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For unipolar hydrodynamic model of semiconductor device represented by Euler-Poisson equations, when the doping profile is supersonic, and the boundary data are in subsonic region and supersonic region separately, the system possesses the shock transonic steady-states and the smooth transonic steady-states. In this paper we study the nonlinear structural stability and the linear dynamic instability of these steady transonic solutions. For any relaxation time: 0 < τ ≤ + ∞ , by means of elaborate singularity analysis, we first investigate the structural stability of the C 1 -smooth transonic steady-states, once the perturbations of the initial data and the doping profiles are small enough. We note that, when the C 1 -smooth transonic steady-states pass through the sonic line, they produce singularities for the system, and cause some essential difficulty in the proof of structural stability. Moreover, when the relaxation time is large enough τ ≫ 1 , under the condition that the electric field is positive at the shock location, we prove that the transonic shock steady-states are structurally stable with respect to small perturbations of the supersonic doping profile. Furthermore, we show the linearly dynamic instability for these transonic shock steady-states provided that the electric field is suitable negative. The proofs for the structural stability results are based on singularity analysis, a monotonicity argument on the shock position and the downstream density, and the stability analysis of supersonic and subsonic solutions. The linear dynamic instability of the steady transonic shock for Euler-Poisson equations can be transformed to the ill-posedness of a free boundary problem for the Klein-Gordon equation. By using a nontrivial transformation and the shooting method, we prove that the linearized problem has a transonic shock solution with exponential growths. These results enrich and develop the existing studies. [ABSTRACT FROM AUTHOR]

This paper concerns the stationary subsonic or sonic–subsonic solution of the electric potential driven problem to the isentropic hydrodynamic model for semiconductors. We give a necessary and sufficient condition to ensure the existence of this kind of solution. Specifically, there exists a subsonic or sonic–subsonic solution to this problem if and only if 0 ≤ ϕ r ≤ ϕ ̄ , with the number ϕ ̄ = O 1 τ . Here, ϕ r is the right side electric potential and τ is the relaxation time. Moreover, there is a number ϕ ̃ ∈ (0 , ϕ ̄ ] such that when ϕ r = ϕ ̃ , there exists a sonic–subsonic solution. In this way, we show the influence of the relationship between the boundary value of the electric potential and the semiconductor effect on the existence of this kind of solution. Finally, we prove the uniqueness of subsonic solution by the energy method under the assumption that ϕ r and ϕ r τ are both small enough. [ABSTRACT FROM AUTHOR]

In this paper, we study the well-posedness, ill-posedness and uniqueness of the stationary 3-D radial solution to the bipolar isothermal hydrodynamic model for semiconductors. The density of electron is imposed with sonic boundary and interiorly subsonic case and the density of hole is fully subsonic case. It is difficult to estimate the upper and lower bounds of the holes due to the coupling of electrons and holes and the degeneracy of electrons at the boundary. Thus, we use the topological degree method to prove the well-posedness of solution. We prove the ill-posedness of subsonic solution under some conditions by direct mathematical analysis and contradiction method. The ill-posedness property shows significant difference to the unipolar model. Another highlight of this paper is the application of specific energy method to obtain the uniqueness of solution in two cases. One case is the relaxation time τ = ∞ , namely, the pure Euler-Poisson case; the other case is j τ ≪ 1 , which means that, when the current flow is sufficiently small and the relaxation time is sufficiently large both can satisfy. [ABSTRACT FROM AUTHOR]

As shown in [17,18] , for the hydrodynamic model of semiconductors represented by Euler-Poisson equations with sonic boundary and subsonic/supersonic doping profile, the structure of stationary solutions are very complicated. It may possess various solutions like subsonic/supersonic/transonic flows. In this paper, we consider a more challenging case where the doping profile is transonic, which is categorized into two types: subsonic-dominated and supersonic-dominated. In the subsonic-dominated case, we show that the system has a unique interior subsonic solution, at least one interior supersonic solution and infinitely many transonic solutions under the suitable assumptions. However, the difference with the case of subsonic doping profile is that the interior subsonic solution and interior supersonic solution may not exist in special cases when the relaxation time is small. In the supersonic-dominated case, the non-existence and existence of all types of solutions are also obtained. The approach adopted is the technical compactness analysis combining the Green's function method. Here, the results obtained perfectly develop the existing studies. [ABSTRACT FROM AUTHOR]