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• A new P-type transparent conductive LaSe 2 film with excellent photoelectric properties is found. • A novel two-step method is used to prepare LaSe 2 film. • Effect of annealing time on their photoelectric properties is investigated. • Results indicate that the best annealing time is 2 h. LaSe 2 films were prepared on sapphire (0001) substrates by combining magnetron sputtering and selenized annealing. The influence of selenized annealing time on the structures and photoelectric properties of the thin films were investigated using glancing incident X-ray diffraction, fourier transform infrared spectrometry and Hall effect measurements. The results showed that the film had a perfect monoclinic structure and a smooth surface morphology. The average transmittance in the mid-infrared range was greater than 55%, and the highest was 65%. The LaSe 2 films had a higher carrier concentration (∼1019 cm−3) and conductivity (∼1.9 S/cm) than those of other P-type transparent conductive films, which showed that LaSe 2 was a potential new P-type material. [ABSTRACT FROM AUTHOR]

Abstract As lanthanum oxide (La 2 O 3) has a large bandgap, it exhibits excellent optical properties. In this work, La 2 O 3 thin films are prepared by the sol-gel method from a lanthanum chloride (LaCl 3) precursor, on quartz and sapphire (0001) substrates. The effect of the annealing temperature (400–800 °C) on the optical properties of the La 2 O 3 films is investigated. The structure and optical properties are analyzed by X-ray diffraction, atomic force microscopy, scanning electronic microscopy, X-ray photoemission spectroscopy, Raman spectroscopy, ultraviolet (UV)–visible spectroscopy, Fourier transform infrared spectroscopy, and infrared variable angle spectroscopic ellipsometry. Results indicate that with an annealing temperature of ~600 °C, the roughness and optical properties of La 2 O 3 films can be significantly improved. Highlights • La 2 O 3 thin films are prepared by sol-gel method on quartz and sapphire substrates. • Effect of annealing temperature on their optical properties is investigated. • Results indicate that the best annealing temperature is around 600 °C. • The roughness and optical properties of films are significantly improved. [ABSTRACT FROM AUTHOR]

Abstract Transparent electronic technology has many urgent optoelectronic device applications. A key component of plasmonic materials in conventional semiconductors is the wide band gap of oxide thin films. Although transparent electronic materials have been developed for visible and near-infrared wavelengths, systems incorporating mid-infrared and far-infrared spectra are difficult to achieve. In this study, hydrated magnesium-carbon films, a new type of non-oxide transparent conductive thin films with a magnesium hydroxide structure, were generated using the three-step method. After annealing treatment, larger crystals in the thin films typically exhibited superior film resistivity, with conductivity values of approximately 8.63 × 10−3 Ω m. Due to the free electron concentration was not more than 1020 cm−3, the films demonstrated excellent optical properties, with plasma wavelength values of approximately 8 μm for infrared transmittance above 70%. After annealing, due to the Moss-Burstein (M-B) effect, the visible light transmittance was greater than 85% and the optical bandgap shifted towards the blue region. In addition, the influences of the sputtering power of the carbon target on the properties of hydrated magnesium-carbon film were also discussed in this paper. Graphical abstract Image 1 Highlights • We prepare hydrated magnesium-carbon films using the three-step method. • We analyze the effect of annealing on structural, electrical, and optical features. • Annealing leads to crystal growth, superior film resistivity, and good conductivity. • Films exhibit excellent optical properties, particularly for far-infrared ranges. • The films can replace TCO in the application of optical-electronic devices. [ABSTRACT FROM AUTHOR]

