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The article presents a mapping of the residual strain along the axis of InAs/InSb heterostructured nanowires. Using confocal Raman measurements, we observe a gradual shift in the transverse optical phonon mode along the axis of these nanowires. We attribute the observed shift to a residual strain arising from the InAs/InSb lattice mismatch. We find that the strain is maximum at the interface and then monotonically relaxes towards the tip of the nanowires. We also analyze the crystal structure of the InSb segment through selected area electron diffraction measurements and electron diffraction tomography on individual nanowires. [ABSTRACT FROM AUTHOR]

Structural and functional applications involving La 2 Zr 2 O 7 exploit the data on fluorite to pyrochlore phase transition, because of the strong dependence on the physical properties of the system with its phase stability. Though studied for decades, the origin of fluorite to pyrochlore phase transition in La 2 Zr 2 O 7 is still not well understood. In this article, we confirm the presence of a fluorite to pyrochlore phase transition in La 2 Zr 2 O 7 system in the temperature range 1000–1450 °C. The phase transition along with the associated structural properties is investigated with the help La 2 Zr 2 O 7 samples calcined at different temperatures. [ABSTRACT FROM AUTHOR]

In this study, we attempt to find the origin of atypical doping concentration dependant electrical properties of group III element (Al, Ga, In) doped ZnO thin films. The carrier density and mobility of these films are measured and compared for a wide range of doping concentrations. It is found that donor density determines the electrical properties of the films for a low level of doping, whereas lattice defects play a dominant role beyond a certain level of doping concentration. We also demonstrate an interrelationship between the electrical properties and the structural/optical properties of the films. We find 2% as optimum doping concentration for Al-, Ga- or In-doped ZnO for obtaining highest conducting layers and Ga emerges as the most effective dopant among all. [ABSTRACT FROM AUTHOR]