19 results on '"Hwang, Cheol Seong"'
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2. Atomistic prediction on the composition- and configuration-dependent bandgap of Ga(As,Sb) using cluster expansion and ab initio thermodynamics
3. InterPhon: Ab initio interface phonon calculations within a 3D electronic structure framework
4. Atomic engineering of metastable BeO6 octahedra in a rocksalt framework
5. Atomic layer deposition of Ta-doped SnO2 films with enhanced dopant distribution for thermally stable capacitor electrode applications
6. Theoretical understanding of the catalyst-free growth mechanism of GaAs B nanowires
7. Engineering of AlON interlayer in Al2O3/AlON/In0.53Ga0.47As gate stacks by thermal atomic layer deposition
8. Reducing the nano-scale defect formation of atomic-layer-deposited SrTiO3 films by adjusting the cooling rate of the crystallization annealing of the seed layer
9. Interface sulfur passivation using H2S annealing for atomic-layer-deposited Al2O3 films on an ultrathin-body In0.53Ga0.47As-on-insulator
10. Fabrication of a nano-scaled tri-gate field effect transistor using the step-down patterning and dummy gate processes
11. All-printed triboelectric nanogenerator.
12. Scale-up and optimization of HfO2-ZrO2 solid solution thin films for the electrostatic supercapacitors.
13. Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric HfxZr1−xO2 films.
14. Resistive random access memory based on gallium oxide thin films for self-powered pressure sensor systems.
15. Multi-layer WSe2 field effect transistor with improved carrier-injection contact by using oxygen plasma treatment.
16. Highly selective ZnO gas sensor based on MOSFET having a horizontal floating-gate.
17. Improved interface properties of atomic-layer-deposited HfO2 film on InP using interface sulfur passivation with H2S pre-deposition annealing.
18. Erratum to "Theoretical understanding of the catalyst-free growth mechanism of GaAs "1 1 1"B nanowires" [Appl. Surf. Sci. 496 (2019) 143740].
19. A new sensing mechanism of Si FET-based gas sensor using pre-bias.
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