Abstract High-quality, transparent, conducting, p-type γ-CuI thin films are prepared via an innovative layer-by-layer procedure based on the traditional simple iodination of Cu films (referred to as the LBL-I method) at room temperature (RT). The structure, morphology, and optoelectronic properties of the γ-CuI are investigated as functions of the per layer thickness. The final thicknesses of LBL-I γ-CuI films are consistent with that in the film prepared by the traditional one-step method (TOS). X-ray diffraction analysis reveals that all the films are polycrystalline with the most dominant (111) direction of the zinc blende structure, indicating the facile and successful fabrication of γ-CuI. Compared with the TOS film, the LBL-I films display enhanced transmittance and mobility. The higher transmittance of >80% in the visible region of LBL-I films was attained due to the smaller root-mean-square roughness values of 23–28 nm. The 50 nm/ l LBL-I CuI films have mobility values of 6.9–9.4 cm2 V−1 s−1, and lower resistivity of 0.039–0.05 Ω cm, which assist studies on applications of γ-CuI thin films in transparent electronics. Highlights • High-quality electrooptical properties p-type γ-CuI thin films are prepared. • Innovative layer-by-layer approach based on Cu films iodination (LBL-I) is used. • LBL-I films show better transmittance and mobility than films prepared in one step. [ABSTRACT FROM AUTHOR]

Abstract In p-type γ -CuI thin films synthesized by the iodination of Cu layers with iodine vapor, a frosted-glass-like appearance with a rough surface is usually obtained, which makes it difficult to apply the γ -CuI films to transparent electronics. This paper proposes an innovative method for the preparation of highly transparent p-type γ -CuI films. A chemical reaction between Cu thin films and iodine vapor, combined with the layer-by-layer process at a temperature between room temperature and 120 °C are found to result in highly transparent polycrystalline γ -CuI films. The root-mean-square roughness values of the γ -CuI films prepared by this method are 8.5–21.2 nm, which are smaller than those for the γ - CuI films synthesized by the conventional method. The microstructure and optoelectronic properties of the γ-CuI thin films are sensitive to the temperature of iodine vapor. A high transmittance (80%) of the film obtained at an iodine vapor temperature of 80 °C has a low resistivity of 5 × 10−2 Ω cm and high mobility of 8.7 cm2/Vs. Moreover, a boosted figure of merit is realized due to the simultaneously low resistivity and high transparency: its value jumps from ∼488 to ∼1630 MΩ−1. Graphical abstract Unlabelled Image Highlights • A traditional iodination reaction method combined with the layer-by-layer process. • Simultaneously high transmittance and low resistivity. • A boosted figure of merit is realized. [ABSTRACT FROM AUTHOR]

Graphical abstract Highlights • A novel two-step method is developed to grow 2D Mg(OH) 2 nanoflakes. • The proposed method is environmentally benign. • The method does not require catalysts or harsh acid-base conditions. • The Mg(OH) 2 films had a crystalline hexagonal structure is dominant. • The water contact angle of 139° showed the good hydrophobicity of the film. Abstract A novel and environmentally benign two-step method has been developed to grow 2D magnesium hydroxide (Mg(OH) 2) nanoflakes. Our method relies on the deposition of Mg films by magnetron sputtering, followed by reaction with water vapor, and does not require any catalyst or harsh acid-base conditions. The 2D nanoflake surface morphology with a crystalline hexagonal structure was dominant on the Mg(OH) 2 films. The water contact angle on the film was ∼139°, which testified the good hydrophobicity of Mg(OH) 2 films due to the nanoflake surface. The self-cleaning effect of contaminant particles on hydrophobic Mg(OH) 2 films was analyzed. Compared with other preparation methods, this two-step method is more efficient, cleaner, and simpler, which make it suitable for complex or large-area substrate surfaces. In addition, this method can be applied to other metal hydroxides or oxides. [ABSTRACT FROM AUTHOR]

The hydrated magnesium-carbon films fabricated in this study are the novel-innovative non-oxide-type transparent electronic material. The films, which have a structure similar to that of magnesium hydroxide, were produced by making Mg x -C y films deposited by magnetron co-sputtering react with water vapor. As the extrinsic defect of hydration magnesium-carbon films, C atoms provided redundant electrons, resulting in a conductivity of approximately 3.31 × 10 −2  Ω·cm. Although the conductivity of hydrated magnesium-carbon films is not prominent comparing to the conventional and widely-used n-type TCO materials, e.g. ITO, the films also showed excellent optical properties, which can be attributed to their low bond energy, with the infrared transmittance of the films being greater than 72% for a plasma wavelength of approximately 10 μm. By varying the atomic C content of the films, a visible-region transmittance greater than 80% could be realized. The optical bandgap of the films was approximately 4.04–6.87 eV and was blue-shifted because of the Moss-Burstein effect. [ABSTRACT FROM AUTHOR]

