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In this work, the design and simulation of an GaInP single junction solar cell are presented. The work focuses mainly on the optimization of the PN junction thicknesses of n-base and pemitter cell layers in order to improve the cell conversion efficiency. Besides this optimization, the layers of the cell window AlGaInP and an added buffer AlGaAs were also optimized in term of doping and thicknesses using Atlas tool of SILVACO TCAD. The cell is simulated under the conditions of 1 sun and AM1.5G solar spectrum at 25°C. The simulated GaInP solar cell demonstrates an efficiency (η) of 22.42%. The cell shows different electrical behaviors in terms of short circuit current density (Jsc), open circuit voltage (V∝), fill factor (FF), and external quantum efficiency (EQE). The obtained results are compared with those reported in the literature. Simulation results of the cell are: a Jsc of 18.35 mA/cm2, V∝ of 1.41 V and FF of 86.81% with the corresponding n-base layer and pemitter layer thickness of 0.410 µm and 0.174 µm respectively and the total device thickness of 0.65 µm. According to these results, the proposed cell demonstrates an improvement in the efficiency and a reduction of the used GaInP material. [ABSTRACT FROM AUTHOR]

In this paper, the CuInGaSe 2 based solar cell optimization has been established. We have simulated the structural strain effect. The effect of gallium concentration on the optical properties and the quantum external efficiency EQE was investigated. We also optimized the concentration x at low defect densities. The optimal gallium concentration is 0.30. We obtained an efficiency of the CuIn 0.70 Ga 0.30 Se 2 absorber solar cell around 24% with a strain ɛ = 0.64% and material defects densities equal to 1.2x1015cm−3. This work has been validated by theoretical and experimental studies. This study allows us to find a compromise between concentration x and defect concentrations in order to improve the performance and high efficiency of the solar cell. • The effect of structural deformation has been studied and simulated. • The effect of gallium on the optical properties and EQE was investigated. • We optimized the x concentration at low defect concentrations. • An efficiency of the solar cell which is equal to 24% with ɛ = 0.6% was obtained. • This work is validated by a theoretical and experimental study. [ABSTRACT FROM AUTHOR]

This study aims to investigate the different optical properties of the ZnSnN 2 absorber layer such as absorption, reflection and transmission coefficients. The effects of the ZnSnN 2 absorber layer thickness, temperature,and defect density on electrical parameters such as short circuit current density, open circuit voltage, fill factor and efficiency have also been studied in detail. These factors play an important role in the performance of the ZnO/CdS/ZnSnN 2 /Si/Mo structure. The highest efficiency of about 23.32 % is achieved without defects in the ZnSnN 2 absorber layer, under the 1-sun AM1.5 solar spectrum, by applying the flat band condition and considering the strain values of 0.37 % (ZnSnN 2 /Cds) and 7.17 % (ZnSnN 2 /Si). In addition to high efficiency, the ZnSnN 2 has a high absorption coefficient. This device will play a crucial role in optoelectronic applications. This structure is a promising candidate for low cost and high efficiency photovoltaic technology. [ABSTRACT FROM AUTHOR]

A combination of a Copper Indium Gallium Selenide (CIGS) and Silicon (Si) layer has been recognized as an excellent choice for producing heterojunction based solar cells with improved efficiency and low cost processing techniques. The quaternary compound CIGS and silicon (Si) regions exhibit a lattice mismatch of about 5%, which induces a strain and impacts the electronic characteristics of the CIGS/Si heterojunction solar cell. A new viewpoint suggests the integration of a silicon germanium (Si 1-y Ge y) layer in the CIGS/Si region to reduce the impact of lattice mismatch. The objective of this study is to investigate how different gallium and germanium concentrations (x Ga and y Ge) affect the following factors: lattice mismatch (ε) , critical thickness (h c) and absorption coefficient (α)of CIGS/SiGe based solar cells. It also aims to analyze how these concentrations impact the primary parameters used to evaluate solar cell performance such as external quantum efficiency, short circuit current density, fill factor, open circuit voltage and conversion efficiency. The simulation results agree well with the existing theoretical and experimental literature data, confirming the suitability of the physical characteristics employed in this numerical study. By tuning the concentrations of Gallium and Germanium, it is feasible to attain an efficiency of 24% owing to the lattice compensation phenomenon in Si 1-y Ge y layers. These findings hold significant implications for the development and advancement of solar cell technology, as well as for enhancing their conversion efficiency and commercialization. • A strain-compensated CIGS/Si structure was achieved by adding SiGe layer. • The incorporation of SiGe improves the absorbance and EQE of the CIGS solar cell. • The improvement of the solar performances of the CIGS is ensured by the SiGe layer. • Optimizing Ga, Ge concentrations makes it possible to achieve an efficiency of 24%. [ABSTRACT FROM AUTHOR]