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We demonstrate a non-monotonic evolution of thermal conductivity of large-area hexagonal boron nitride films with thickness. Wrinkles and defects/impurities are present in these films. Raman spectroscopy, an optothermal non-contact technique, is employed to probe the temperature and laser power dependence property of the Raman active E2ghigh phonon mode, which in turn is used to estimate the rise in the temperature of the films under different laser powers. As the conventional Fourier law of heat diffusion cannot be directly employed analytically to evaluate the thermal conductivity of these films with defects and wrinkles, finite element modeling is used instead. In the model, average heat resistance is used to incorporate an overall defect structure, and Voronoi cells with contact resistance at the cell boundaries are constructed to mimic the wrinkled domains. The effective thermal conductivity is estimated to be 87, 55, and 117 W/m.K for the 2, 10, and 30 nm-thick films, respectively. We also present a quantitative estimation of the thermal resistance by defects and wrinkles individually to the heat flow. Our study reveals that the defects/impurities render a much higher resistance to heat transfer in the films than wrinkles., Comment: 24 pages, 8 figures, minor changes

We study the iron-pnictide compound BaFe$_2$(As$_{1-x}$P$_x$)$_2$ for x $\sim$0.23, with a doping concentration near quantum criticality and enhanced nematic fluctuating state in the doping-temperature phase diagram. Transport measurements confirm the presence of a magneto-structural transition at 60K from the tetragonal to the orthorhombic phase, followed by a superconducting transition below 16K. The temperature and polarisation dependent Raman spectra reveal that there is a phonon mode at 211 cm$^{-1}$, followed by two broad modes (BM) between 400 and 700 cm$^{-1}$, having an energy difference of 15 meV, in the temperature range between 300K and 80K. In the non-superconducting state, the phonon mode exhibits expected polarization dependence as well as temperature evolution due to anharmonicity, strong anisotropic and thermally inert behaviour are observed for the BM. Electronic structure calculations for doped and undoped BaFe$_2$As$_2$ show that while Fe $d_{xz}$ and $d_{yz}$ orbitals do not split in the tetragonal phase, the splitting energy is 13.5 meV in the orthorhombic phase of the doped system, which is reasonably close to the experimentally observed value of the energy separation of the BM. We believe that reported BM possibly are the signature of electronic Raman scattering involving the crystal field levels of $d$-orbitals of Fe$^{2+}$ due to local breaking of the C$_4$ symmetry of the parent compound in the doped system.

Usually, in mechanics, we obtain the trajectory of a particle in a given force field by solving Newton's second law with chosen initial conditions. In contrast, through our work here, we first demonstrate how one may analyse the behaviour of a suitably defined family of trajectories of a given mechanical system. Such an approach leads us to develop a mechanics analog following the well-known Raychaudhuri equation largely studied in Riemannian geometry and general relativity. The idea of geodesic focusing, which is more familiar to a relativist, appears to be analogous to the meeting of trajectories of a mechanical system within a finite time. Applying our general results to the case of simple pendula, we obtain relevant quantitative consequences. Thereafter, we set up and perform a straightforward experiment based on a system with two pendula. The experimental results on this system are found to tally well with our proposed theoretical model. In summary, the simple theory, as well as the related experiment, provides us with a way to understand the essence of a fairly involved concept in advanced physics from an elementary standpoint., Comment: 21 pages, 9 figures, to appear in Resonance, Journal of Science Education (Indian Academy of Sciences)

We have used information theory analogue of entropy, Shannon entropy, for estimating the variations during the isotropic and anisotropic AuNP fractal growth process. We have firstly applied the Shannon entropy on the simulated fractal aggregates obtained from DLA model with noise reduction scheme. In conventional noise reduction scheme used in past, the growth process of identical particles was performed and no effect of the evolving cluster on the incoming particle was considered, hence the noise is reduced in discrete amount and do not account for the noise fluctuations present during the morphological evolution of the fractals. The Shannon entropy is shown to capture the emergence of the anisotropic morphological evolution. The imaging tool was further found to be promising for capturing the readjustment effects during cluster-cluster aggregation., Comment: 30 pages