The non-contact feature of the Laser/EMAT ultrasonic (LEU) technique is attractive for its NDT applications. However, it is challenging to apply it in thin structures because of the difficulties in the signal interpretations. In this work, the LEU technique is used to inspect the notch depths in thin steel plates. A Continuous Wavelet Transform (CWT)-based algorithm is developed to calculate the transmission coefficients of laser-generated Lamb waves. The effect of varying notch depths on Lamb waves’ transmission coefficients is investigated both numerically and experimentally. The transmission coefficients of laser-generated Lamb waves calculated using CWT have been used successfully to predict the notch depths in thin structures. [ABSTRACT FROM AUTHOR]

Vanadium pentoxide (V 2 O 5) films were deposited on sapphire substrates by radio frequency (R.F.) magnetron sputtering at 450 °C and annealed in various ambient atmospheres. The influence of ambient atmospheres on the structure, optical properties, and morphology of the thin films after annealing were characterized, and the transition behaviors in the annealing process were investigated by DSC, temperature-dependent Raman and FTIR. The results demonstrated that V 2 O 5 films underwent four different transition behaviors during post-deposition annealing due to the different oxygen proportion of ambient. Different products (VO 2 (B), VO 2 (R)) in the transition process were the main reason for the evolution of optical properties. No transition behaviors occurred because of the oxygen-rich ambient when annealed in air, and no significant change in infrared transmittance was observed. When annealed in 0.1% O 2 /Ar, the film was converted to VO 2 (B) with the decrease of infrared transmittance. In the case of 0.01% O 2 /Ar, metastable VO 2 (B) and VO 2 (R) were observed as intermediate crystalline phases before V 2 O 5 finally transformed to VO 2 (M), and the changes in the three stages of two drops and one rise were shown in infrared transmittance. While annealed in pure argon ambient, V 2 O 5 was turned into VO 2 (R) and VO 2 (M) without VO 2 (B) phase production, accompanied by a single change of infrared transmittance reduction and recovery. This provides a more detailed vanadium oxide thermal transition process and shows data reference for the preparation technology and application of vanadium oxide materials. • V 2 O 5 films were deposited on sapphire substrates by radio frequency (R.F.) magnetron sputtering; • Effect of the different oxygen proportion during annealing on thermal transition behaviors was investigated in detail by temperature-dependent Raman and FTIR; • The annealed V 2 O 5 films were transformed into V 2 O 5 , VO 2 (B), and VO 2 (M) by different thermal transition behaviors; • VO 2 (M) films with excellent thermochromic properties can be obtained by controlling the annealing atmosphere and temperature. [ABSTRACT FROM AUTHOR]

• A nanostructure was fabricated on the surface of Ti-Cu alloy. • The nanostructure was composed of TiO 2 , CuO and Cu 2 O. • The surface modified Ti-Cu alloy reduced inflammatory response. Once a biomaterial is implanted, inflammatory response will happen on the implant. Prolonged inflammatory events will decrease the implant success rate. Implants with nanostructured surfaces have been considered as an effective strategy to reduce inflammatory response. A TiO 2 nanostructured surface doped with CuO and Cu 2 O on Ti-Cu alloy was fabricated by NaOH, deionized water and heat treatments. The RAW 264.7 macrophages were used to research the inflammatory on the nanostructured surface. The nanostructure presented excellent cytocompatibility, but reduced inflammatory response by downregulating mRNA expressions of proinflammatory cytokines and secretion of proinflammatory cytokine, implying that the nanostructure might benefit implantation success. [ABSTRACT FROM AUTHOR]

