35 results on '"Hirayama, Hideki"'
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2. Nonrelevant quantum levels limited laser dynamic in narrow-period terahertz quantum cascade lasers
3. Step-flow growth of Al droplet free AlN epilayers grown by plasma assisted molecular beam epitaxy
4. Surface-emitting photonic crystal terahertz quantum cascade laser adopting uniform triangular prism photonic crystal with a double-metal waveguide
5. Limitation of parasitic absorption in designs of three-state terahertz quantum cascade lasers with direct-phonon injection
6. Evaluation of internal quantum efficiency and stimulated emission characteristics in AlGaN-based multiple quantum wells
7. Engineering of electron–longitudinal optical phonon coupling strength in m-plane GaN terahertz quantum cascade lasers
8. Plasma assisted molecular beam epitaxy growth mechanism of AlGaN epilayers and strain relaxation on AlN templates
9. Corrigendum: Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (2021 Nanotechnology 32 055702)
10. Erratum: “Improved external quantum efficiency of 293 nm AlGaN UVB LED grown on an AlN template” [Jpn. J. Appl. Phys. 58, SAAF01 (2019)]
11. Suppressing the efficiency droop in AlGaN-based UVB LEDs
12. Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters
13. The 2020 UV emitter roadmap
14. Research status and prospects of deep ultraviolet devices
15. Overcoming the current injection issue in the 310 nm band AlGaN UVB light-emitting diode
16. Random electric field induced by interface roughness in GaN/AlxGa1−xN multiple quantum wells
17. Parasitic transport paths in two-well scattering-assisted terahertz quantum cascade lasers
18. Nonradiative recombination centers in deep UV-wavelength AlGaN quantum wells detected by below-gap excitation light
19. Influence of the nucleation conditions on the quality of AlN layers with high-temperature annealing and regrowth processes
20. Controlled crystal orientations of semipolar AlN grown on an m-plane sapphire by MOCVD
21. Evolution of morphology and crystalline quality of DC-sputtered AlN films with high-temperature annealing
22. Milliwatt power UV-A LEDs developed by using n-AlGaN superlattice buffer layers grown on AlN templates
23. Improved external quantum efficiency of 293 nm AlGaN UVB LED grown on an AlN template
24. Optimization of terahertz quantum cascade lasers by suppressing carrier leakage channel via high-energy state
25. Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters.
26. Overcoming the current injection issue in the 310 nm band AlGaN UVB light-emitting diode.
27. Controlling loss of waveguides for potential GaN terahertz quantum cascade lasers by tuning the plasma frequency of doped layers
28. Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes
29. High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer
30. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency
31. Enhanced light extraction in 260 nm light-emitting diode with a highly transparent p-AlGaN layer
32. Growth of non-polar a-plane AlN on r-plane sapphire
33. Analysis of efficiency droop in 280-nm AlGaN multiple-quantum-well light-emitting diodes based on carrier rate equation
34. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
35. Corrigendum: Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (2021 Nanotechnology32 055702).
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