We report a detailed ab initio study of two superlattice heterostructures, one component of which is a unit cell of CuPt ordered InSb_(0.5)As_(0.5). This alloy part of the heterostructures is a topological semimetal. The other component of each system is a semiconductor, zincblende-InSb, and wurtzite-InAs. Both heterostructures are semiconductors. Our theoretical analysis predicts that the variation in the thickness of the InSb layer in InSb/InSb_(0.5)As_(0.5) heterostructure renders altered band gaps with different characteristics (i.e. direct or indirect). The study holds promise for fabricating heterostructures, in which the modulation of the thickness of the layers changes the number of carrier pockets in these systems., Comment: Title changed, this is a replacement and major revision of arXiv:1801.03392

In this article, we report negative thermal expansion and spin frustration in hexagonal GdInO$_{3}$. Rietveld refinement of the XRD patterns reveal that the negative thermal expansion in the temperature range of 50-100K stems from the triangular lattice of Gd$^{3+}$ ions. At low temperature, the downward deviation of the inverse susceptibility ($\chi^{-1}$) vs. $T$ plot from the Curie-Weiss law indicates spin frustration which inhibits long-range magnetic ordering down to 2K. Magnetostriction measurements clearly demonstrate a strong spin-lattice coupling. Low temperature anomalous phonon softening, as obtained from temperature dependent Raman measurements, also reveals the same. Our experimental observations are supported by first principles density functional theory calculations of the electronic and phonon dispersion of GdInO$_3$. The calculations suggest that the GdInO$_3$ lattice is highly frustrated at low temperature. Further, the calculated normal mode frequencies of the Gd related $\Gamma$ point phonons are found to depend on the magnetic structure of the lattice, suggesting significant magneto-elastic coupling., Comment: 16 pages, 10 figures

We report the graded electronic band gap along the axis of individual heterostructured WZ-ZB InAs/InSb0.12As0.88 nanowires. Resonance Raman imaging has been exploited to map the axial variation in the second excitation gap energy (E1) at the high symmetry point (L point) of the Brillouin zone. We relate the origin of the observed evolution of the gap energy to the fine tuning of the alloy composition from the tip towards the interface of the nanowire. The electronic band structures of InAs, InSb and InSbxAs1-x alloy systems at x=0.125, 0.25, 0.50, 0.75 and 0.875, using all electron density functional theory code Wien2k, are reported. The measured band gap along the axis of the InAs/InSb0.12As0.88 nanowire is correlated with the calculated gap energy at the A point and the L point of the Brillouin zone for InAs and InSb0.125As0.875, respectively. We draw a one-to-one correspondence between the variation of the E1 gap and the fundamental E0 gap in the calculated electronic band structure and propose the graded fundamental gap energy across the axis of the nanowire., Comment: 19 pages, 6 figures

The fluorite to pyrochlore phase transition in La2Zr2O7 has been studied in the literature for decades in the context of thermal barrier coatings and reinforcement materials. However, the nature of the phase transition in this system is still not well understood. In this article we have investigated the phase transition in La2Zr2O7, calcined at different temperatures, using powder x-ray diffraction and Raman measurements. Rietveld analyses of the x-ray data suggest a fluorite to pyrochlore phase transition in the system occurring between 1000-1450oC. Nonetheless, Raman spectra, recorded with different excitation wavelengths (\lambda_ex) reveal that the dynamics of phase transition is different in the near-surface region and in the bulk inside. While the near-surface region carried the signatures of a pure pyrochlore phase, the temperature dependent Raman measurements with \lambda_ex=785 nm suggest that locally formed oxygen related disordered states are present in the bulk of the system., Comment: 24 pages, 7 figures

The article presents a mapping of the residual strain along the axis of InAs/InSb heterostructured nanowires. Using confocal Raman measurements, we observe a gradual shift in the TO phonon mode along the axis of these nanowires. We attribute the observed TO phonon shift to a residual strain arising from the InAs/InSb lattice mismatch. We find that the strain is maximum at the interface and then monotonically relaxes towards the tip of the nanowires. We also analyze the crystal structure of the InSb segment through selected area electron diffraction measurements and electron diffraction tomography on individual nanowires., Comment: 14 pages, 5 figures

We study band alignment in wurtzite-zincblende polytype InAs heterostructured nanowires using temperature dependent resonance Raman measurements. Nanowires having two different wurtzite fractions are investigated. Using visible excitation wavelengths in resonance Raman measurements, we probe the electronic band alignment of these semiconductor nanowires near a high symmetry point of the Brillouin zone (E$_{1}$ gap). The strain in the crystal structure, as revealed from the shift of the phonon mode, explains the observed band alignment at the wurtzite-zincblende interface. Our experimental results are further supported by electronic structure calculations for such periodic heterostructured interface., Comment: 18 pages, 10 figures