In this paper, the single-doped (Ni-WO 3 and Ti-WO 3) and binary-doped (Ni-Ag-WO 3 and Ti-Ag-WO 3) amorphous WO 3 thin films were respectively prepared on indium-doped tin oxide conductive glass substrates by radio-frequency magnetron sputtering. Among the single-doped WO 3 thin films, the electrochromic (EC) properties of films can be enhanced by the presence of Ni or Ti. However, the low conductivity of WO 3 limits its application in EC devices. A novel approach was proposed to ameliorate this disadvantage which has not been explored, that is, the highly conductive Ag was introduced into WO 3 films with Ni or Ti. The experimental results show that the addition of Ag reduces the charge transfer resistance and shortens the ion diffusion path length, thereby improving the EC response time (Ni-Ag-WO 3 : t b =1.16 s; Ti-Ag-WO 3 : t c =4.14 s), electrochemical active area, and ion diffusion coefficients (Ni-Ag-WO 3 : D a =3.032 × 10−9 cm2/s; Ti-Ag-WO 3 : D c =7.737 × 10−9 cm2/s). Based on these work, the feasibility of Ni-Ag and Ti-Ag binary-doped WO 3 films was confirmed. These discoveries contribute to the exploration of preparing high-performance WO 3 EC films for the practical applications of EC devices such as in automatic anti-glare rearview mirrors. [ABSTRACT FROM AUTHOR]

The performance of atomic layer deposition films is mainly limited by precursor residues, low crystallinity and densities due to low deposition temperatures. Here, we used atomic layer deposition to deposit tin oxide thin films at a relatively low temperature of 250 °C. At this temperature, the change in the valence of Sn due to precursor residue is eliminated by layer-by-layer Ar plasma treatment, and the crystallinity of the films is improved. The effects of Ar plasma treatment power and Ar treatment time on the structural and optoelectronic properties were investigated. It was found that Ar plasma treatment time more significantly affects the surface morphology and the optical and electrical properties of the film. The film is transparent to both visible and near-infrared light over a wide range of wavelengths from 400 nm to at least 5000 nm. The film resistivity can be as low as 1.117 × 10−3 Ω·cm. The film has a relatively low level of residual stress due to the fact that there is no need to improve the crystallinity of the film by conventional high temperature annealing. On the basis of the high transparency and high conductivity of the SnOx films with layer by layer Ar plasma treatment in situ, the films can be applied as electromagnetic shielding windows for photodetectors. Unlabelled Image • The films exhibit excellent crystallinity and conductivity without the need for a high-temperature annealing step. • Ar plasma treatment significantly reduced the proportion of reduced Sn4+. • The plasma treatment time has a more pronounced effect on the SnOx crystallinity than the treatment power. • Designed and prepared an infrared transparent conductive film with excellent electrical properties and optical transmission [ABSTRACT FROM AUTHOR]

Due to the natural working mechanism of triboelectric nanogenerators (TENGs), potential energy stored by elastic materials may not be effectively converted into electric power, post mechanical triggering. Here, we report a practical bionic-jellyfish triboelectric nanogenerator (bjTENG) with polymeric thin film as the triboelectric material, which is shape-adaptive, with a hermetic package and a unique elastic resilience structure, similar to the behavior of a jellyfish. The charge separation in the elastic resilience of this bionic-structure is based on the liquid pressure-induced contact-separation of the triboelectric layers. On the basis of the conjunction of the triboelectrification and the electrostatic induction, a sustainable and enhanced output performance of 143 V, 11.8 mA/m 2 and 22.1 μC/m 2 under a low frequency of 0.75 Hz and at a water depth of 60 cm is produced, which can be used to supply power for dozens of green LEDs or a temperature sensor directly. More significantly, bjTENG is believed to be a priority technology which is attributable to its highly sensitivity, portability, and suitability for continuous detection of water level and fluctuation. Furthermore, a wireless self-powered fluctuation sensor early-warning system, which provides exact and wireless monitoring of fluctuation of a liquid surface, is also successfully developed. [ABSTRACT FROM AUTHOR]

