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Your search keyword '"Mantooth, H. Alan"' showing total 166 results
Start Over Author "Mantooth, H. Alan" Publication Year Range Last 10 years Publisher ieee
166 results on '"Mantooth, H. Alan"'

15. 3.3 kV Low-Inductance Full SiC Power Module

Author

Chen, Yuxiang, primary, Du, Xinyuan, additional, Du, Liyang, additional, Du, Xia, additional, Md Khalid Hasan, Abu Shahir, additional, Li, Xiaoling, additional, Chen, Hao, additional, Paul, Riya, additional, Chinnaiyan, Sudharsan, additional, Zhao, Yue, additional, and Mantooth, H. Alan, additional

Published
2023
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43. Vulnerability of a VOC-Based Inverter Due to Noise Injection and Its Mitigation.

Author

Mazumder, Sourojit K., Greidanus, Mateo D. Roig, Liu, Ji, and Mantooth, H. Alan

Abstract

Even though virtual oscillator control (VOC)-based inverters do not communicate with each other, they need to make local measurements for control. The impact of tampering with these measured or sensed signals on the performance of a VOC-based inverter and synchronization of multiple such inverters is an important but open-ended issue. As such, this letter explores the impact of intentional side-channel noise intrusion (SNI) on the synchronization of VOC-based communication-free self-synchronizing inverters (CFSIs). Two different scenarios are investigated via experimental and analytical studies using a half-bridge neutral point clamped (NPC) single-phase CFSI. They address the impact of SNI on the ability of a CFSI to ensure a stable 60-Hz limit cycle and on the parallel operation of two such CFSIs to ensure synchronism to a common 60-Hz load frequency. [ABSTRACT FROM AUTHOR]

Published
2023
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44. A Suppression Method for Gate-Source Voltage Oscillation With Clamping Function for GaN Devices.

Author

Chen, Jian, Xu, Jianping, Song, Wensheng, Luo, Quanming, and Mantooth, H. Alan

Abstract

Gallium nitride (GaN) devices are generally more prone to severe switching oscillations than Si mosfets due to their fast switching speeds. Different from Si and SiC mosfets, GaN devices typically have a lower maximum gate voltage rating. Taking the Efficient Power Conversion Corporation series as an example, the gate drive voltage is usually 5 V, but the maximum voltage rating is 6 V. Therefore, GaN devices are more susceptible to damage from gate-source voltage oscillation. In this letter, a gate drive circuit with a clamping function is proposed to suppress gate-source voltage oscillation. The adopted method can not only clamp the gate voltage of the GaN device near the drive voltage to protect the device, but also does not affect the switching speed of the device. The proposed method mainly uses some passive components that make the circuit design simpler compared with other active gate driver methods. Finally, the effectiveness of the proposed method is verified by experiments. [ABSTRACT FROM AUTHOR]

Published
2023
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48. A Hybrid Model Predictive Control With Integrated Phase-Disposition and Phase-Shifted PWM for an Inner-Interleaved Hybrid Multilevel Converter.

Author

Li, Yufei, Diao, Fei, Zhao, Yue, and Mantooth, H. Alan

Subjects
PREDICTION models, PULSE width modulation transformers, VECTOR spaces, PULSE width modulation, SILICON carbide, HARMONIC suppression filters
Abstract

This article puts forward a hybrid model predictive control (H-MPC) for an inner-interleaved hybrid multilevel converter (IHMC). The sign patterns of the original and shifted reference vectors in the original and virtual space vector diagrams (VSVDs) are used, respectively, to realize the phase-disposition pulsewidth modulation (PWM) and determine the low-frequency switching states. Then, the three adjacent vectors are selected in the second-layer VSVD and the optimal current tracking is safeguarded by the duty cycle optimization of the three adjacent vectors. Finally, through applying the phase-shifted PWM to the two interleaved legs, a constant and doubled equivalent switching frequency can be achieved, which further paves the way for dc-link and floating capacitor voltages balancing and circulating current mitigation with the use of the straightforward duty cycle adjustments. The proposed H-MPC enables the decoupling of the low- and high-frequency stages in the IHMC and also reduces both output current ripples and computational burden while achieving a constant switching frequency simultaneously. Comprehensive simulation and experimental studies on an all silicon carbide prototype verify the effectiveness of the proposed control strategy. [ABSTRACT FROM AUTHOR]

Published
2022
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