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This letter proposes an indirect power dissipation level short circuit protection (IPDL-SCP) method for silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (mosfets). Due to differences between normal conducting and short-circuit (SC) conditions, this method is triggered by the voltage oscillation vss at the parasitic inductance (Lss) of the source and directly monitoring vds of SiC mosfet. For verification, the short circuit protection circuit is tested and proved functional on the SC test bench. Experimental results show that the protection circuit can respond to both hard switching fault (HSF) and fault under load (FUL), while the fastest response delays are 75 ns for HSF and 170 ns for FUL. Comparisons with other commonly used SC protection methods have also been made, which show that the proposed IPDL-SCP method has better performance in shorter protection delays. [ABSTRACT FROM AUTHOR]

In order to further improve the efficiency of dual-active-bridge (DAB) converter, a hybrid five-variable modulation scheme with minimal root mean square (rms) current is proposed in this article, which combines the traditional phase-shift and pulsewidth modulation schemes. By adopting the proposed optimal scheme, a wider zero-voltage switching (ZVS) operation range and lower rms current level are achieved simultaneously when compared with other modulation schemes, which significantly improves the efficiency of the DAB converter. Moreover, for the complexity of the proposed modulation scheme with five variables, the Fourier decomposition based analytical expressions are derived for the converter and a generalized performance analysis results are presented. Besides, in order to avoid the analysis error, especially at light-load condition, the optimization strategy takes the rms current as the optimal objective, which includes the eight harmonic component of the inductor current rather than just considers the fundamental component. And an offline particle swarm optimization algorithm is introduced to acquire the optimal operating points for the whole power range. To substantiate the effectiveness of the proposed modulation scheme, a comprehensive comparison among related works in terms of the rms value and ZVS range were carried out under various operation condition. Finally, a 1.2 kW experimental platform was built and the highest experimental efficiency under the proposed modulation scheme reaches 96.8%. [ABSTRACT FROM AUTHOR]

Asymmetric duty modulation (ADM), as a recently proposed modulation scheme, provides new chance to improve the performance of dual active bridge (DAB) converter. On this basis, an optimal ADM (OADM) scheme is proposed in this article to minimize the inductor peak-to-peak current over the whole voltage and power range. First, the DAB converter adopting ADM scheme is analyzed in frequency-domain and time-domain, and four operating modes are established. Then, the minimum peak-to-peak inductor current for each operating mode is obtained under Karush–Kuhn–Tucker condition, and the corresponding optimal closed-loop control with low calculation complexity is derived. Then, the key values and features of the OADM scheme are compared with recent state of the art, mainly including the inductor root mean square current and soft-switching performance. Finally, an experimental prototype was built to validate the efficiency enhancement of the converter by adopting the proposed OADM scheme. [ABSTRACT FROM AUTHOR]

In this article, an efficiency-oriented hybrid duty modulation (HDM) scheme is proposed for the dual active bridge (DAB) converter that can reduce the inductor root-mean-square (rms) current and extend the switch soft-switching range. First, a complete description of the combination forms of different modulation schemes is presented considering the allocation of the zero-voltage portion. A unified description for these combination forms is obtained in the frequency domain. Second, the symmetric–symmetric duty modulation (SSDM) scheme and asymmetric–symmetric duty modulation (A2SDM) scheme are established to minimize the inductor rms current by considering its fundamental component. Third, the characteristics of SSDM, A2SDM, and the traditional phase shift modulation schemes are compared from several aspects, mainly including the inductor rms current and the soft-switching performance. Furthermore, the loss breakdown analysis results for the three modulation schemes are presented and compared. According to these results, the HDM scheme is proposed to improve the overall efficiency of the DAB converter. Finally, an experimental prototype was built with a peak efficiency of 97%, which validates the effectiveness of the proposed modulation scheme. [ABSTRACT FROM AUTHOR]

Wide bandgap (WBG) devices offer the advantages of high frequency, high efficiency, and high power density to power converters due to their excellent performance. However, their low parasitic capacitance and fast switching speed also make them more susceptible to switching oscillations. The switching oscillations can cause voltage and current overshoots, shoot-through, electromagnetic interference, additional power loss, and even device damage, which can seriously affect the performance of power converters and systems. However, a comprehensive and in-depth overview is lacking on this topic. This article reviews the types, the causes and negative effects, the effects of parasitic parameters and suppression methods of these switching oscillations, which is helpful for practical engineering. First, the switching oscillations are divided into different types, and their causes and negative effects are reviewed. Then, the effects of different parasitic parameters on the switching oscillations are overviewed. It is found that due to the different physical structures of silicon carbide metal-oxide-semiconductor field-effect transistors, enhancement-mode gallium nitride high-electron mobility transistors (eGaN HEMTs), and cascode GaN HEMTs, the effects are also different. Finally, the main methods of suppressing the switching oscillations are summarized, and the advantages and disadvantages of these methods are presented. Furthermore, future research works on this topic and the conclusion of this paper are drawn, which will help readers deepen their understanding of the switching oscillations of WBG devices, and inspire readers to better use WBG devices for high-frequency and high-efficient power conversion. [ABSTRACT FROM AUTHOR]

