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Microstructures arrayed over a substrate have shown increasing interest due to their ability to provide advanced 3D cellular models, which open up new possibilities for cell culture, proliferation, and differentiation. Still, the mechanisms by which physical cues impact the cell phenotype are not fully understood, hence the necessity to interrogate cell behavior at the highest resolution. However, cell 3D high-resolution optical imaging on such microstructured substrates remains challenging due to their complexity as well as axial calibration issues. In this work, we address this issue by leveraging the geometrical characteristics of fractal-like structures, which serve as axial calibration tools and modulate cell growth. To this end, we use multiscale 3D SiO 2 substrates consisting of spatially arrayed octahedral features of a few micrometers to hundreds of nanometers. Through optimizations of both the structures and optical imaging conditions, we demonstrate the potential of these 3D multiscale structures as an alternative to electron microscopy for material imaging but also as calibration tools for 3D super-resolution microscopy. We used their multiscale and known geometry to perform lateral and axial calibrations in 3D single-molecule localization microscopy (SMLM) and assess imaging resolutions. We then utilized these substrates as a platform for high-resolution bioimaging. As a proof of concept, we cultivate human mesenchymal stem cells on these substrates, revealing very different growth patterns compared to flat glass. Specifically, the spatial distribution of cytoskeleton proteins is vastly modified, as we demonstrate with a 3D SMLM assessment.

Low-stress stoichiometric silicon nitride (Si 3 N 4 ) waveguides with an unprecedented thickness of up to 1350 nm and a width in the range of 2.2 - 2.7 µm are fabricated using a single LPCVD step on sapphire substrates (SiNOS). Optical characterization of proof-of-concept ∼1.35 µm thick waveguides show propagation losses in the order of 0.30 ± 0.01 dB/cm at 1600 nm. The proposed process offers a simple route to high confinement Si 3 N 4 waveguides, enabling applications in nonlinear and mid-IR integrated photonics.

Surface enhanced Raman spectroscopy (SERS) is gaining importance as sensing tool. However, wide application of the SERS technique suffers mainly from limitations in terms of uniformity of the plasmonics structures and sensitivity for low concentrations of target analytes. In this work, we present SERS specimens based on periodic arrays of 3D-structures coated with silver, fabricated by silicon top-down micro and nanofabrication (10 mm × 10 mm footprint). Each 3D-structure is essentially an octahedron on top of a pyramid. The width of the top part-the octahedron-was varied from 0.7 µm to 5 µm. The smallest structures reached an analytical enhancement factor (AEF) of 3.9 × 10 7 with a relative standard deviation (RSD) below 20%. According to finite-difference time-domain (FDTD) simulations, the origin of this signal amplification lies in the strong localization of electromagnetic fields at the edges and surfaces of the octahedrons. Finally, the sensitivity of these SERS specimens was evaluated under close-to-reality conditions using a portable Raman spectrophotometer and monitoring of the three vibrational bands of 4-nitrobenzenethiol (4-NBT). Thus, this contribution deals with fabrication, characterization and simulation of multiscale 3D-structures with SERS activity.

High-density arrays of silicon wedges bound by {111} planes on silicon (100) wafers have been created by combining convex corner lithography on a silicon dioxide hard mask with anisotropic, crystallographic etching in a repetitive, self-aligned multiplication procedure. A mean pitch of around 30 nm has been achieved, based on an initial pitch of ∼120 nm obtained through displacement Talbot lithography. The typical resolution of the convex corner lithography was reduced to the sub-10 nm range by employing an 8 nm silicon dioxide mask layer (measured on the {111} planes). Nanogaps of 6 nm and freestanding silicon dioxide flaps as thin as 1-2 nm can be obtained when etching the silicon at the exposed apices of the wedges. To enable the repetitive procedure, it was necessary to protect the concave corners between the wedges through "concave" corner lithography. The produced high-density arrays of wedges offer a promising template for the fabrication of large arrays of nanodevices in various domains with relevant details in the sub-10 nm range., Competing Interests: The authors declare no competing financial interest., (© 2022 The Authors. Published by American Chemical Society.)

The integration of semiconductor Josephson junctions (JJs) in superconducting quantum circuits provides a versatile platform for hybrid qubits and offers a powerful way to probe exotic quasiparticle excitations. Recent proposals for using circuit quantum electrodynamics (cQED) to detect topological superconductivity motivate the integration of novel topological materials in such circuits. Here, we report on the realization of superconducting transmon qubits implemented with (Bi 0.06 Sb 0.94 ) 2 Te 3 topological insulator (TI) JJs using ultrahigh vacuum fabrication techniques. Microwave losses on our substrates, which host monolithically integrated hardmasks used for the selective area growth of TI nanostructures, imply microsecond limits to relaxation times and, thus, their compatibility with strong-coupling cQED. We use the cavity-qubit interaction to show that the Josephson energy of TI-based transmons scales with their JJ dimensions and demonstrate qubit control as well as temporal quantum coherence. Our results pave the way for advanced investigations of topological materials in both novel Josephson and topological qubits.

