1. On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide
- Author
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Fei-Fei Yan, H. M. Liu, Weiping Zhang, Xiao-Ye Xu, Guang-Can Guo, Liping Guo, Zhi-Hai Lin, Jin-Shi Xu, Jun-Feng Wang, Chuan-Feng Li, Guo-Ping Guo, Xiong Zhou, Jin-Ming Cui, and Qiang Li
- Subjects
Materials science ,Silicon ,Physics::Instrumentation and Detectors ,chemistry.chemical_element ,02 engineering and technology ,01 natural sciences ,010309 optics ,chemistry.chemical_compound ,Vacancy defect ,On demand ,0103 physical sciences ,Silicon carbide ,Quantum metrology ,Electrical and Electronic Engineering ,Quantum information science ,Spin-½ ,business.industry ,Astrophysics::Instrumentation and Methods for Astrophysics ,021001 nanoscience & nanotechnology ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Quantum technology ,chemistry ,Optoelectronics ,0210 nano-technology ,business ,Biotechnology - Abstract
Defects in silicon carbide have been explored as promising spin systems in quantum technologies. However, for practical quantum metrology and quantum communication, it is critical to achieve on-dem...
- Published
- 2019