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Summary: This effort is founded on the modeling and simulation of the GaAsPN/GaP quantum dot (QD) solar cell. This quaternary alloy is one of the III‐V semiconductors, which gained importance in the recent years for optoelectronic applications. This importance comes from the fact that the quaternary GaAsPN can be a well‐grown lattice matched to GaP and Si substrates and to the bandgap that can be decreased drastically with the incorporation of nitrogen and arsenic into GaP, improving consequently the absorption and the wavelengths near the red part. These qualities make GaAsPN a good candidate for the growth on the Si substrate and low‐cost solar cell fabrication. The optical properties of GaAsPN/GaP QDs, such as strain, critical thickness, bandgap energy, the external quantum efficiency, and absorption coefficient, have been reported. The heterostructures consist of GaAs0.18P0.814N0.006 QDs separated by GaP barrier layers. The width and thickness of QDs are about 5 and 5 nm, respectively. Our results have been shown that 20 GaAs0.18P0.814N0.006/GaP QD layers produce a short‐circuit current of about 3.55 mA/cm2 and an efficiency of about 7.5%. In addition, we will be able to extend the absorption edge of a GaP solar cell from 0.48 μm to 0.5 μm for the same QD number layers inserted. The temperature effect on efficiency is considered. [ABSTRACT FROM AUTHOR]

• We report the modelling and optimization of a solar cell based on new material using SCAPS software. • A high absorption coefficient was found. • The influence of thickness, temperature, resistances and defects on the different electrical parameters. • A high conversion efficiency was obtained under optimum parameters. • A respectable compatibility has been shown compared with the results of wxAMPS software. Based on several semiconductor research, we have studied one of the new semiconductors, due to its exciting physical proprieties that in turn solve some problems in the photovoltaic's industry. We have divided this work into two parts. The first part, is to study the optical proprieties of ZnSnN 2 , as calculation of the absorption coefficient, bandgap, reflection coefficient, and transmission coefficient. As for the second part, a study of some parameters that affect the efficiency of p-CuCrO 2 (CCO)/ n-ZnSnN 2 (ZTN) solar cell using SCAPS-1D software, and our results are compared with the results of another software (wxAMPS), where results showed great compatibility with the presence of weak uncertainty. We have studied the influence of many parameters such as the thickness of the absorber layer (n-ZnSnN 2), the thickness of the buffer layer (p-CuCrO 2) , the temperature, the series resistance (R s), the shunt resistance (R sh) and the defect density on the performance of ZnSnN 2 solar cells which included in the real device. The photovoltaic parameters have been calculated using AM1.5G solar irradiance at the intensity of one sun, a temperature of 300 K, and considering the flat band condition at the interface. We have been achieving a high-efficiency of η ≈ 22% without defects. Given the characteristics of this new semiconductor ZnSnN 2 , which composed of earth-abundant, non-toxic and inexpensive element, as well as a high absorption coefficient, it can be considered as an alternative for PV and optoelectronic applications. [ABSTRACT FROM AUTHOR]

This paper reports simulations of gradual bandgap CIGS absorber and its impact on the characteristics of a solar cell. The bandgap of the CIGS absorber varies linearly and drops from E gmax (at the junction limit) to E gmin (in the vicinity of the rear contact).We introduce an effective absorption coefficient based on this variation. We will demonstrate that this gradual profile contributes to an improvement up to 171 mV of the open circuit voltage V oc of the cell that is linked to the modification of the internal electrical field distribution within the absorber. However, a joint reduction of 1.50 mA/cm 2 of short circuit current density, J sc , is observed. Overall, the conversion efficiency increases from 19.2%, for a uniform bandgap absorber structure, to 24.9% in that case of gradual bandgap. Additionally, we investigate the impact of absorber thickness and temperature on cell characteristics. [ABSTRACT FROM AUTHOR]

This study aims to investigate the different optical properties of the ZnSnN 2 absorber layer such as absorption, reflection and transmission coefficients. The effects of the ZnSnN 2 absorber layer thickness, temperature,and defect density on electrical parameters such as short circuit current density, open circuit voltage, fill factor and efficiency have also been studied in detail. These factors play an important role in the performance of the ZnO/CdS/ZnSnN 2 /Si/Mo structure. The highest efficiency of about 23.32 % is achieved without defects in the ZnSnN 2 absorber layer, under the 1-sun AM1.5 solar spectrum, by applying the flat band condition and considering the strain values of 0.37 % (ZnSnN 2 /Cds) and 7.17 % (ZnSnN 2 /Si). In addition to high efficiency, the ZnSnN 2 has a high absorption coefficient. This device will play a crucial role in optoelectronic applications. This structure is a promising candidate for low cost and high efficiency photovoltaic technology. [ABSTRACT FROM AUTHOR]