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Cu2CdSnS4-CdS nanocomposites are successfully prepared via a two-step solvothermal approach. Powder X-ray diffraction (XRD), Scanning electron microscope (SEM), Photoluminescence (PL) spectroscopy and UV-Vis diffuse reflectance spectroscopy are used to characterized the Cu2CdSnS4-CdS nanocomposites. The results show that Cu2CdSnS4-CdS nanocomposites present nanoflower structure self-assembling by nanosheets with a thickness of 50nm and spheroid structure with the average size of 100nm. The band gap is calculated to be 1.5eV. The photodegradation efficiency under visible-light irradiation is reached to 94%, the work provide a new strategy to prepare Cu2CdSnS4-CdS nanocomposites for high effective visible-light photocatalytic material. [ABSTRACT FROM AUTHOR]

The quaternary alloy of Cu2CdSnS4 (CCSS) is one type of thin film materials that contributes to the field of photovoltaic devices manufacturing, the importance of which has not been commonly enlightened as most of the other materials. For the preparation of CCSS thin films at 350 °C on glass substrates, the chemical spray pyrolysis technique was used. The optical properties of thin films prepared under the influence of the variation of copper solution molarity (0.03, 0.05, 0.07, and 0.09 M) on the quaternary compound were examined using a UV-vis spectrophotometer. The findings of the AFM study showed the atoms on the surface that are acclimatized in the form of nanorods with an increase in the average grain size from 62.72 to 79.17 nm. The results also showed an improvement in the average surface roughness from 5.69 to 12.8 nm when copper concentration increased from 0.03 to 0.09 M. The UVvis results showed that the optical transmittance of CCSS decreases by increasing the solution molarity of copper, with a change in the absorption edge toward the low energy side (redshift). With an increase in the wavelength between 725 and 960 nm, a low absorption coefficient was found in the infrared region, while a strong absorption coefficient in the visible range was observed with the increase in copper solution molarity. The energy gap values decreased from 1.6 to 1.47 eV when copper solution molarity increased from 0.03 to 0.09 M. By raising copper solution molarity to 0.09 M, the refractive index at the absorption edge was increased from 1.6 to 1.97, while the extinction coefficient reduced. [ABSTRACT FROM AUTHOR]

Cu 2 ZnSnS 4 (CZTS) occurs in nature and is the most likely alternative to Cu(In,Ga)Se 2 (CIGS) thin film solar cells, which started to spread increasingly all over the world. CZTS is a very suitable absorber layer material for thin film solar cells due to containing cheap material. It has a 1.5 eV band gap that is appropriate for theoretical Shockley-Queisser limit values, and the large absorption coefficient (104 cm−1). Substitution of different metals and usage of low cost and easy controlled deposition systems may present advantages. Cu 2 CdSnS 4 (CCTS) is a semiconductor with a band gap of 1.37 eV, and it has a large absorption coefficient over 104 cm−1 that makes it a possible photovoltaic material. Its structure is similar to CZTS. In this study, Cu 2 CdSnS 4 thin films were deposited by ultrasonic spray method at various substrate temperatures as an alternative absorber layer. The structural features of the thin films were determined by X-ray diffraction (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS) surface morphology by Scanning Electron Microscopy (SEM) and optical band gaps by UV-VIS-NIR data. A CCTS-based solar cell with 1.14% power conversion efficiency was obtained using the most appropriate thin film according to optical and structural properties. • Cu 2 CdSnS 4 thin films were deposited using ultrasonic spray pyrolysis and annealed in H 2 S/Ar atmosphere. • The influence of substrate temperature on properties of the films were examined. • A solar cell with 1.14% efficiency was obtained. [ABSTRACT FROM AUTHOR]

