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Your search keyword '"Henner Kampwerth"' showing total 7 results
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7 results on '"Henner Kampwerth"'

1. Systematic Efficiency Improvement for Cu 2 ZnSn(S,Se) 4 Solar Cells By Double Cation Incorporation with Cd and Ge

Author

Jin Hyeok Kim, Mingrui He, Jun Sung Jang, Chang Yan, Yu Zhang, Mahesh P. Suryawanshi, Jialiang Huang, Umesh P. Suryawanshi, Xiaojing Hao, Henner Kampwerth, Kaiwen Sun, Jianjun Li, Jialin Cong, and Martin A. Green

Subjects
Biomaterials, Materials science, Chemical engineering, Electrochemistry, Thin film solar cell, Condensed Matter Physics, Electronic, Optical and Magnetic Materials
Published
2021
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2. Deep‐Level Defect in Quasi‐Vertically Oriented CuSbS 2 Thin Film

Author

Henner Kampwerth, Yiyu Zeng, Xiaojing Hao, Xueyun Zhang, Yuanfang Zhang, Jialiang Huang, Germain Rey, Nicholas J. Ekins-Daukes, Robert Lee Chin, Ziv Hameiri, and Michael P. Nielsen

Subjects
Materials science, Deep level, business.industry, Energy Engineering and Power Technology, Optoelectronics, Electrical and Electronic Engineering, Thin film, business, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials
Published
2020
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4. Photoluminescence and electroluminescence imaging of perovskite solar cells

Author

J.W. Weber, Liangcong Jiang, Mattias K. Juhl, Henner Kampwerth, Thorsten Trupke, Yi-Bing Cheng, Martin A. Green, Arman Mahboubi Soufiani, Ziv Hameiri, and Fuzhi Huang

Subjects
Photoluminescence, Materials science, Renewable Energy, Sustainability and the Environment, business.industry, Open-circuit voltage, Electroluminescence, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Optics, Planck's law, Optoelectronics, Cell structure, Electrical and Electronic Engineering, business, Luminescence, Intensity (heat transfer), Perovskite (structure)
Abstract

Fast camera-based luminescence-imaging measurements on perovskite solar cells are presented. The fundamental correlation between the luminescence intensity and the open circuit voltage predicted by the generalised Planck law is confirmed, enabling various quantitative methods for the detection of efficiency-limiting defects to be applied to this new cell structure. Interstinegly, it is found that this fundamental correlation is valid only for light-soaked devices. Copyright © 2015 John Wiley & Sons, Ltd.

Published
2015
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5. Revealing Nanoscale Domains in Cu2ZnSnS4 Thin Films by Catalyzed Chemical Etching.

Author

Chaowei Xue, Jialiang Huang, Kaiwen Sun, Chang Yan, Henner Kampwerth, and Xiaojing Hao

Subjects
THIN films, SCANNING transmission electron microscopy, SCANNING electron microscopes, LOGNORMAL distribution, ETCHING
Abstract

The presence of ZnS precipitates is common in Cu2ZnSnS4 (CZTS) films due to the preferred Cu-poor and Zn-rich composition for high-efficiency CZTS devices. It is important to identify their distribution in the film as it can serve as a fingerprint for the CZTS forming process. However, limited methods are viable to quantify their distribution as they are small in size and few in number. Herein, a fast and cost-effective chemical treatment is presented that can reveal the nanoscale ZnS domains within CZTS films to be captured under a common scanning electron microscope (SEM). This method exploits a hole-injection process driven by gold catalysis and the band alignment between CZTS and ZnS. ZnS precipitates as small as 10 nm in diameter can be revealed clearly. Using this approach, a characteristic lognormal size distribution of the ZnS precipitates close to the CZTS film surface with a median diameter of 80 nm and a density of around 2 in a 1 μm² surface area is demonstrated. Energy-dispersive X-ray spectroscopy (EDS) mapping and scanning transmission electron microscopy (STEM) imaging further confirm the existence of ZnS precipitates in the film. This method provides a fast means for capturing fingerprints of ZnS precipitations in CZTS process. [ABSTRACT FROM AUTHOR]

Published
2020
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7. Lifetime analysis of laser crystallized silicon films on glass

Author

Anthony Teal, Sven Kühnapfel, Stefan Gall, Henner Kampwerth, Sergey Varlamov, Jialiang Huang, and Daniel Amkreutz

Subjects
Quenching, Photoluminescence, Materials science, Silicon, business.industry, General Physics and Astronomy, chemistry.chemical_element, Laser, law.invention, Condensed Matter::Materials Science, Crystallography, chemistry, law, Transmission electron microscopy, Optoelectronics, Wafer, Thin film, Dislocation, business
Abstract

Only recently, the quality of liquid phase crystallized silicon directly on glass substrates made a huge leap towards the quality of multi-crystalline wafers with open circuit voltages well above 600 mV. In this paper, we investigate the material quality in order to identify the factors limiting further performance improvements. We employ photoluminescence imaging on a state of the art test structure with lifetime calibration by transient photoluminescence. The resulting lifetime map is converted into an effective diffusion length map and the origin of regions with short lifetimes is investigated with electron backscattering and transmission electron microscopy. High local dislocation densities in areas with dissociated coincidence site lattice boundaries were found to be responsible for the localised quenching of the photoluminescence signal.

Published
2015
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