Search

The formation mechanism of Cd–S–Se quantum dots (QDs) with a CdS/CdSe core–shell structure within a silicate glass system was investigated by monitoring the change in the first excitonic absorption peak of CdSe, CdS, and Cd–S–Se QDs as a function of the heat‐treatment (HT) duration. When a silicate glass containing QD formation components for CdSe or CdS single‐phased QDs was heat‐treated, CdSe QDs grew via Ostwald ripening, whereas CdS QDs hardly formed within the given silicate glass matrix. When the glass, including CdO, ZnSe, and ZnS, was utilized for the synthesis of Cd–S–Se QDs within the glass matrix, Cd–S–Se QDs were successfully formed and exhibited similar growth behavior to CdSe QDs during the initial stage of HT. The structural changes in the QD‐embedded glasses during HT were also monitored by Raman spectroscopy and discussed, and a possible formation mechanism of CdSe/CdS core–shell‐structured QDs within silicate glasses is suggested. [ABSTRACT FROM AUTHOR]

Photoluminescence (PL) properties of PbSe and Sr2+‐doped PbSe quantum dots (QDs) doped in silicate glasses were investigated by changing the excited laser wavelength and intensity. When BaO was replaced by SrO, the Sr2+‐doped PbSe QDs formed and showed large blue‐shifts in both absorption and PL bands compared to the PbSe QDs. It is attributed to the increasing in band gap resulted by the incorporation of Sr2+ ions into PbSe QDs. These two kinds of QDs were excited by the laser with the wavelengths of 1319 and 1532 nm. When rising the pumping intensity up to 1000 mW, the PL intensity from Sr2+‐doped PbSe QDs monotonically increased, while, the PL intensity from PbSe QDs reached maximum at pumping intensity at ~200 mW (λex = 1319 nm) and ~300 mW (λex = 1532 nm). The good resistance to photodarkening of Sr2+‐doped PbSe QDs is indicated passivation effect on the surface defects from Sr2+ ions doping. For Sr2+‐doped PbSe QDs the anti‐Stokes photoluminescence (ASPL) were observed when using both 1319 and 1532 nm excitation. The integrated intensity of the ASPL is linear with the excitation intensity, which indicates that the ASPL belongs to the phonon‐assisted one‐photon process. And the ASPL intensity as a function of excitation intensity shows a size dependence of the QDs. [ABSTRACT FROM AUTHOR]

Se2− color centers and CdSe/Cd1−xZnxSe quantum dots (QDs) were formed in silicate glasses, respectively, by carefully adjusting the content of Al2O3. The absorption coefficient and broad visible emission at 400‐700 nm of Se2− color centers increased firstly and then decreased upon increasing concentration of Al2O3 from 0 to 5 mol. %. With 2 mol. % Al2O3 adding, the band edge emission centered at 497 nm from CdSe QDs in glasses was observed after heat treatment. Raman spectra and TEM characterization confirmed the formation of CdSe/Cd1−xZnxSe QDs. The small amount addition of Al2O3 had a significant effect on the formation of Se2− color centers and precipitation of CdSe/Cd1−xZnxSe QDs in glasses due to its complicated effect on the network structure and optical basicity of the glasses. [ABSTRACT FROM AUTHOR]

Abstract: In order to alleviate the effect of the surface defects on the emission properties of quantum dots, copper ions‐doped ZnSe quantum dots (QDs) in the glasses are prepared using melt‐quenching and subsequent thermal annealing methods. For glasses without copper doping, tunable band‐edge emission from ZnSe QDs is achieved. For glasses with copper doping, efficient energy transfer from ZnSe QDs to copper ions is observed, and efficient broad band emission from copper ions is realized at the expense of the band‐edge emission of ZnSe QDs. Absorption spectra, size‐dependent broad‐band emission spectra and electron spin resonance spectra show the cupric ions are doped into the ZnSe QDs. Results reported here shows that doping of transition‐metal ions into semiconductor QDs in glasses is promising for development of high efficient luminescent glasses. [ABSTRACT FROM AUTHOR]