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Your search keyword '"Chakraborty, Sombuddha"' showing total 31 results
Start Over Author "Chakraborty, Sombuddha" Publication Year Range Last 10 years
31 results on '"Chakraborty, Sombuddha"'

1. Spurious-Free Lithium Niobate Bulk Acoustic Resonator for Piezoelectric Power Conversion

Author

Nguyen, Kristi, Stolt, Eric, Braun, Weston, Chulukhadze, Vakhtang, Segovia-Fernandez, Jeronimo, Chakraborty, Sombuddha, Rivas-Davila, Juan, and Lu, Ruochen

Subjects
Electrical Engineering and Systems Science - Signal Processing
Abstract

Recently, piezoelectric power conversion has shown great benefits from replacing the bulky and lossy magnetic inductor in a traditional power converter with a piezoelectric resonator due to its compact size and low loss. However, the converter performance is ultimately limited by existing resonator designs, specifically by moderate quality factor (Q), moderate electromechanical coupling (kt2), and spurious modes near resonance. This work reports a spurious-free lithium niobate (LiNbO3) thickness-extensional mode bulk acoustic resonator design, demonstrating Q of 4000 and kt2 of 30% with a fractional suppressed region of 62%. We first propose a novel grounded ring structure for spurious-free resonator design, then validate its performance experimentally. Upon further work, this design could be extended to applications requiring spurious suppression, such as filters, tunable oscillators, transformers, etc., Comment: 4 pages, 6 figures, presented at IEEE IFCS 2023

Published
2023
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24. Push–Pull Class Φ2 RF Power Amplifier.

Author

Gu, Lei, Zulauf, Grayson, Zhang, Zhemin, Chakraborty, Sombuddha, and Rivas-Davila, Juan

Abstract

The Class Φ2/EF2 amplifier is an attractive topology for high-voltage and high-frequency power conversion because of the high efficiency, reduced device voltage stress, simplicity of gate driving, and load-independent ZVS operation. Due to many degrees of freedom for tuning, previous studies can only solve the single-ended Φ2 circuit using numerical methods. This work focuses on improving the design and operating characteristics of a push–pull Φ2 amplifier with a T network connected between the switch nodes, or a PPT Φ2 amplifier. The PPT Φ2 amplifier has less circulating energy and achieves higher cutoff frequency ƒT than other Φ2/EF2 circuits. We, then, present a series-stacked input configuration to reduce the switch voltage stress and improve the efficiency and power density. A compact 6.78-MHz, 100-V, 300-W prototype converter is demonstrated that uses low-cost Si devices and achieves 96% peak total efficiency and maintains above 94.5% drain efficiency across a wide range of voltage and power. Together with the advances in wide-bandgap semiconductors and magnetic materials, the PPT Φ2 circuit opens more possibilities for the state-of-the-art performance of solid-state RF amplifiers in high-frequency, high-power applications, including wireless charging for electric vehicles, plasma RF drives, and nuclear magnetic resonance spectroscopy. [ABSTRACT FROM AUTHOR]

Published
2020
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