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27 results on '"Dong-Bum Seo"'

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1. Plasmonic Ag-Decorated Few-Layer MoS2 Nanosheets Vertically Grown on Graphene for Efficient Photoelectrochemical Water Splitting

2. Controlled Surface Morphology and Electrical Properties of Sputtered Titanium Nitride Thin Film for Metal–Insulator–Metal Structures

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3. Improved Photoelectrochemical Performance of MoS2 through Morphology-Controlled Chemical Vapor Deposition Growth on Graphene

4. Efficient Visible-Light Photocatalysis of TiO2-δ Nanobelts Utilizing Self-Induced Defects and Carbon Doping

5. Defect-Induced Gas-Sensing Properties of a Flexible SnS Sensor under UV Illumination at Room Temperature

9. Surface Passivation of Layered MoSe

11. Synthesis and organic solar cell application of RNA-nucleobase-complexed CdS nanowires

12. Novel high-k gate dielectric properties of ultrathin hydrocarbon films for next-generation metal-insulator-semiconductor devices

15. Facile, cost-effective, nucleobase-mediated chemical deposition of solar absorber Cu2ZnSnS4 films

17. Efficient Visible-Light Photocatalysis of TiO2-δ Nanobelts Utilizing Self-Induced Defects and Carbon Doping

19. Conformal growth of few-layer MoS2 flakes on closely-packed TiO2 nanowires and their enhanced photoelectrochemical reactivity

20. Effect of Growth Methods of InAs Quntum Dots on Infrared Photodetector Properties

21. Facile synthesis and efficient photoelectrochemical reaction of WO3/WS2 core@shell nanorods utilizing WO3∙0.33H2O phase

22. Real Time Message Process Framework for Efficient Multi Business Domain Routing

23. Fe2O3 hierarchical tubular structure decorated with cobalt phosphide (CoP) nanoparticles for efficient photoelectrochemical water splitting

24. MoS2 hydrogen evolution catalysis on p-Si nanorod photocathodes

25. Controllable low-temperature growth and enhanced photoelectrochemical water splitting of vertical SnS2 nanosheets on graphene

26. Effect of few-layer MoS2 flakes deposited ZnO/FTO nanorods on photoelectrochemical characteristic

27. Effect of doping level on high-temperature operation of InAs/GaAs quantum dot infrared photodetectors