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We have analyzed and modeled the reverse-biased gate leakage current in a Schottky-gate AlGaN/GaN high electron mobility transistor. While the Poole–Frenkel emission current along conductive threading dislocations dominates at low negative gate bias, the trap-assisted tunneling of thermally energized electrons and the thermal emission of electrons from threading dislocations aided by dislocation-related states at multiple energy levels within the AlGaN bandgap are dominant at moderate to large reverse bias. Additionally, deep trap levels of high density localized near the gate/AlGaN interface cause significant leakage at 473 K at low to moderate reverse bias, which could be specific to the device we have analyzed. We extracted about 10 12 cm − 2 traps near the AlGaN/GaN interface from the difference of the barrier layer electric field profile obtained from the experimental high-frequency capacitance–gate voltage and the one needed for final matching. The thermionic- and the thermionic field-emission currents are considerably low; the latter, however, dominates in the defect-free case. Finally, the simulation framework we developed here helped us identify various conduction mechanisms contributing to the reverse-biased gate leakage and the density and electronic structure of the responsible defects. [ABSTRACT FROM AUTHOR]

The total coronavirus disease (COVID-19) cases caused by the severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) infection have reached 139 million worldwide and nearing 3 million deaths on April 16, 2021. The availability of accurate data is crucial as it makes it possible to analyze correctly the infection trends and make better forecasts. The reported recovered cases for many US states are surprisingly low. This could be due to difficulties in keeping track of recoveries, which resulted in higher numbers for the reported active cases than the actual numbers on the ground. In this work, based on the typical range of recovery rate for COVID-19, we estimate the active data from the total cases and death cases and bring out a correction for the data for all the US states reported on Worldometer. [ABSTRACT FROM AUTHOR]

Introduction: Cervical cancer is one of the commonly occurring cancers among women. More than ninety percent of mortality related cervical cancer are reported from middle and low-income countries. Objectives: To assess the knowledge regarding cervical cancer and HPV vaccination among medical undergraduates in Mangalore. Materials and Method: This cross sectional study was conducted among medical undergraduates studying at Kasturba Medical College, Mangalore. A pre tested semi structured questionnaire was used for collection of the data. Approval from Institutional Ethics Committee of Kasturba Medical College, Mangalore was obtained before commencement of the study. Data was entered and analysed using SPSS ver. 11.5. Results: The study involved 154 (40.3%) males and 228 (59.7%) female students. It was found that that aetiology for cervical cancer was known among 347 (90.8%) and 326 (85.3%) knew about correct mode of transmission. Awareness regarding ideal age for HPV vaccination was observed in 45.5% (n=174) of the participants. Conclusion: The present study showed that awareness regarding cervical cancer was good, but the knowledge regarding HPV vaccination was sub optimal among medical undergraduates [ABSTRACT FROM AUTHOR]

Motivation: Elementary (flux) modes (EMs) have served as a valuable tool for investigating structural and functional properties of metabolic networks. Identification of the full set of EMs in genome-scale networks remains challenging due to combinatorial explosion of EMs in complex networks. It is often, however, that only a small subset of relevant EMs needs to be known, for which optimization-based sequential computation is a useful alternative. Most of the currently available methods along this line are based on the iterative use of mixed integer linear programming (MILP), the effectiveness of which significantly deteriorates as the number of iterations builds up. To alleviate the computational burden associated with the MILP implementation, we here present a novel optimization algorithm termed alternate integer linear programming (AILP). Results: Our algorithm was designed to iteratively solve a pair of integer programming (IP) and linear programming (LP) to compute EMs in a sequential manner. In each step, the IP identifies a minimal subset of reactions, the deletion of which disables all previously identified EMs. Thus, a subsequent LP solution subject to this reaction deletion constraint becomes a distinct EM. In cases where no feasible LP solution is available, IP-derived reaction deletion sets represent minimal cut sets (MCSs). Despite the additional computation of MCSs, AILP achieved significant time reduction in computing EMs by orders of magnitude. The proposed AILP algorithm not only offers a computational advantage in the EM analysis of genome-scale networks, but also improves the understanding of the linkage between EMs and MCSs. [ABSTRACT FROM AUTHOR]

The program/erase process in floating gate (FG) flash memory devices is modeled by considering sequential quantum tunneling of electrons and taking into account quantum confinement in the channel and FG. We precisely determine location of quasi-bound or decaying quantum states in the inversion layer and in FG comprising a nanocrystal (NC) layer, and compute their lifetime by finding the complex eigenenergy of the resonance transmission problem. Self-consistent solutions to Poisson and Schrödinger equations are obtained for the quantum states of electrons in the inversion layer of MOS devices, and subsequently, sequential Fowler–Nordheim tunneling current to the spherical NCs is obtained using finite-element method considering open boundary conditions. The method described here is capable of determining the tunneling current accurately for arbitrary potential profiles, and can be applied for composite tunnel dielectric stacks. Our results show good agreement with the experimental data for high- $k$ interpoly dielectric flash memory devices. [ABSTRACT FROM PUBLISHER]