Lead-free barium tin titanate BaTi 0.85 Sn 0.15 O 3 (BTS) ferroelectric thin films have been deposited on Pt/Ti/SiO 2 /Si substrates by pulsed laser deposition. The structure and dielectric properties of thin films deposited at various oxygen pressures are investigated systematically. By optimizing the oxygen pressure during the deposition, the structure and dielectric properties are improved. The thin films grown at 15 Pa have the best crystal quality and the largest grain size, which result in the enhancement of the dielectric properties. The dielectric constant and loss tangent show the similar trend in the entire oxygen pressure range. The influence mechanisms of the oxygen pressure on the structure and dielectric properties are proposed. The BTS thin films deposited at 15 Pa with large figure of merit (FOM) of 81.1, high tunability of 72.1%, moderate dielectric constant of 341, low loss tangent of 0.009 are considered to be appropriate as a field tunable ferroelectric material for electrically tunable devices. [ABSTRACT FROM AUTHOR]

The effects of post-deposition oxygen annealing temperature on the physical, chemical, and optical properties of gallium oxide (Ga 2 O 3) films were systematically studied in this work. First, Ga 2 O 3 films were deposited on Si (100) substrates by atomic layer deposition (ALD) and then annealed at 500–900 ℃, respectively. Several standard surface analysis methods were used to characterize the Ga 2 O 3 films before and after annealing. X-ray diffraction (XRD) patterns illustrated that the as-deposited amorphous film transitioned to β-phase after annealing at temperatures greater than 600 ℃. Atomic force microscopy (AFM) images showed that the grain size and roughness of the films significantly increased when annealed above 700 ℃. Transmission electron microscopy (TEM) tests presented that the interface microstructure was slightly affected by the annealing process. The effects of the annealing process on optical properties were performed using photoluminescence spectroscopy (PL) and spectroscopic ellipsometry (SE). Moreover, X-ray spectroscopy (XPS) was utilized to extract the oxygen vacancy (V O) concentration, bandgap, and the energy band alignment of Ga 2 O 3. With increasing annealing temperature, it was found that the atomic ratio of O/Ga increased while V O decreased monotonically from 47.4 % to 27.0 %. Density functional theory (DFT) simulation further accounted for energy band shifts resulting from the variation of V O. This study provides a means to achieve high-quality β-Ga 2 O 3 films, highly significant for applications of β-Ga 2 O 3 -based ultraviolet photodetectors and other relevant devices. • The temperature-dependent annealing effect on chemical state, microstructure, and optical properties of Ga 2 O 3 film is systematically studied. • The relationship of the band structure with annealing temperature and oxygen vacancy defects is established. • The energy bandgap of Ga 2 O 3 can be tuned from 4.75 eV to 4.94 eV by controlling the annealing temperature. • The DFT theoretical calculation combined with XPS results gives insight into the effect of oxygen vacancy defects on the properties of the Ga 2 O 3. [ABSTRACT FROM AUTHOR]

Atom passivation with halogen shows the best performance for PbS CQDs optoelectronic application for its short distance and stability via preventing oxidized to CQDs surface. Chlorine is hardly researched for its high activity and low binding energy to Pb. Here, lead halide was used as precursor by surface ligand engineering, introducing halogen during synthesis before ligand exchange and film deposition. Halogen of precursor was proved on the surface of as synthesized CQDs and still passivated on the surface after phase transfer ligand exchange by PbI 2. Mixed halogen surface passivation layer balance the height and width of tunneling barrier between two adjacent CQDs which improving photo detector current and performance. Our works provide Cl doping passivation method but also elucidate understanding of the impact of photo detection performance via mixed halogen passivation. [ABSTRACT FROM AUTHOR]

