1. A behavioral model for MCT surge current analysis in pulse discharge
- Author
-
Zhaoyang Ruan, Ruize Sun, Jianxin Ruan, Wanjun Chen, Xiao Kun, Chao-Fei Peng, Zhaoji Li, Bo Zhang, and Hongzhi Zhu
- Subjects
Physics ,Work (thermodynamics) ,Condensed Matter Physics ,Current analysis ,Electronic, Optical and Magnetic Materials ,Behavioral modeling ,Pulse discharge ,Control theory ,Materials Chemistry ,Electronic engineering ,High current ,Electrical and Electronic Engineering ,Surge ,Current (fluid) ,Constant (mathematics) - Abstract
In this work, a behavioral model for MOS Controlled-Thyristor (MCT) surge current analysis is proposed together with a design criterion. In this model, the relationships between the surge current characteristics including peak current (Ipeak) and high current rising rate (di/dt) of MCT and the device resistance (R) have been discussed, and then a readily measurable parameter, critical resistance (Rc), is presented to estimate the device surge current capability. According to the analytical results, both Ipeak and di/dt of MCT have been found to remain approximately constant with increasing resistance unless its resistance approaches and exceeds this Rc. It is therefore referred to as a design criterion for guiding the device design. The accuracy of the developed model and criterion are verified by comparing the obtained results with those resulting from simulation and experiment results.
- Published
- 2014