Search

Magnetic skyrmions are promising building blocks for developing information storage and computing devices. It can be stabilized in a ferromagnetic thin film with the Dzyaloshinskii-Moriya interaction (DMI). The moving ferromagnetic skyrmion may show the skyrmion Hall effect, that is, the skyrmion shows a transverse shift when it is driven by a spin current. Here, we numerically and theoretically study the current-driven dynamics of a ferromagnetic nanoscale skyrmion in the presence of the anisotropic DMI, where the skyrmion has an elliptical shape. The skyrmion Hall effect of the elliptical skyrmion is investigated. It is found that the skyrmion Hall angle can be controlled by tuning the profile of the elliptical skyrmion. Our results reveal the relation between the skyrmion shape and the skyrmion Hall effect, which could be useful for building skyrmion-based spintronic devices with a preferred skyrmion Hall angle. Also, our results provide a method for the minimization of the skyrmion Hall angle for applications based on in-line motion of skyrmions. [ABSTRACT FROM AUTHOR]

Co-ferrite thin film with spinel structure is attractive for spintronics and multifunctional devices. So far, single-crystal substrates are necessary to introduce perpendicular magnetic anisotropy in co-ferrite films. In this paper, a unique process has been developed to deposit co-ferrite thin films onto thermally oxidized silicon wafer with perpendicular magnetic anisotropy. We have successfully prepared co-ferrite films with (00l) orientation. Those films show perpendicular coercivities as large as 12.8 kOe. X-ray diffractometry results revealed that compressive strain, which is introduced by the postannealing process rather than deposition process, is as large as 1.3% in films with (00l) orientation. The large coercivity and perpendicular magnetic anisotropy can be quantitatively explained by the magnetoelastic effect. This silicon-compatible fabrication process is useful to further extending the applications of co-ferrite films. [ABSTRACT FROM AUTHOR]