Incorporation of thermal responsive nanofillers is a promising strategy to induce thermal responsiveness in thin film nanocomposite (TFN) polyamide NF membranes. In this work, thermal responsive zwitterionic nanocapsules (ZN C s) were embedded in the polyamide (PA) active layers to form thermal responsive water transporting channels for thermal responsive nanofiltration performance. The impact from loading level, diameter, cross-linker ratio, and core/shell ratio of ZN C s on the structure, nanofiltration (NF) performance, and thermal responsive sensitivity of TFN membranes were systematically investigated. It was found that ZN C s with the diameter of 100–110 nm, cross-linker ratio of 50 wt% and core/shell ratio of 3:1, and loading level of 0.01% w/v in aqueous phase had induced the highest permeance change slope of 1.04 L m−2 h−1·bar−1 °C−1 (LMHBC) and flux change slope of 6.24 L m−2·h−1·°C −1(LMHC) for ZN C s-TFN membrane, which was 8.7 times higher than that of the pristine TFC-PA NF membranes. The water flux of such ZN C s-TFN membrane increased from 57 L m−2 h−1 (LMH) to 88 LMH at 0.6 MPa from 25 °C to 30 °C without losing its salt rejection rates. [Display omitted] • High thermal-responsiveness NF membranes were developed by embedding thermal responsive zwitterionic nanocapsules (ZN C s). • Embedding ZN C s could increase water flux without sacrificing salt rejections of NF membranes. • Performance of NF membranes could be tuned by the structure parameters of ZN C s. [ABSTRACT FROM AUTHOR]

Interface engineering has emerged as a fertile and efficacious approach to turn functional properties in the field of film systems. In this work, the interfacial properties of sputtered yttrium oxide films on zinc sulfide substrate (Y 2 O 3 /ZnS) were analyzed by transmission electron microscopy (TEM), X-ray photoelectron spectrum (XPS) depth profile and nano-scratch measurement. An interface layer with the depth of 20 nm between Y 2 O 3 film and ZnS substrate was directly observed by TEM. Under different film growth conditions, although the interfacial features including interfacial width and composition distribution exhibit similar behavior, it is found that higher cohesive strength is obtained under a special substrate bias voltage of −160 V at low substrate temperature. Such an enhanced mechanical property can be understood by the role of physisorbed oxygen in the interfacial region, in which less physisorbed oxygen with van der Waals bonds leads to a strong adhesion. Our results provide a favorable strategy to achieve strong adhesion between oxide and sulfide at low temperature, which are urgent in future micro-electric applications. [ABSTRACT FROM AUTHOR]

[Display omitted] • Highly crystalline In 2 O 3 films are grown by pulsed reactive magnetron sputtering. • Substrate heating further improves the film crystallinity and conductivity. • 400 °C is the limit for benefiting to obtain the optimum crystallinity of In 2 O 3 films. • The films deposited at 400 °C yield the lowest resistivity of 1.28 × 10-4 Ω⋅cm. • An average transmittance of greater than 80% are also obtained at 400 °C. A transparent conductive oxide (TCO) should have a combination of high electrical conductivity and optical transmission property to fulfill the challenging demands of industrial applications. So far, doped TCOs have been mostly considered to fulfill the technological challenges. In this study, we demonstrate that indium oxide (In 2 O 3) thin films without intentional doping can be deposited with high crystallinity under specific film growth conditions leading to thin films with high mobility, high electrical conductivity, and high transmittance. In 2 O 3 thin films have been deposited by reactive pulsed direct current magnetron sputtering (pulsed DCMS) from an indium target on substrates in a temperature range from room temperature (RT) to 600 °C. Detailed investigations on In 2 O 3 thin films are performed and the film properties such as crystallinity, microstructure, chemical bonding states, electrical and optical properties are revealed. Enhanced plasma density and ionization degree provided by the employed reactive pulsed DCMS and the intentional substrate heating during the thin film deposition give possibility to deposit highly crystalline thin films which are preferentially oriented in (2 2 2) direction. The substrate heating enhances the crystallinity of the grown films up to a certain optimum temperature: 400 °C. When the substrate temperature is above 400 °C, the carrier concentration and mobility decrease due to the grain refinement effect caused by growth competition of grains in different orientations. The films grown at 400 °C indicate the presence of high oxygen vacancy concentrations, which can directly be associated with a high charge carrier concentration despite the lack of intentional doping. The undoped In 2 O 3 films in this study grown at 400 °C show highly promising and competitive electrical properties such as low resistivity of 1.28 × 10-4 Ω⋅cm and the high carrier mobility of 69 cm2/Vs. The average transmittance of the In 2 O 3 films with the highest conductivity is found to be greater than 80% in the visible to the near-infrared spectral region owing to an enhancement in the carrier mobility and an optical bandgap in the range from 3.61 eV to 3.77 eV. [ABSTRACT FROM AUTHOR]

