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Yb:CALYGLO crystals with a dopant concentration of 5 at.% were successfully grown using the Czochralski method. The crystal samples were extensively studied to analyze their structure, room temperature and low temperature spectra, and laser properties. The highest absorption cross-section at 977 nm was calculated to be 1.83 × 10−20 cm2 for σ polarization and 5.32 × 10−20 cm2 for π polarization. Similarly, the emission cross-section was determined to be 1.38 × 10−20 cm2 at 980 nm for σ polarization and 2.28 × 10−20 cm2 at 981 nm for π polarization, with a full width at half maximum (FWHM) of 50.3 nm and 89.5 nm, respectively. The fluorescence lifetime of the 5 at.% Yb:CALYGLO crystal at 2F5/2 was measured to be 1.10 ms. Additionally, gain cross-sections were calculated for different β values. In the continuous laser experiment, the crystal demonstrated a laser output of 20.15 W at 1057 nm, with a slope efficiency of 53.3%. These experimental findings indicate that the lattice of Y3+ in the crystal is partially replaced by Lu3+ and Gd3+, resulting in a broader spectrum. Consequently, this crystal shows promising potential as a gain medium for ultrashort pulse laser crystals. [ABSTRACT FROM AUTHOR]

Sm:YAlO 3 (Sm:YAP) crystal with size of Φ28 × 80 mm3 was grown by Czochralski (Cz) method. Polarized absorption spectra and fluorescence spectra of Sm:YAP crystal were discussed for the first time. The peak emission cross-sections were calculated to be 0.80 × 10−21 cm2 (604 nm for a-polarization), 1.82 × 10−21 cm2 (604 nm for b-polarization) and 1.63 × 10−21 cm2 (610 nm for c-polarization), respectively. The Judd-Ofelt (JO) intensity parameters were calculated to be Ω 2 = 2.59 × 10−20 cm2, Ω 4 = 1.78 × 10−20 cm2 and Ω 6 = 2.98 × 10−20 cm2, respectively. The decay lifetime of 4G 5/2 energy level was measured to be 2.51 ms. All above results indicate the Sm:YAP crystal may be a potential candidate of reddish-orange laser pumped directly by the GaN/InGaN laser diode. • Sm:YAlO 3 crystal was grown by Cz method. • Polarized optical spectra of Sm:YAlO 3 crystal were investigated. • The transitions of 4G 5/2 → 6H 7/2 have the highest branching ratio value, which is suitable for reddish-orange laser. [ABSTRACT FROM AUTHOR]

Pr 3+ -doped YAlO 3 (YAP) single crystal was successfully grown by the Czochralski (Cz) method. Polarized absorption and polarized fluorescence spectra were measured at the room temperature. The spectroscopic parameters based on the polarized absorption spectra were calculated by Judd-Ofelt (J-O) theory for the first time. The fluorescence lifetime of 3 P 0 energy level was fitted to be 19.16 μs with the quantum efficiency of 95.8%. Through the analyzing of the spectroscopic properties, Pr:YAP crystal was demonstrated to be a promising candidate for solid state laser operation. [ABSTRACT FROM AUTHOR]

LaMgAl 11 O 19 (LMA) crystal with nominal Sm3+ concentrations of 8 at.% was grown by the Czochralski method. Polarized absorption spectra, polarized emission spectra and fluorescence decay curve of Sm:LMA crystal were recorded at room temperature. The absorption cross-sections at 404 nm were calculated to be 2.33 × 10−20 cm2 and 0.86 × 10−20 cm2 for σ and π polarization, respectively. The spontaneous transition rates, branching ratios and the radiative lifetime of the 4G 5/2 multiplet, were calculated. The Judd-Ofelt theory has been applied to evaluate the Ω t (t = 2, 4, 6) intensity parameters. The highest stimulated emission cross-sections for the 4G 5/2 → 6H 7/2 transition around 594 nm were calculated to be 1.67 × 10−21 cm2 for σ polarization and 1.15 × 10−21 cm2 for π polarization, with full width at half maximum (FWHM) of 7.68 nm and 7.27 nm, respectively. The fluorescence lifetime of the 4G 5/2 manifold was 1.84 ms. All the results show that Sm:LMA crystal would be a promising orange-red solid state laser material. • The most intensive absorption line of Sm3+ ion, suitable for 405 nm InGaN laser diode. • The rigidity of Sm:LMA crystal is higher than some host crystals. • The value Ω 2 of Sm:LMA crystal is comparable to Sm:LiYF 4. • The large parameter σ em τ of Sm3+ in LMA is beneficial for the solid state laser. [ABSTRACT FROM AUTHOR]