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For metal halide perovskite (MHP)‐based light‐emitting diodes (PeLEDs), effective radiative recombination of the injected holes and electrons within the MHP layer and minimized injection energy barriers at the interfaces between MHP emission layer and charge injection layers are prerequisites for high‐performance and stable PeLEDs. Herein, for the first time, novel p‐type carbon quantum dots (CQDs) are introduced as a hole injection layer in PeLEDs to replace acidic poly(3,4‐ethylenedioxythiophene):poly styrene sulfonate (PEDOT:PSS) layer. The CQDs demonstrate high hole transport mobility and desirable hole injection energy level. Moreover, the carboxyl, amine, and hydroxyl groups on CQDs not only offer a hydrophilic surface for high‐quality perovskite layer growth, but also passivate the perovskite surface defects to suppress the interfacial exciton quenching. Based on the multifunctional p‐type CQDs, high‐performance green CsPbBr3 PeLEDs with a low turn‐on voltage of only 2.8 V, maximum luminance of 25 770 cd m−2, and maximum external quantum efficiency (EQE) of 13.8% are achieved. The PeLEDs also show good operational stability and long‐term environmental stability. The first application of CQDs as a hole injection layer in PeLEDs breaks through the traditional cognition of carbon materials and opens up new pathways for the developments of carbon nanomaterials in optoelectronic devices. [ABSTRACT FROM AUTHOR]

The balance of hole–electron injection is always a vital factor for the luminance, efficiency and working lifetime of quantum‐dot light‐emitting diodes (QLEDs), especially blue QLEDs. However, currently most approaches proposed to solve this issue involve tedious optimization of device architecture or material composition. Here, high‐performance blue QLEDs are reported based on CdZnS/ZnS quantum‐dot (QDs) by utilizing ZnO nanoparticles (NPs) and Al:Al2O3 as electron‐transporting layer (ETL) and cathode materials, respectively. The effect of post‐annealing temperature on the trap state density in ZnO NPs and the related mechanisms are investigated through optical and photoelectron spectroscopies. The method of controlling ZnO NPs annealing temperature leads to controllable electron‐mobility of ETL, which ultimately optimizes the balance of charge injection. Together with partially oxidized Al cathode (Al:Al2O3), high‐performance blue QLEDs are fabricated with luminance and external quantum efficiency (EQE) up to 27 753 cd m−2 and 8.92%. As far as is known, the peak luminance achieved is the record of deep blue QLEDs. This simple method for regulating charge injection balance via annealing temperature requires no modification of device architecture, making it applicable for a variety of QLEDs structures. High‐performance blue QLEDs are fabricated based on a ZnO nanoparticle (NP) electron‐transporting layer and a Al:Al2O3 cathode. The electron mobility in ZnO NP films can be regulated for better electron–hole balance by controlling the annealing temperature, thereby ensuring excellent luminance and recombination efficiency. This simple way to adjust charge injection balance requires no additional modification of the device architecture. [ABSTRACT FROM AUTHOR]

Quasi‐two‐dimensional (quasi‐2D) perovskites are attracting much attention due to their impressive luminescence properties. However, the introduction of insulating bulky cations reduces the charge transport property of mixed‐dimensional perovskites and leads to lowered brightness and increased turn‐on voltage. The trade‐off between high photoluminescence quantum yield (PLQY) and electrical conductivity should be well manipulated to obtain high‐performance perovskite light‐emitting diodes (PeLEDs). Herein, quasi‐2D perovskite BA2(CsPbBr3)n‐1PbBr4‐PEO with high PLQY and excellent carrier injection efficiency is demonstrated by incorporating bulky n‐butylammonium bromide (BABr), CsPbBr3, and polyethylene oxide (PEO). BA can intercalate into the three‐dimensional perovskite framework to form a layered (quasi‐2D) perovskite structure. The ion conductive polymer PEO is used to protect quasi‐2D perovskite crystals. Additional BABr is removed by using anhydrous isopropyl alcohol as a washing agent due to its selective dissolubility. By carefully modulating the optical and electrical properties of quasi‐2D perovskite films, the maximum luminance of PeLEDs is dramatically enhanced from 191 to 33533 cd m−2, which is the brightest green quasi‐2D PeLED reported thus far, leading to an increase in external quantum efficiency from 1.81% to 8.42%. This work provides a promising route to control the optical and electrical properties of quasi‐2D perovskite films for high‐performance optoelectronic devices. A quasi‐2D perovskite with high photoluminescence quantum yield and excellent carrier injection efficiency is demonstrated by incorporating n‐butylammonium bromide, CsPbBr3 and polyethylene oxide. By modulating the optical and electrical properties of quasi‐2D perovskite films, the maximum luminance of PeLEDs is dramatically enhanced from 191 to 33 533 cd m−2, which is the brightest value yet observed for green quasi‐2D PeLEDs. [ABSTRACT FROM AUTHOR]