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In this work we study and optimize the single solar cell efficiency of GaN x As 1-x-y Sb y and Ga 1-x In x N y As 1-y deposed on GaAs. The solar cells are simulated, in the aim to find the best concentration of nitrogen and antimony for GaN x As 1-x-y Sb y , and indium and nitrogen for Ga 1-x In x N y As 1-y which gives us a band gap energy around 1 eV with a low strain and a maximum absorption, in fact we do not have only one value but a whole interval for both structures. In the second step we simulate the efficiency of both GaNAsSb and GaInNAs solar cells with the find concentration values in order to see which of the two structures will give a higher efficiency. We noticed that the results were obtained under AM1.5 illumination, 300 K and an ambient pressure. The two structures had a thickness of 300 nm. The N and P layers have a doping level of 1.1015 cm-3 and 1.1016 cm-3 respectively. This study gives us the possibility to produce multi-function solar cells. [ABSTRACT FROM AUTHOR]

In this work we study and optimize the single solar cell efficiency of GaN x As 1-x-y Sb y and Ga 1-x In x N y As 1-y deposed on GaAs. The solar cells are simulated, in the aim to find the best concentration of nitrogen and antimony for GaN x As 1-x-y Sb y , and indium and nitrogen for Ga 1-x In x N y As 1-y which gives us a band gap energy around 1 eV with a low strain and a maximum absorption, in fact we do not have only one value but a whole interval for both structures. In the second step we simulate the efficiency of both GaNAsSb and GaInNAs solar cells with the find concentration values in order to see which of the two structures will give a higher efficiency. We noticed that the results were obtained under AM1.5 illumination, 300 K and an ambient pressure. The two structures had a thickness of 300 nm. The N and P layers have a doping level of 1.1015 cm-3 and 1.1016 cm-3 respectively. This study gives us the possibility to produce multi-function solar cells. [ABSTRACT FROM AUTHOR]

The main limitations of the conventional solar conversion device is that low energy photons cannot excite charge carriers to the conduction band, therefore do not contribute to the device's current, and high energy photons are not efficiently used due to a poor match to the energy gap. Currently, Quantum Dot Solar Cells QDSC are one of the most active research fields in the third generation solar cells which can resolve this problem. In the present work, we are interested in modeling and simulating of both standard GaAs p-i-n solar cell and GaSb/GaAs Quantum Dot Solar Cell QDSC. When comparing 40-layers GaSb/GaAs quantum dot solar cell with standard GaAs solar cell, the conversion efficiency in simulation results increased from 16.48% to 22.46%, which is relatively 36.3% increase. Also, the absorption range edge of photons with low energies extended from 900 to 1200 nm. The results reveal that the GaSb/GaAs quantum dot solar cell manifests much larger power conversion efficiency than that of p-i-n junction solar cells. [ABSTRACT FROM AUTHOR]

Al 2 O 3 deposited using Atomic layer Deposition (ALD) technique is known as an excellent material for p-type silicon surface passivation. However a post-deposition annealing step is needed to make the passivation effective. Thanks to coupled electrical measurements (capacitance and photoconductance) and chemical analyses (X-ray Photoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS)) carried out on the same p-type Cz silicon sample, a closer explanation of this activation process is given. The presence of hydrogen and oxygen is correlated to the evolution of the electrical parameters and the minority carrier lifetime for 0 to 60 min 450 °C annealing. [ABSTRACT FROM AUTHOR]