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Your search keyword '"Brault, Julien"' showing total 3 results
Start Over Author "Brault, Julien" Publication Year Range Last 10 years Publisher iop publishing
3 results on '"Brault, Julien"'

1. Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

Author

Thi Huong, Ngo, primary, Comyn, Rémi, additional, Chenot, Sébastien, additional, Brault, Julien, additional, Damilano, Benjamin, additional, Vézian, Stéphane, additional, Frayssinet, Eric, additional, Cozette, Flavien, additional, Rodriguez, Christophe, additional, Defrance, Nicolas, additional, Lecourt, François, additional, Labat, Nathalie, additional, Maher, Hassan, additional, and Cordier, Yvon, additional

Published
2020
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2. Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors.

Author

Huong, Ngo Thi, Comyn, Rémi, Chenot, Sébastien, Brault, Julien, Damilano, Benjamin, Vézian, Stéphane, Frayssinet, Eric, Cozette, Flavien, Rodriguez, Christophe, Defrance, Nicolas, Lecourt, François, Labat, Nathalie, Maher, Hassan, and Cordier, Yvon

Subjects
GALLIUM nitride, ALUMINUM gallium nitride, MODULATION-doped field-effect transistors, ETCHING techniques
Abstract

In this paper, we report on the fabrication of a normally-off Al(Ga)N/GaN high electron mobility transistor with selective area sublimation under vacuum of the p type doped GaN cap layer. This soft method makes it possible to avoid damages otherwise induced by post processing with reactive ion etching techniques. The GaN evaporation selectivity is demonstrated on AlN as well as on AlGaN barrier layers. Furthermore, by properly choosing the AlGaN barrier thickness and composition it is possible to co-integrate a normally-off with a normally-on device on the same substrate. Finally, a local area regrowth of AlGaN can complement this process to increase the maximum drain current in the transistors. [ABSTRACT FROM AUTHOR]

Published
2021
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3. Investigation of AlyGa1− yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters

Author

Brault, Julien, primary, Matta, Samuel, additional, Ngo, Thi-Huong, additional, Korytov, Maxim, additional, Rosales, Daniel, additional, Damilano, Benjamin, additional, Leroux, Mathieu, additional, Vennéguès, Philippe, additional, Al Khalfioui, Mohamed, additional, Courville, Aimeric, additional, Tottereau, Olivier, additional, Massies, Jean, additional, and Gil, Bernard, additional

Published
2016
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