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The total ionizing dose response of hybrid FinFET with a modified gate stack (GS) is investigated and examined for the various ultra-thin body (UTB) layers and combination of gate oxide stacks. Incorporation of UTB layer to the conventional FinFET enhances the mechanical strength of the device. While being irradiated, conventional FinFET with UTB layer reduces the accumulation of trap charges to a certain level. Further, reduction of these charges can be achieved by using a high-k dielectric with UTB layer. This reduction in interface trap charges enhance the OFF-state performance while maintaines the positive threshold voltage of the device. The combination of UTB and GS in SOI-FinFET renders it more reliable and tolerant to ionizing dose. • Total ionizing dose response of hybrid FinFET with a modified gate stack (GS) is investigated. • Incorporation of UTB layer to the conventional FinFET enhances the mechanical strength of the device. • Under radiation FinFET with UTB layer reduces the accumulation of trap charges. • Reduction in interface trap charges enhances the OFF state performance. • The combination of UTB and GS in SOI-FinFET renders it more reliable and tolerant to ionizing dose. [ABSTRACT FROM AUTHOR]