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The electrical manipulation of magnetization is appealing to the relevant experiment and spintronic device. In this paper, we focus on the electrical and magnetic properties of a thin film cleaved from the nonmagnetic half-Heusler compound CoTiSb. By means of the first-principles calculations, we find that the surface of TiSb termination possesses ferrimagnetism with a magnetic moment of 0.35 (0.49) μB per unit cell without (with) Hubbard U, which can persist below the Curie temperature of 48 (54) K. What is more, such a surface magnetism can be tuned to nonmagnetism by gate-induced hole doping with a concentration of 2.83 × 1014 (3.55 × 1014) cm−2. This magnetic tunability of the CoTiSb slab provides a platform to realize the pseudo-spin valve with both the magnetic electrodes and nonmagnetic space layer made of the same material without hetero-interfaces. [ABSTRACT FROM AUTHOR]

Manipulating magnetism by electrical means is a very effective method to realize ultra-low power spintronic-integrated circuits. In this work, based on first-principles calculations, we demonstrate that the recently successfully fabricated two-dimensional semiconductor material, InO monolayer, can be tuned to the half-metallic state by applying a gate voltage to generate hole doping. Such a ferromagnetic state is independent of the partially occupied d - or f -orbital, it is associated with a narrow valence band. Our work provides theoretical guidance for the experimental adjustment of two-dimensional magnetic semiconductor, especially two-dimensional half-metallic material. • Gate voltage induces transition from paramagnetic to ferromagnetic phase in 2D InO. • Resulting half-metallic state holds significant potential for spintronics devices. • Electrical manipulation of magnetism is effective for ultra-low-power spintronics. [ABSTRACT FROM AUTHOR]

Highlights • Cu 2 Si nanoribbons with zigzag edges have flat bands of edge states. • Interaction between the edge states can induce sizable magnetism in the ribbon. • Carrier doping can induce sizable magnetism in the ribbon too. • Carrier doping can further control the real space distribution of magnetic moment. Abstract The surface states of three dimensional topological nodal line semimetal (TNLSM) form a flat band within the projection of the closed nodal line onto the surface. Such a flat band implies a singular surface density of states which, if close to the Fermi energy, is apt to induce a magnetic phase transition. Similar physics is expected in a two-dimensional (2D) TNLSM. In the framework of density functional theory, we study the edge states of Cu 2 Si monolayer which is currently an experimentally feasible sample of 2D TNLSM. We find that the flat bands attached to two kinds of zigzag edges of Cu 2 Si are very close to the Fermi energy. Moreover, we explore the possible magnetism of Cu 2 Si nanoribbons terminated by these zigzag edges. We find that a narrow ribbon has ferromagnetic ground states with sizable magnetic moments, owing to the interaction between the edge states localized at the opposite edges. In addition, carrier doping in a nanoribbon can induce the transition between the ferromagnetic and nonmagnetic states. More interestingly, the magnetic moment distribution in real space from one to another edges can be readily modulated by the carrier doping. Our study indicates that Cu 2 Si nanoribbons with controllable magnetism provide a new platform to realize the device functions of spintronics. [ABSTRACT FROM AUTHOR]