337 results on '"Anderson, Travis J."'
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2. PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates
3. Using machine learning with optical profilometry for GaN wafer screening
4. III-Nitride Nanowire Based Light Emitting Diodes on Carbon Paper
5. Methodology and implementation of a tunable deep-ultraviolet laser source for photoemission electron microscopy
6. Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability
7. Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond
8. Detecting defects that reduce breakdown voltage using machine learning and optical profilometry
9. PtOx Schottky Contacts on Degenerately Doped $$\left( {\overline{2}01} \right)$$ β-Ga2O3 Substrates
10. Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques
11. Silicon Ion Implant Activation in β-(Al0.2Ga0.8)2O3.
12. PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates.
13. Contributors
14. Reduced-stress nanocrystalline diamond films for heat spreading in electronic devices
15. Preface
16. Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging
17. Process Optimization for Selective Area Doping of GaN by Ion Implantation
18. Effect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance
19. Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond.
20. Improving vertical GaN p-n diode performance with room temperature defect mitigation
21. Experimental determination of critical thickness limitations of (010)β -(AlxGa1−x)2O3 heteroepitaxial films
22. Study of anode doping and avalanche in foundry compatible 1.2kV vertical GaN PiN diodes
23. Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging.
24. Microstructural evolution of extended defects in 25μ m thick GaN homo-epitaxial layers
25. Optical characterization and thermal properties of CVD diamond films for integration with power electronics
26. Electrothermal performance of AlGaN/GaN lateral transistors with >10 μm thick GaN buffer on 200 mm diameter engineered substrates
27. Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices
28. Effect of GaN/AlGaN buffer thickness on the electrothermal performance of AlGaN/GaN HEMTs on engineered substrates
29. Design, Packaging, and Empirical Characterization of 1 kV Vertical GaN P-N Diode
30. Novel Co‐doping Moiety to Achieve Enhanced P‐type doping in GaN by Ion Implantation
31. Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance
32. Experimental determination of critical thickness limitations of (010) β-(AlxGa1−x)2O3 heteroepitaxial films.
33. Patient Satisfaction With Medical Student Participation in a Longitudinal Integrated Clerkship: A Controlled Trial
34. Hybrid Edge Termination in Vertical GaN: Approximating Beveled Edge Termination via Discrete Implantations
35. Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties
36. Thermal etching of nanocrystalline diamond films
37. Novel Codoping Moiety to Achieve Enhanced P‐Type Doping in GaN by Ion Implantation.
38. Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates.
39. Microstructural evolution of extended defects in 25 μm thick GaN homo-epitaxial layers.
40. Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility
41. (Invited) Optical Characterization of Bulk GaN Substrates and Homoepitaxial Films
42. A Simple Edge Termination Design for Vertical GaN P-N Diodes
43. Impact of Anode Doping on Avalanche in Vertical GaN Pin Diodes with Hybrid Edge Termination Design
44. Using Data Science and Machine Learning to Predict the Failure Rate of Pin Diodes
45. (Invited) Advancements in Vertical GaN p-n Junction Structures Via p-Type Ion Implantation
46. Impact of Substrate Defects on Vertical GaN Device Leakage Behavior
47. Investigation of the Reverse Leakage Behavior and Substrate Defects in Vertical GaN Schottky and PIN Diodes
48. Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices.
49. Defect reduction in MBE-grown AlN by multicycle rapid thermal annealing
50. Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination
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