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A series of novel externally reconfigurable power electronic modules (RPEMs) are invented to increase the flexibility of power modules and their application purposes. In this article, the concept of RPEMs, their switching arrangements, and power-module-based architectural design are demonstrated. An RPEM is then designed, analyzed through simulations, and compared with the conventional fixed-configuration power electronic modules. The sizes of the power modules and used power terminals are kept similar to avoid any differences in power loop inductance values solely due to various trace pad sizes. In addition, similar gate/source pads and signal pins are used for all of the designed power modules to have constant switching dynamics in all modules. The comparison results show that the internal parasitic inductance and performance are still comparable with the conventional modules despite having high configurability. The designed RPEM and a conventional full-bridge (FB) power module are fabricated and characterized. The experimental tests show that the difference between the overshoot voltages on both RPEM and FB power modules is less than 2%. Such flexibility without compromising the power module performance decreases the engineering time for designing different power modules for various power electronic converters; hence, the production speed can be improved while decreasing the overall module cost. [ABSTRACT FROM AUTHOR]

As a critical energy-conversion system component, power semiconductor modules and their layout optimization has been identified as a crucial step in achieving the maximum performance and density for wide bandgap technologies (i.e., GaN and SiC). New packaging technologies are also introduced to produce reliable and efficient multichip power module (MCPM) designs to push the current limits. The complexity of the MCPM layout is surpassing the capability of a manual, iterative design process to produce an optimum design with agile development requirements. An electronic design automation tool called PowerSynth has been introduced with on-going research toward enhanced capabilities to speed up the optimized MCPM layout design process. As a part of this continuing research, in PowerSynth v1.9, a constraint-aware layout engine has been developed, which enables integrating heterogeneous components, handling complex geometry, exploring a larger solution space, improved success rate, and providing options for multiobjective optimization algorithms. The layout engine is generic, scalable, and efficient in performing electro-thermal optimizations on both 2-D and 2.5-D power modules. To validate these enhanced design capabilities, a 2.5-D full-bridge power module layout is designed, optimized, fabricated, and tested with measurement results matching closely with model prediction. This result closes the loop in the power electronics design process with an experimentally validated module design automation flow. [ABSTRACT FROM AUTHOR]

With high-temperature power devices available, the support circuitry required for efficient operation, such as a gate driver, is needed as part of a complete high-temperature solution. The design of an integrated silicon carbide (SiC) gate driver using a 1.2-μm complementary metal–oxide–semiconductor (CMOS) process is presented. Adjustable drive strength is added to facilitate a minimal external component requirement for high-temperature power modules and lays the groundwork for dynamic adjustment of drive strength. The adjustable drive strength feature demonstrates a capability of reducing overshoot and controlling dv/dt dynamically. Measurement of the gate driver was performed driving a power mosfet gate over temperature, exceeding 500 °C. High-speed and high-voltage room temperature evaluation is provided, demonstrating a system capable of high performance over temperature. The driver accomplishes better than 75 ns of rise and fall time driving the Cree CPM3-0900-0065B from room temperature to over 500 °C indicating that it will be ideal for integration into an all-SiC power module where driver, protection circuits, and power devices are fabricated in SiC. [ABSTRACT FROM AUTHOR]