140 results on '"Delabie, Annelies"'
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2. Low-Temperature Dechlorosilylation Chemistry for Area-Selective Deposition of Ge2Sb2Te5 and Its Mechanism in Nanopatterns
3. Probing the spatial dimensions of nanoscale patterns with Rutherford backscattering spectrometry
4. Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides
5. Impact of open‐air processing on atmospheric pressure plasma deposition of poly(ethylene oxide) coatings for antifouling applications
6. Quantification of area-selective deposition on nanometer-scale patterns using Rutherford backscattering spectrometry
7. Chemical Vapor Deposition of a Single-Crystalline MoS2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface
8. Characterization of Ru4-xTax (x = 1,2,3) alloy as material candidate for EUV low-n mask
9. Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility
10. Selectivity and Growth Rate Modulations for Ruthenium Area‐selective Deposition by Co‐Reagent and Nanopattern Design.
11. Chemical Vapor Deposition of a Single-Crystalline MoS2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface.
12. Optimizing extreme ultraviolet lithography imaging metrics as a function of absorber thickness and illumination source: a simulation case study of Ta-Co alloy
13. Quantified Uniformity and Selectivity of TiO2 Films in 45‐nm Half Pitch Patterns Using Area‐Selective Deposition Supercycles
14. A First-Principles Investigation of the Driving Forces Defining the Selectivity of TiO2 Atomic Layer Deposition
15. In situ analysis of nucleation reactions during TiCl4/H2O atomic layer deposition on SiO2 and H-terminated Si surfaces treated with a silane small molecule inhibitor
16. Aminosilane small molecule inhibitors for area-selective deposition: Study of substrate-inhibitor interfacial interactions
17. Enhancing Performance and Function of Polymethacrylate Extreme Ultraviolet Resists Using Area-Selective Deposition
18. Quantified Uniformity and Selectivity of TiO2 Films in 45‐nm Half Pitch Patterns Using Area‐Selective Deposition Supercycles.
19. A First-Principles Investigation of the Driving Forces Defining the Selectivity of TiO2 Atomic Layer Deposition.
20. Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry
21. Nucleation and growth mechanism for atomic layer deposition of Al2O3 on two-dimensional WS2 monolayer
22. Compatibility between polymethacrylate-based extreme ultraviolet resists and TiO2 area-selective deposition
23. Optimizing EUV imaging metrics as a function of absorber thickness and illumination source: simulation case study of Ta-Co alloy
24. (Invited) Nm-Scale Patterns and Selectivity: A Blessing or a Curse
25. (Invited) Metallizations for Advanced Interconnects and Challenges for Future Nodes
26. (Invited) Addressing Key Process and Material Challenges to Enable 2D Transition Metal Dichalcogenide Channels in Advanced Logic Devices
27. Two-dimensional WS2 crystals at predetermined locations by anisotropic growth during atomic layer deposition.
28. Mechanisms for undesired nucleation on H-terminated Si and dimethylamino-trimethylsilane passivated SiO2 during TiO2 area-selective atomic layer deposition
29. In situ analysis of nucleation reactions during TiCl4/H2O atomic layer deposition on SiO2 and H-terminated Si surfaces treated with a silane small molecule inhibitor.
30. Evaluation of Ta-Co alloys as novel high-k EUV mask absorber
31. Improving polymethacrylate EUV resists with TiO2 area-selective deposition
32. Nucleation and growth mechanism for atomic layer deposition of Al2O3 on two-dimensional WS2 monolayer.
33. Selectivity Enhancement for Ruthenium Atomic Layer Deposition in Sub‐50 nm Nanopatterns by Diffusion and Size‐Dependent Reactivity
34. Mechanisms for undesired nucleation on H-terminated Si and dimethylamino-trimethylsilane passivated SiO2 during TiO2 area-selective atomic layer deposition.
35. Optimizing EUV imaging metrics as a function of absorber thickness and illumination source: simulation case study of Ta-Co alloy
36. A chemisorbed interfacial layer for seeding atomic layer deposition on graphite
37. Pulsed chemical vapor deposition of conformal GeSe for application as an OTS selector
38. Building patterns from the bottom: a complementary approach to lithography
39. Area-Selective Deposition of Ruthenium by Area-Dependent Surface Diffusion
40. Improving polymethacrylate EUV resists with TiO2area-selective deposition
41. Evaluation of Ta-Co alloys as novel high-k EUV mask absorber
42. Insight into Selective Surface Reactions of Dimethylamino-trimethylsilane for Area-Selective Deposition of Metal, Nitride, and Oxide
43. Implementation of Atomic Layer Deposition in Advanced Semiconductor Processes
44. Threshold Voltage Control in PMOSFETs with Polysilicon or Fully-Silicided Gates on Hf-Based Gate Dielectric Using Controlled Lateral Oxidation
45. (Invited) Exploring the ALD Al2O3/In0.53Ga0.47As and Al2O3/Ge Interface Properties: A Common Gate Stack Approach for Advanced III-V/Ge CMOS
46. High-k Dielectrics and Interface Passivation for Ge and III/V Devices on Silicon for Advanced CMOS
47. Development of ALD HfZrOx with TDEAH, TDEAZ and H2O
48. Defect Mitigation in Area‐Selective Atomic Layer Deposition of Ruthenium on Titanium Nitride/Dielectric Nanopatterns
49. Beyond SiliconMOS: An Electrical Study on Interface and Gate Dielectrics withacAdmittance Techniques
50. Impact of SiO2 surface composition on trimethylsilane passivation for area-selective deposition
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