1. AlN/GaN/InGaN Coupling-Channel HEMTs for Improved gm and Gain Linearity.
- Author
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Lu, Hao, Hou, Bin, Yang, Ling, Niu, Xuerui, Si, Zeyan, Zhang, Meng, Wu, Mei, Mi, Minhan, Zhu, Qing, Cheng, Kai, Ma, Xiaohua, and Hao, Yue
- Subjects
GALLIUM nitride ,TRANSISTORS ,MODULATION-doped field-effect transistors ,FREQUENCIES of oscillating systems - Abstract
In this article, we report on the effective transconductance (g
m ) and gain linearity improvement of submicrometer gate AlN-barrier-based transistors using GaN/InGaN coupling-channel structures. The fabricated AlN/GaN/InGaN coupling-channel high electron mobility transistor (CC-HEMT) showed flat gm profile, greatly reduced gm derivatives, and constant dynamic source resistance compared with an AlN/GaN HEMT using the same fabrication process. The highest extrinsic current gain cutoff frequency (ƒT ) of 55 GHz and the maximum oscillation frequency (ƒmax ) of 80 GHz were obtained for 0.15- μm gate-length transistors, both of which remain constant values across wide input voltage (VGS ) of 4 V. Moreover, a significant theoretical OIP3 value boost by 7.1 dB has been observed using the CC-HEMT as compared to the AlN/GaN HEMT. The superior linearity performance of the CC-HEMT can be attributed to the strong channel-to-channel coupling effect. The drain bias-dependence of gm , ƒT , and ƒmax versus VGS profiles illustrate that the linearity characteristics of the CC-HEMT greatly improve with an increase in VDS . These results demonstrate the AlN/GaN/InGaN material system as a viable platform for high frequency requiring high-linearity applications. [ABSTRACT FROM AUTHOR]- Published
- 2021
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