301 results on '"Hirayama, Hideki"'
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2. M-plane GaN terahertz quantum cascade laser structure design and doping effect for resonant-phonon and phonon-scattering-injection schemes
3. Investigation of V/III ratio dependencies for optimizing AlN growth during reduced parasitic reaction in metalorganic vapor phase epitaxy
4. High growth temperature for AlN by jet stream gas flow metalorganic vapor phase epitaxy
5. Excitons in (Al,Ga)N quantum dots and quantum wells grown on (0001)-oriented AlN templates: Emission diagrams and valence band mixings.
6. High-Temperature Operating Narrow-Period Terahertz Quantum Cascade Laser Designs
7. Estimation of Junction Temperature in Single 228 nm‐Band AlGaN Far‐Ultraviolet‐C Light‐Emitting Diode on c‐Sapphire Having 1.8 mW Power and 0.32% External Quantum Efficiency
8. Efficiency droop in AlGaN crystal-based UVB LEDs in the context of electron blocking mechanism
9. Realizing high injection current density up to 200 kA-cm−2 in electrically pumped AlGaN ultraviolet laser diodes on c-Sapphire substrate
10. Reduction of parasitic reaction in high-temperature AlN growth by jet stream gas flow metal–organic vapor phase epitaxy
11. Achieving 9.6% efficiency in 304 nm p-AlGaN UVB LED via increasing the holes injection and light reflectance
12. Nonrelevant quantum levels effecting on the current in 2-well terahertz quantum cascade lasers
13. Optical gain reduction caused by nonrelevant subbands in narrow-period terahertz quantum cascade laser designs
14. Investigation of off-cut angle of sapphire for epitaxial lateral overgrowth of AlN and fabrication of high-quality AlN template
15. Progress and Outlook of 10% Efficient AlGaN‐Based (290–310 nm) Band UVB LEDs.
16. Progress and Outlook of 10% Efficient AlGaN‐Based (290‐310 nm)‐Band UVB LEDs
17. Increasing the output power of a heavily doped terahertz quantum cascade laser by avoiding the subband misalignment.
18. Leakages suppression by isolating the desired quantum levels for high-temperature terahertz quantum cascade lasers
19. Temperature dependence of nonradiative recombination processes in UV-B AlGaN quantum well revealed by below-gap excitation light
20. Achieving Zero Efficiency Droop in Highly Efficient N-Polar AlGaN Tunnel Junction-based 254 nm DUV LED’
21. Evaluation of GaN/AlGaN THz quantum-cascade laser epi-layers grown on AlGaN/Si templates by MOCVD
22. Improved crystal quality of semipolar AlN by employing a thermal annealing technique with MOVPE
23. M-plane GaN terahertz quantum cascade laser structure design and doping effect for resonant-phonon and phonon-scattering-injection schemes
24. AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
25. Significant improvement of injection efficiency in deep-UV LD structures by light Mg doping in p-core layer
26. Growth Techniques of AlN/AlGaN and Development of High-Efficiency Deep-Ultraviolet Light-Emitting Diodes
27. High-quality AlN template grown on a patterned Si(111) substrate
28. Recent Progress in AlGaN Deep-UV LEDs
29. Milliwatt‐Power AlGaN Deep‐UV Light‐Emitting Diodes at 254 nm Emission as a Clean Alternative to Mercury Deep‐UV Lamps
30. Ultraviolet LEDs
31. List of contributors
32. Short-period scattering-assisted terahertz quantum cascade lasers operating at high temperatures
33. Clean three-level direct-phonon injection terahertz quantum cascade laser.
34. Room-temperature optical gain in terahertz quantum cascade lasers based on GaAs/AlGaAs, GaN/AlGaN, ZnO/ZnMgO
35. 1.39- Watt Operation of THz Quantum Cascade Laser with Highly Doped Depopulation Layers
36. 0.57% EQE and 4.2 mW Power of 232 nm AlGaN Far-DVC LED with Modulation Mg doped p-interlayer and Polarization Doped Transparent p-Contact Layer
37. Nonrelevant quantum levels limited laser dynamic in narrow-period terahertz quantum cascade lasers
38. High Doping Concentration and Variable Al Composition THz Quantum Cascade Lasers with 1.39-Watt Operation
39. Correlation between excitons recombination dynamics and internal quantum efficiency of AlGaN-based UV-A multiple quantum wells.
40. Step-flow growth of Al droplet free AlN epilayers grown by plasma assisted molecular beam epitaxy
41. Milliwatt-power far-UVC AlGaN LEDs on sapphire substrates
42. Over One Watt Output Power Terahertz Quantum Cascade Lasers by Using High Doping Concentration and Variable Barrier‐Well Height
43. Surface-emitting photonic crystal terahertz quantum cascade laser adopting uniform triangular prism photonic crystal with a double-metal waveguide
44. Limitation of parasitic absorption in designs of three-state terahertz quantum cascade lasers with direct-phonon injection
45. Threshold temperature in annihilation radius of dislocation for AlN
46. Improvement of crystal orientation in AlN with controlled inversion domain
47. Reduction of parasitic reaction in high-temperature AlN growth by jet stream gas flow metal-organic vapor phase epitaxy
48. Milliwatt‐Power AlGaN Deep‐UV Light‐Emitting Diodes at 254 nm Emission as a Clean Alternative to Mercury Deep‐UV Lamps.
49. Highly Transparent p‐AlGaN‐Based (326‐342 nm)‐Band UVA LEDs on AlN Templates: Recent advances and our perspectives
50. High Injection Current Density Up to 200 Ka-Cm-2 in Electrically Pumped Algan Ultraviolet Laser Diodes on C-Sapphire Substrate
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