Molybdenum doped zinc oxide thin films have been prepared by RF magnetron sputtering. The influence of the film thickness (120–500 nm) on the structural, electrical, and optical properties of the films is investigated respectively. X-ray diffraction (XRD) studies reveal that with an increase in the film thickness, the crystallinity of the film improves. The obtained film with thickness of 500 nm exhibits the best electrical properties with the lowest resistivity of around 9.6 × 10 −4 Ω cm. The mobility varied from 7.8 to 14.7 cm 2 V −1 s −1 without reducing the achieved high carrier concentration of ∼4.5 × 10 20 cm −3 . Optical band gaps extracted from transmission spectra shows irregular changes due to the Burstein–Moss shift modulated by many-body effects. [ABSTRACT FROM AUTHOR]

Texture could improve the tribological properties of thin films effectively. The mechanism of surface texture improving tribological performance has been extensively studied. However, the coupling effect of surface texture and interface texture on tribological performances needs to be comprehensively understood. In this work, we fabricated surface/interface textured carbon films. The experimental results proved that the tribological properties of carbon films had a remarkable enhancement after adding surface/interface texture and they were strongly related to the texture parameters. The mechanism of the enhanced performance was discussed based on the promotion of transfer films and the enhancement of film-substrate adhesion strength induced by the surface/interface texture. Finally, a coupling effect of surface/interface texture on the tribological performance was proposed. [Display omitted] • A technique for fabricating controllable surface/interface texture was developed. • Tribological properties were significantly enhanced with optimal texture size. • Coupling effect of surface/interface texture on transfer film and film-substrate adhesion was explored. [ABSTRACT FROM AUTHOR]

• AZO/Ag/AZO multilayer films are prone to failures under thermal oxidation. • Inserting Ni layer can improve the photoelectric stability of AZO/Ag/AZO films. • Film had good transmittance, surface resistance and structure after oxidation at 500 °C. • Ag diffusion was inhibited by Ni layer and photoelectric stability was improved. Dielectric/metal/dielectric-structured transparent conductive films are prone to structural and functional failures under thermal oxidation environment. Herein, a Ni layer was employed to improve the photoelectric stability of AZO/Ag/AZO multilayer films. The AZO/Ni/Ag/AZO film exhibited a transmittance of 75%, surface resistance of ~7 Ω/sq, and stable structure after thermal oxidation treatment at 500 °C. The visible light transmittance, surface resistance, and figure of merit values of the AZO/Ag/AZO and AZO/Ni/Ag/AZO films were determined after high-temperature treatment in ambient air. The diffusion of Ag was effectively inhibited by the Ni layer, and the photoelectric stability of AZO/Ag/AZO films was improved under thermal environment. [ABSTRACT FROM AUTHOR]

• A self-powered vertical heterojunction photodetector based on n-SnOx/p-diamond was fabricated by RF sputtering. • The device has a peak response at 350 nm and responds to light wavelength in the 250–500 nm range at zero bias. • Analysis of the detection mechanism of the n-SnOx/p-diamond heterojunction photodetector. High-performance self-powered UV-blue photodetector was fabricated based on n-SnO x /p-diamond heterojunction. The SnO x film was deposited on the high temperature and high pressure synthetic boron doped diamond wafer by RF magnetron sputtering. This heterojunction device exhibits a good rectification behavior with a rectification ratio of 3.15 × 104 at ±3 V. At zero bias, the device responds in the wavelength ranging from 250 nm to 500 nm with a peak response at 350 nm. The photoresponse rise time and decay time of the device are both less than 2 s under UV-blue illumination with different wavelengths. These results demonstrate that the n-SnO x /p-diamond heterojunction device has potential applications in the field of UV-blue detection. [ABSTRACT FROM AUTHOR]