Search

This letter proposes an indirect power dissipation level short circuit protection (IPDL-SCP) method for silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (mosfets). Due to differences between normal conducting and short-circuit (SC) conditions, this method is triggered by the voltage oscillation vss at the parasitic inductance (Lss) of the source and directly monitoring vds of SiC mosfet. For verification, the short circuit protection circuit is tested and proved functional on the SC test bench. Experimental results show that the protection circuit can respond to both hard switching fault (HSF) and fault under load (FUL), while the fastest response delays are 75 ns for HSF and 170 ns for FUL. Comparisons with other commonly used SC protection methods have also been made, which show that the proposed IPDL-SCP method has better performance in shorter protection delays. [ABSTRACT FROM AUTHOR]

Gate-oxide degradation has been one of the critical reliability concerns of silicon carbide (SiC) metal–oxide–semiconductor-field-effect transistors (mosfets), which could be monitored through aging-sensitive parameters. In this article, an online gate-oxide degradation monitoring method for planar SiC mosfets is proposed by extracting gate charge time at a specific range of gate voltage. It is based on the findings that the input capacitances of planar SiC mosfets change significantly over gate-oxide degradation, which is theoretically analyzed and experimentally verified. The capacitance variations are converted into the gate charge time as the new aging-sensitive parameter. The new parameter measurement circuit is proposed and integrated into the gate driver module. The article results indicate that the new parameter varies noticeably with gate-oxide degradation and the difference of this parameter caused by junction temperature is much smaller than that caused by degradation. Besides, the parameter is immune to package degradation and load current. The condition monitoring method can be implemented online since the parameter is extracted during the off-state of SiC mosfet devices, which does not affect normal operation. The confirmatory experiment is carried out to verify the correctness of the proposed method. [ABSTRACT FROM AUTHOR]

Monitoring the defective multichip insulated gate bipolar transistor (IGBT) module is a cost-effective approach to improve the quality of customer service. A method using time duration of the gate charge is proposed to monitor bond wires fatigue of the multichip IGBT modules when the modules are in the off-state. It is based on the fact that failure of the chip branch due to bond wires fatigue changes the gate input capacitance of the multichip IGBT module. The health state of bond wires can be converted into the change of time duration of gate charge under the constant gate current. A driver containing the constant current source is proposed. The study results indicate that the time duration of the gate charge decreases significantly when the failure of the chip branch occurs, and the effect of junction temperature can be ignored within the special range of gate voltage. Condition monitoring can be implemented during the off-state of the multichip module and without considering the effects of junction temperature. The confirmatory experiment is carried out to verify the correctness of the proposed method. [ABSTRACT FROM AUTHOR]

In this paper, we propose to monitor the thermal parameters of insulated gate bipolar transistor (IGBT) module using the case temperature. This method works during the shutoff period of IGBT module where the case temperature is in the cooling phase By establishing the relationship between the Cauer-type thermal RC parameters and the time constants of case temperature cooling curves, thermal parameters of the IGBT module can be identified. The proposed method is able to eliminate the influence of thermal interface material (TIM) degradation on the monitored results, which is quite challenging for the current case temperature monitoring methods. Moreover, it enables the detection of thermal resistance and thermal capacitance of the TIM and that of the IGBT module at the same time. Experimental tests are performed to validate the accuracy and feasibility of the proposed method. Moreover, impacts of the junction temperature, case temperature sensing position, and thermal coupling on the monitored results are analyzed. [ABSTRACT FROM AUTHOR]