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Monolithic integration of novel materials for unprecedented device functions without modifying the existing photonic component library is the key to advancing heterogeneous silicon photonic integrated circuits. To achieve this, the introduction of a silicon nitride etching stop layer at selective area, coupled with low-loss oxide trench to waveguide surface, enables the incorporation of various functional materials without disrupting the reliability of foundry-verified devices. As an illustration, two distinct chalcogenide phase change materials (PCM) with remarkable nonvolatile modulation capabilities, namely Sb2Se3 and Ge2Sb2Se4Te1, were monolithic back-end-of-line integrated into silicon photonics. The PCM enables compact phase and intensity tuning units with zero-static power consumption. Taking advantage of these building blocks, the phase error of a push-pull Mach-Zehnder interferometer optical switch could be trimmed by a nonvolatile phase shifter with a 48% peak power consumption reduction. Mirco-ring filters with a rejection ratio >25dB could be applied for >5-bit wavelength selective intensity modulation, and waveguide-based >7-bit intensity-modulation photonic attenuators could achieve >39dB broadband attenuation. The advanced "Zero change" back-end-of-line integration platform could not only facilitate the integration of PCMs for integrated reconfigurable photonics but also open up the possibilities for integrating other excellent optoelectronic materials in the future silicon photonic process design kits., Comment: 20 pages, 4 figures, submitted to Nature Photonics

Optical neural networks (ONNs) herald a new era in information and communication technologies and have implemented various intelligent applications. In an ONN, the activation function (AF) is a crucial component determining the network performances and on-chip AF devices are still in development. Here, we first demonstrate on-chip reconfigurable AF devices with phase activation fulfilled by dual-functional graphene/silicon (Gra/Si) heterojunctions. With optical modulation and detection in one device, time delays are shorter, energy consumption is lower, reconfigurability is higher and the device footprint is smaller than other on-chip AF strategies. The experimental modulation voltage (power) of our Gra/Si heterojunction achieves as low as 1 V (0.5 mW), superior to many pure silicon counterparts. In the photodetection aspect, a high responsivity of over 200 mA/W is realized. Special nonlinear functions generated are fed into a complex-valued ONN to challenge handwritten letters and image recognition tasks, showing improved accuracy and potential of high-efficient, all-component-integration on-chip ONN. Our results offer new insights for on-chip ONN devices and pave the way to high-performance integrated optoelectronic computing circuits.

Optical phase change materials (O-PCMs), a unique group of materials featuring drastic optical property contrast upon solid-state phase transition, have found widespread adoption in photonic switches and routers, reconfigurable meta-optics, reflective display, and optical neuromorphic computers. Current phase change materials, such as Ge-Sb-Te (GST), exhibit large contrast of both refractive index (delta n) and optical loss (delta k), simultaneously. The coupling of both optical properties fundamentally limits the function and performance of many potential applications. In this article, we introduce a new class of O-PCMs, Ge-Sb-Se-Te (GSST) which breaks this traditional coupling, as demonstrated with an optical figure of merit improvement of more than two orders of magnitude. The first-principle computationally optimized alloy, Ge2Sb2Se4Te1, combines broadband low optical loss (1-18.5 micron), large optical contrast (delta n = 2.0), and significantly improved glass forming ability, enabling an entirely new field of infrared and thermal photonic devices. We further leverage the material to demonstrate nonvolatile integrated optical switches with record low loss and large contrast ratio, as well as an electrically addressed, microsecond switched pixel level spatial light modulator, thereby validating its promise as a platform material for scalable nonvolatile photonics., Comment: 16 pages, 6 figures

Predicating macroscopic influences of drugs on human body, like efficacy and toxicity, is a central problem of small-molecule based drug discovery. Molecules can be represented as an undirected graph, and we can utilize graph convolution networks to predication molecular properties. However, graph convolutional networks and other graph neural networks all focus on learning node-level representation rather than graph-level representation. Previous works simply sum all feature vectors for all nodes in the graph to obtain the graph feature vector for drug predication. In this paper, we introduce a dummy super node that is connected with all nodes in the graph by a directed edge as the representation of the graph and modify the graph operation to help the dummy super node learn graph-level feature. Thus, we can handle graph-level classification and regression in the same way as node-level classification and regression. In addition, we apply focal loss to address class imbalance in drug datasets. The experiments on MoleculeNet show that our method can effectively improve the performance of molecular properties predication., Comment: arXiv admin note: text overlap with arXiv:1703.00564, arXiv:1611.03199 by other authors

Recently, learning equivariant representations has attracted considerable research attention. Dieleman et al. introduce four operations which can be inserted into convolutional neural network to learn deep representations equivariant to rotation. However, feature maps should be copied and rotated four times in each layer in their approach, which causes much running time and memory overhead. In order to address this problem, we propose Deep Rotation Equivariant Network consisting of cycle layers, isotonic layers and decycle layers. Our proposed layers apply rotation transformation on filters rather than feature maps, achieving a speed up of more than 2 times with even less memory overhead. We evaluate DRENs on Rotated MNIST and CIFAR-10 datasets and demonstrate that it can improve the performance of state-of-the-art architectures.

Two-dimensional (2-D) materials are of tremendous interest to integrated photonics given their singular optical characteristics spanning light emission, modulation, saturable absorption, and nonlinear optics. To harness their optical properties, these atomically thin materials are usually attached onto prefabricated devices via a transfer process. In this paper, we present a new route for 2-D material integration with planar photonics. Central to this approach is the use of chalcogenide glass, a multifunctional material which can be directly deposited and patterned on a wide variety of 2-D materials and can simultaneously function as the light guiding medium, a gate dielectric, and a passivation layer for 2-D materials. Besides claiming improved fabrication yield and throughput compared to the traditional transfer process, our technique also enables unconventional multilayer device geometries optimally designed for enhancing light-matter interactions in the 2-D layers. Capitalizing on this facile integration method, we demonstrate a series of high-performance glass-on-graphene devices including ultra-broadband on-chip polarizers, energy-efficient thermo-optic switches, as well as graphene-based mid-infrared (mid-IR) waveguide-integrated photodetectors and modulators.