was less than 0.02 and the insulation resistance was over 10 12 Ω cm. These features suggested that the Ba 1−x Bi x Ti 1−x−y Zn 0.75x W 0.25x+y O 3+y ceramic could be considered as a promising candidate material for energy storage applications in harsh environment. [ABSTRACT FROM AUTHOR]

Multi-component BaTiO 3 –Bi 0.5 Na 0.5 TiO 3 –Nb 2 O 5 (BBNN) system doped with divalent metal ions (Zn 2+ , Co 2+ , Ni 2+ ) was prepared by the conventional solid–state method.The X-ray diffraction patterns revealed all samples exhibited perovskite (P4mm) single phase. The dielectric properties and micro-mechanisms were discussed and validated. Novel theories, based on the characteristics of the different kinds of dielectric polarization, are proposed to explain the dielectric anomalies in the dielectric system. The relationships between microstructure and the dielectric properties were investigated systematically for the first time. The samples doped with 15 mol% Zn 2+ /Co 2+ presented good dielectric properties of an ultra-broad temperature stable range (from −50 and >300), high dielectric constant (ε~1925 for Zn 2+ / ε~1341 for Co 2+ ) and low dielectric loss (tan δ<0.02) were obtained. These features made the ceramics system have high practical values for miniaturization and harsh environments applications. [ABSTRACT FROM AUTHOR]

BaSn 0.15 Ti 0.85 O 3 (BTS) thin films were deposited on Pt/Ti/SiO 2 /Si(1 0 0) substrate by pulsed laser deposition and the effects of substrate temperature on their structure, dielectric properties and leakage current density were investigated. The results indicate that the substrate temperature has a significant effect on the structural and dielectric properties of the BTS thin films which exhibit a polycrystalline perovskite structure if the substrate temperature ranges within 550–750 °C. The dielectric constant and loss tangent of the BTS thin films deposited at 650 °C are 341 and 0.009 at 1 MHz, respectively, the tunability is 72.1% at a dc bias field of 400 kV/cm, while the largest figure of merit (FOM) is 81.1. The effect of the substrate temperature on the leakage current of the BTS thin films is discussed. [ABSTRACT FROM AUTHOR]

To determine the mechanism of microwave response in AZrNb 2 O 8 (A: Mn, Zn, Mg, Co, et al.) wolframites, CuZrNb 2 O 8 ceramic with low sintering temperature (920 °C) is successfully fabricated by solid-state reaction method. Meanwhile, its structural stability is synthetically evaluated, the vibration modes are also calibrated. Except for the extrinsic factor like sintering temperature, the condition of Jahn-Teller ion Cu2+ as intrinsic part is characterized for the first time in relation to the microwave dielectric properties of the system. In virtue of Raman and EPR spectra, it is predicted that the electronic structure of transition metal ions, as the less concerned factor, may be influential on the dielectric properties of ceramics at microwave range, especially in the structure with mixed ion occupancy. In addition, the CuZrNb 2 O 8 ceramic is well matched with the silver electrode, which makes it a prospective candidate for temperature compensation material of LTCC (low-temperature co-fired ceramic) passive integration technology. [ABSTRACT FROM AUTHOR]

Low-loss (Zn 1- x Ni x )ZrNbTaO 8 (0.02 ≤  x  ≤ 0.10) ceramics possessing single wolframite structure are initiatively synthesized by solid-state route. Based on the results of Rietveld refinement, complex chemical bond theory is used to establish the correlation between structural characteristics and microwave performance in this ceramic system. A small amount of Ni 2+ ( x  = 0.06) in A-site with the fixed substitution of Ta 5+ in B-site can effectually raise the Q  ×  f value of ZnZrNb 2 O 8 ceramic, embodying a dense microstructure and high lattice energy. The dielectric constant and τ f are mainly affected by bond ionicity and the average octahedral distortion. The (Zn 0.94 Ni 0.06 )ZrNbTaO 8 ceramic sample sintered at 1150 °C for 3 h exhibits an outstanding combination of microwave dielectric properties: ε r = 27.88, Q × f  = 128,951 GHz, τ f = –39.9 ppm/°C. Thus, it is considered to be a candidate material for the communication device applications at high frequency. [ABSTRACT FROM AUTHOR]