Search

Series–series (SS) and series–parallel (SP) topologies are widely used in resonant inductive coupling wireless power transfer systems for various applications. However, the selection of an appropriate topology to achieve higher output power or higher efficiency is typically difficult because design optimization of the circuit parameters (e.g., characteristic impedance, load resistance, and mutual inductance) for each topology is generally separately discussed using different equivalent circuits with multiple resonance modes. Therefore, the purpose of this study involves proposing a simple strategy to select an appropriate topology. The proposed strategy is based on quasi-duality between the SS and SP topologies that are elucidated from the novel equivalent circuits derived using Lagrangian dynamics. Based on the quasi-duality, the output power and efficiency of the SP topology are calculated via the equivalent circuit of SS topology. Thus, the quasi-duality offers a simple comparison between the SS and SP topologies. The proposed strategy selects an appropriate topology by comparing only the equivalent ac load resistance, which is the ac resistance including the rectifying circuit and the load resistance, the characteristic impedance, and the ac load resistance that achieves the maximum efficiency or maximum output power of the SS topology. Experiments verify the appropriateness and effectiveness of the proposed strategy. [ABSTRACT FROM AUTHOR]

Wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are promising materials for next-generation power devices. We have fabricated a normally on GaN-based high-electron-mobility transistor (GaN HEMT) for power electronic converters. In this paper, the current collapse phenomena, which are distinctive characteristics of GaN devices, are evaluated in detail for several voltages with two switching frequencies. We also evaluate a gate drive circuit that we previously proposed for the normally on GaN HEMT with a single positive voltage source. We construct and test prototype circuits for a boost-type dc–dc converter and a single-phase full-bridge inverter with a gate drive circuit. The problems to be solved for the normally on GaN HEMT, which has a (static) voltage rating of over 600 V, are clarified on the basis of the experimental results. [ABSTRACT FROM AUTHOR]

Litz wire has been widely utilized in power transformers and inductors as a wire with low copper loss at high-frequency operation. The Litz wire is commonly made of many thin isolated strands twisted in multiple levels. Due to its complicated structure, the copper loss prediction of the Litz wire has been difficult, hindering the design optimization of the Litz wire structure. To overcome this difficulty, preceding studies have investigated the analytical copper loss models of the constituting elements of the Litz wire, i.e., the strands and the bundles of strands. The purpose of this article is to propose an analytical copper loss model of the Litz wire by utilizing these preceding knowledge. The proposed model is formulated only with parameters that can be measured by basic testing instruments. Besides, the proposed model considers the bundle structure of the Litz wire, which affects the local ac current distribution, and the twisting pitch, which causes the inclination of the Litz wire strands. The proposed model was tested by comparing the analytical prediction and experimental measurements of the ac resistance of commercially available Litz wires. As a result, the predicted ac resistance showed good agreement with the measured ac resistance, suggesting the appropriateness of the proposed model. [ABSTRACT FROM AUTHOR]