The interplay of Dirac physics and induced superconductivity at the interface of a 3D topological insulator (TI) with an s-wave superconductor (S) provides a new platform for topologically protected quantum computation based on elusive Majorana modes. To employ such S-TI hybrid devices in future topological quantum computation architectures, a process is required that allows for device fabrication under ultrahigh vacuum conditions. Here, we report on the selective area growth of (Bi,Sb) 2 Te 3 TI thin films and stencil lithography of superconductive Nb for a full in situ fabrication of S-TI hybrid devices via molecular-beam epitaxy. A dielectric capping layer was deposited as a final step to protect the delicate surfaces of the S-TI hybrids at ambient conditions. Transport experiments in as-prepared Josephson junctions show highly transparent S-TI interfaces and a missing first Shapiro step, which indicates the presence of Majorana bound states. To move from single junctions towards complex circuitry for future topological quantum computation architectures, we monolithically integrated two aligned hardmasks to the substrate prior to growth. The presented process provides new possibilities to deliberately combine delicate quantum materials in situ at the nanoscale.

We report a robust and high-yield fabrication method for wafer-scale patterning of high-quality arrays of dense gold nanogaps, combining displacement Talbot lithography based shrink-etching with dry etching, wet etching, and thin film deposition techniques. By using the self-sharpening of <111>-oriented silicon crystal planes during the wet etching process, silicon structures with extremely smooth nanogaps are obtained. Subsequent conformal deposition of a silicon nitride layer and a gold layer results in dense arrays of narrow gold nanogaps. Using this method, we successfully fabricate high-quality Au nanogaps down to 10 nm over full wafer areas. Moreover, the gap spacing can be tuned by changing the thickness of deposited Au layers. Since the roughness of the template is minimized by the crystallographic etching of silicon, the roughness of the gold nanogaps depends almost exclusively on the roughness of the sputtered gold layers. Additionally, our fabricated Au nanogaps show a significant enhancement of surface-enhanced Raman scattering (SERS) signals of benzenethiol molecules chemisorbed on the structure surface, at an average enhancement factor up to 1.5 × 10 6 .

We found that continuous films of gold (Au) on oxidized silicon (SiO 2 ) substrates, upon treatment with ultraviolet (UV)-ozone, exhibit strong adhesion to the SiO 2 support. Importantly, the enhancement is independent of micro- or nanostructuring of such nanometer-thick films. Deposition of a second Au layer on top of the pretreated Au layer makes the adhesion stable for at least 5 months in environmental air. Using this treatment method enables us to large-scale fabricate various SiO 2 -supported Au structures at various thicknesses with dimensions spanning from a few hundreds of nanometers to a few micrometers, without the use of additional adhesion layers. We explain the observed adhesion improvement as polarization-induced increased strength of Au δ- Si δ+ bonds at the Au-SiO 2 interface due to the formation of a gold oxide monolayer on the Au surface by the UV-ozone treatment. Our simple and enabling method thus provides opportunities for patterning Au micro/nanostructures on SiO 2 substrates without an intermediate metallic adhesion layer, which is critical for biosensing and nanophotonic applications.

Periodic noble metal nanoparticles offer a wide spectrum of applications including chemical and biological sensors, optical devices, and model catalysts due to their extraordinary properties. For sensing purposes and catalytic studies, substrates made of glass or fused-silica are normally required as supports, without the use of metallic adhesion layers. However, precise patterning of such uniform arrays of silica-supported noble metal nanoparticles, especially at sub-100 nm in diameter, is challenging without adhesion layers. In this paper, we report a robust method to large-scale fabricate highly ordered sub-20 nm noble metal nanoparticles, i.e., gold and platinum, supported on silica substrates without adhesion layers, combining displacement Talbot lithography (DTL) with dry-etching techniques. Periodic photoresist nanocolumns at diameters of ~110 nm are patterned on metal-coated oxidized silicon wafers using DTL, and subsequently transferred at a 1:1 ratio into anti-reflection layer coating (BARC) nanocolumns with the formation of nano-sharp tips, using nitrogen plasma etching. These BARC nanocolumns are then used as a mask for etching the deposited metal layer using inclined argon ion-beam etching. We find that increasing the etching time results in cone-shaped silica features with metal nanoparticles on the tips at diameters ranging from 100 nm to sub-30 nm, over large areas of 3×3 cm 2 . Moreover, subsequent annealing these sub-30 nm metal nanoparticle arrays at high-temperature results in sub-20 nm metal nanoparticle arrays with ~10 10 uniform particles., Competing Interests: The authors declare that they have no conflict of interest.