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Your search keyword '"Gutierrez-Aitken, Augusto"' showing total 18 results
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18 results on '"Gutierrez-Aitken, Augusto"'

2. V-band electronically reconfigurable metamaterial.

Author

Radisic, Vesna, Hester, Jimmy G., Nguyen, Vinh N., Caira, Nicholas W., DiMarzio, Donald, Hilgeman, Theodore, Larouche, Stéphane, Kaneshiro, Eric, and Gutierrez-Aitken, Augusto

Subjects
METAMATERIALS, HETEROJUNCTIONS, BIPOLAR transistors, RESONATORS, INTEGRATED circuits
Abstract

In this work, we report on a reconfigurable V-band metamaterial fabricated using an InP heterojunction bipolar transistor production process. As designed and fabricated, the implementation uses complementary split ring resonators (cSRRs) and Schottky diodes in both single unit cell and three unit cell monolithic microwave integrated circuits. Each unit cell has two diodes embedded within the gaps of the cSRRs. Reconfigurability is achieved by applying an external bias that turns the diodes on and off, which effectively controls the resonant property of the structure. In order to measure the metamaterial properties, the unit cells are fed and followed by transmission lines. Measured data show good agreement with simulations and demonstrate that the metamaterial structure exhibits resonance at around 65 GHz that can be switched on and off. The three-unit cell transmission line metamaterial shows a deeper resonance and a larger phase change than a single cell, as expected. These are the first reported reconfigurable metamaterials operating at the V-band using the InP high speed device fabrication process. [ABSTRACT FROM AUTHOR]

Published
2017
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3. Integrated photonics for hyperspectral sensing

Author

Sandor-Leahy, Stephanie R., primary, Davis, Richard L., additional, Gutierrez-Aitken, Augusto, additional, Knight, Mark W., additional, Liao, Lushalan B., additional, Loi, Kwok Kwong, additional, and Yoshida, Wayne, additional

Published
2020
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5. 3D Wafer-Scale Integration for RF and Digital Applications

Author

Chang-Chien, Patty, primary, Gutierrez-Aitken, Augusto, additional, Sandhu, Rajinder, additional, Hennig, Kelly, additional, Scott, Dennis, additional, Zhou, Joe, additional, Nam, Peter, additional, Geiger, Craig, additional, Poust, Ben, additional, Parlee, Mattew, additional, Thai, K., additional, Phan, W., additional, and Oyama, B., additional

Published
2019
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7. Heterogeneously Integrated V-Band Amplifier

Author

Radisic, Vesna, primary, Scott, Dennis W., additional, Kaneshiro, Eric, additional, Loi, K.K., additional, Wang, Sujane, additional, Monier, Cedric, additional, and Gutierrez-Aitken, Augusto, additional

Published
2018
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11. (Invited) Diverse Accessible Heterogeneous Integration (DAHI) Foundry at Northrop Grumman Aerospace Systems (NGAS)

Author

Gutierrez-Aitken, Augusto, primary, Scott, Dennis, additional, Sato, Ken, additional, Poust, Ben, additional, Nakamura, Eric, additional, Thai, Khanh, additional, Chan, Wes, additional, Kaneshiro, Eric, additional, Monier, Cedric, additional, Smorchkova, Ioulia, additional, Lin, Nancy, additional, Ferizovic, Dino, additional, Zeng, Xiang, additional, Oki, Aaron, additional, and Kagiwada, Reynold, additional

Published
2017
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12. A Meeting of Materials: Integrating Diverse Semiconductor Technologies for Improved Performance at Lower Cost

Author

Gutierrez-Aitken, Augusto, primary, Wu, Bryan Yi-Cheng, additional, Scott, Dennis, additional, Sato, Ken, additional, Poust, Benjamin, additional, Watanabe, Monte, additional, Monier, Cedric, additional, Lin, Nancy, additional, Zeng, Xiang, additional, Nakamura, Eric, additional, Cheng, Peter, additional, Kaneshiro, Eric, additional, Chan, Wesley, additional, Smorchkova, Ioulia, additional, Thai, Khanh, additional, Wang, Sujane, additional, Slavin, David, additional, Oki, Aaron, additional, and Kagiwada, Reynold, additional

Published
2017
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14. W-band InP transmission line metamaterial

Author

Nguyen, Vinh N., primary, Caira, Nicholas W., additional, Hester, Jimmy G., additional, DiMarzio, Donald, additional, Kaneshiro, Eric, additional, Gutierrez-Aitken, Augusto, additional, and Radisic, Vesna, additional

Published
2017
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15. (Invited) Diverse Accessible Heterogeneous Integration (DAHI) Foundry at Northrop Grumman Aerospace Systems (NGAS)

Author

Gutierrez-Aitken, Augusto, primary, Scott, Dennis, additional, Sato, Ken, additional, Poust, Ben, additional, Nakamura, Eric, additional, Thai, Khanh, additional, Chan, Wes, additional, Kaneshiro, Eric, additional, Monier, Cedric, additional, Smorchkova, Ioulia, additional, Lin, Nancy, additional, Ferizovic, Dino, additional, Zeng, Xiang, additional, Oki, Aaron, additional, and Kagiwada, Reynold, additional

Published
2016
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18. (Invited) Diverse Accessible Heterogeneous Integration (DAHI) Foundry at Northrop Grumman Aerospace Systems (NGAS)

Author

Gutierrez-Aitken, Augusto, Scott, Dennis, Sato, Ken, Poust, Ben, Nakamura, Eric, Thai, Khanh, Chan, Wes, Kaneshiro, Eric, Monier, Cedric, Smorchkova, Ioulia, Lin, Nancy, Ferizovic, Dino, Zeng, Xiang, Oki, Aaron, and Kagiwada, Reynold

Abstract

The performance, size, weight and power requirements for future systems are increasingly demanding. These can be met by intimate integration of lower power and higher performance scaled CMOS and compound semiconductor technologies into smaller areas and volumes. The more adaptable and more intimate is this integration between two or more technologies, the more flexibility is given to the designer for the selection of the technology for a specific function, or even better, for an optimum combination of different transistor technologies in the same function or cell in the design. Northrop Grumman Aerospace Systems (NGAS) under the Diverse Accessible Heterojunction Integration (DAHI) DARPA program is developing integration processes, design kits and thermal simulation tools to integrate submicron CMOS, InP HBT, GaN HEMT and high-Q passive technologies for advanced DoD systems. We have demonstrated integration of NGAS’ InP HBT and GaN HEMT technologies on 65nm and 45nm CMOS wafers.

Published
2016
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