1. Influences of silica additive on sintering and Hall effect of novel transparent In2O3 semiconductive ceramics.
- Author
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Wang, Xinyuan and Lu, Bin
- Subjects
- *
HALL effect , *TRANSPARENT ceramics , *CERAMICS , *CARRIER density , *ADDITIVES , *CHARGE carrier mobility , *YTTRIUM aluminum garnet - Abstract
Polycrystalline transparent In 2 O 3 semiconductive ceramics are successfully fabricated by oxygen atmosphere sintering for the first time. The starting rounded In 2 O 3 particles are obtained via pyrolyzing the nanoplate-like hydrated basic sulfate precursor prepared by a chemical precipitation route using hexamethylenetetramine as the precipitant. The silica additive dissolves into the In 2 O 3 lattice to form an interstitial solid solution, which promotes the diffusion rate during high-temperature densification process and thus helps to achieve good optical quality for In 2 O 3 ceramics. The created interstitial oxygen further compensates the oxygen vacancy in the ceramic body to result in a higher resistivity and lower carrier concentration / carrier mobility. The optical qualities of In 2 O 3 ceramics are also found to have slight effects on the resistivity, carrier mobility, carrier concentration, and Hall coefficient. Image, graphical abstract [ABSTRACT FROM AUTHOR]
- Published
- 2021
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