Low-voltage enhancement-mode gallium nitride high electron mobility transistors (eGaN HEMTs) are a kind of promising devices to realize high-efficiency and high-power-density conversion because of their fast switching speed, low conduction, and switching losses. Since the reverse conduction loss of eGaN HEMTs accounts for a large part of switching losses, it is of great importance to improve the traditional switching analytical model to predict the reverse conduction loss. In this paper, a complete and accurate switching analytical model of low-voltage eGaN HEMTs is presented, which considers the effects of low-parasitic inductances, nonlinear junction capacitances and nonlinear transconductances. The turn-on and turn-off switching processes are described in detail, and the resulting equations are solved by using mathematical software such as MATLAB to predict the switching waveforms during the switching periods. And an accurate loss calculation method based on the proposed model is proposed including the reverse conduction loss. The accuracy of the proposed model is validated by comparing the predicted switching waveforms and the efficiency of a synchronous buck converter with the experimental results, respectively. Moreover, the proposed model is compared with the traditional model, which proves the advantages of the proposed model. In the end, according to the proposed complete model, the effect of the top switch (TS) gate resistance, the TS drain-source capacitance, power loop inductance, current ripple, the bottom switch (BS) gate resistance, the BS drain-source capacitance, and dead time on the loss breakdown of the synchronous buck converter is explored and some qualitative suggestions are given to improve the conversion efficiency based on these analyzing results. [ABSTRACT FROM AUTHOR]

High step-up boost converters with coupled inductor have attracted much attention in the fuel cell or photovoltaic grid-connected generation system, however, there are few literatures elaborated on the construction ideas and derivation methods of them. Accordingly, in order to obtain a clear roadmap on the derivation and inner connection of these converters, a comprehensive review and analysis are presented in this paper. First, the basic boost converter with coupled inductor is regarded as the basic topology, and its merits and demerits are analyzed in detail. Then, in order to address these demerits, various step-up techniques are introduced, such as the rectifier circuit, the active-clamped circuit, the multi-winding coupled inductor, and the voltage doubler rectifier; and numerous new topologies are continuously proposed by combinations and equivalent simplifications. In addition to a detailed synthesis of each topology, a comparative and quantitative analysis among some important converters is presented, and the optimal one is chosen to build a 250 W prototype. Finally, based on comparisons and analysis, the main characteristics and inner connections of these high step-up boost converters with coupled inductor are identified and clarified. [ABSTRACT FROM AUTHOR]

This paper presents a multi-period frame transient switching control (MP-TSC) scheme for buck converter with a controlled coupled inductor, aiming at improving the load transient response. The proposed buck converter utilizes a controlled coupled inductor as the output inductor. During a load transient, the coupled inductor is controlled as a small equivalent inductance so as to achieve fast transient regulation. While in the steady state, the coupled inductor behaves as a large inductance to reduce the output current ripple. Furthermore, on the basis of the proposed variable inductance circuit, an MP-TSC control scheme is proposed and implemented in a digital form. With the proposed control scheme, the load transient event is divided into n + 1 sub-periods, and in each sub-period, the capacitor-charge balance principle is used to determine the switching time sequence. Moreover, the control principle design and transient response index analysis are provided. Furthermore, its feasibility is validated in simulation and experiment with a 12–3.3V low-voltage high-current synchronous buck converter. Experimental results demonstrate that the voltage deviation of the proposed MP-TSC scheme (coupled coefficient of the controlled coupled inductor is 0.52) has improved by more than 79% compared to that with the auxiliary circuit disabled. [ABSTRACT FROM AUTHOR]

Insulated-gate bipolar transistor (IGBT) modules and dc-link capacitors are important parts in the majority of power electronic converters which contribute to cost, size, and failure rate on a considerable scale. This paper presents an online condition monitoring method for both IGBT modules and dc-link capacitors of power converters based on short-circuit current of an IGBT module, which is a good condition indicator according to the theory analysis. The failure prediction of dc-Link capacitor is realized by equivalent series resistance, which can be calculated by short-circuit current and a step voltage, and the bond wires fatigue can also be identified by the short-circuit current. The proposed method is capable for detecting small changes in the failure indicators of IGBT modules and electrolytic capacitors, and its effectiveness is validated by a confirmatory experiment. The novelty of the proposed method is that the degradations of IGBT modules and capacitors can be identified simultaneously, and has the merits of low cost and circuit simplicity [ABSTRACT FROM PUBLISHER]