Here we investigated the photo response behaviour of p -Cu _2 CdSnS _4 ( p -CCTS)/ n -Bi _2 S _3 heterojunction photodiode. The solution processed CCTS films without any high temperature sulfurization demonstrated the photo response behaviour, suggesting the material is well suited for low temperature processed photovoltaic applications. A CCTS film was deposited on an ITO coated glass substrate using simple sol-gel based spin coating method. Current–voltage (I–V) characteristic of the p -CCTS/ n -Bi _2 S _3 heterojunction photodiode showed a good rectifying behaviour indicating better junction formation between CCTS and Bi _2 S _3 layers. The obtained photocurrent is 4 times higher than that of the dark current. The I–V curves are asymmetric with respect to voltages and the photocurrent in the positive bias region is considerably higher than the corresponding values in the negative bias region. With these results, it is concluded that the CdS material in traditional thin film PV devices can be replaced with Bi _2 S _3 for better transportation of charge carriers in the PN -junction.

The development of high-performance nano-luminophores based on luminescent nanomaterials, such as Carbon Nanotubes (CNT) and Quantum Dots (QDs), opens the doors for many potential improvements in luminescent systems and notably Optical Wireless Communication (OWC) systems. Other side, Cu 2 CdSnS 4 quaternary alloy nanostructure has attracted attention in solar cell applications owing to the high optical absorption in visible range. This work presents the feasibility of the infrared uplink Visible Light Communication (VLC) system using Near Infrared Light Emitting Diode (NIR-LED) operating at 780 nm. The used NIR-LED-based Cu 2 CdSnS 4 quaternary alloy nanostructure is to investigate the performance of NIR uplink transmission according to Line of Sight (LOS) channel model. In this transmission, the effect of transmitter orientation and transmitted optical power level with respect to Tx–Rx​ uplink distance are taken into consideration. For this purpose, performance evaluation will be achieved in terms of Bit Error Rate (BER) where we demonstrated satisfactory BER performance (B E R ≥ 1 0 − 9 ) over the entire typical room configuration. In addition, an optimal semi-angle interval and optimal Tx power level has been selected. We further investigated the performance improvement by using several transceivers, compared with a single one on the center of the ceiling. • Possible application of the Cu 2 CdSnS 4 quaternary alloy nanostructure is investigated. • Performance of the proposed system is considered. • Effect of transmitter orientation and transmitted optical power level is presented. [ABSTRACT FROM AUTHOR]

• Synthesis of Cu 2 CdSnS 4 (CCTS) and Cu 2 ZnSnS 4 (CZTS) nanocrystals using low-cost homemade hot-injection method. • First-principles DFT calculated phonon dispersion shows that both CCTS and CZTS are stable at ambient pressure. • Bandgap reduction from 1.51 eV (kesterite- CZTS) to 1.1 eV (stannite-CCTS) is demonstrated. • Fabricated CCTS nanocrystals sensitize solar cell exhibits a power conversion efficiency of 1.1% compared to 0.25% for CZTS. [Display omitted] The Earth-abundant kesterite Cu 2 ZnSnS 4 (CZTS) exhibits outstanding structural, optical, and electronic properties for a wide range of optoelectronic applications. However, the efficiency of CZTS thin-film solar cells is limited due to a range of factors, including electronic disorder, secondary phases, and the presence of anti-site defects, which is a key factor limiting the V oc. The complete substitution of Zn lattice sites in CZTS nanocrystals (NCs) with Cd atoms offers a promising approach to overcome several of these intrinsic limitations. Herein, we investigate the effects of substituting Cd2+ into Zn2+ lattice sites in CZTS NCs through a facile solution-based method. The structural, morphological, optoelectronic, and power conversion efficiencies (PCEs) of the NCs synthesized have been systematically characterized using various experimental techniques, and the results are corroborated by first-principles density functional theory (DFT) calculations. The successful substitution of Zn by Cd is demonstrated to induce a structural transformation from the kesterite phase to the stannite phase, which results in the bandgap reduction from 1.51 eV (kesterite) to 1.1 eV (stannite), which is closer to the optimum bandgap value for outdoor photovoltaic applications. Furthermore, the PCE of the novel Cd-substituted liquid junction solar cell underwent a four-fold increase, reaching 1.1%. These results highlight the importance of substitutional doping strategies in optimizing existing CZTS-based materials to achieve improved device characteristics. [ABSTRACT FROM AUTHOR]