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We demonstrate the codesign and cointegration of an ultracompact silicon photonic receiver and a low-power-consumption (155 mW/channel) two-channel linear transimpedance amplifier array. Operation below the forward error coding (FEC) threshold both for quadrature phase-shift keying (QPSK) and 16-quadrature amplitude modulation (QAM) at 28 Gbaud is demonstrated.

We demonstrate low-voltage waveguide-coupled germanium avalanche photodetectors (APDs) with a (wafer-scale mean) gain×bandwidth product of 140 GHz at -5 V by utilizing a 185-nm-thick Ge layer. An optical receiver based on such an APD operating up to 25 Gb/s is demonstrated.

We present recent results on compact and power efficient C-band distributed feedback lasers through adhesive bonding of a III-V die onto a silicon-on-insulator circuit. A wall-plug efficiency up to 16% is achieved for bias currents below 40 mA. The laser cavity is 180 µm long and a single facet output power up to 11 mW is measured at 20 °C by incorporating a broadband reflector in the silicon waveguide at one side of the cavity. Single mode operation at 1567 nm with a side mode suppression ratio of around 55 dB is demonstrated. By controlling the phase of the external feedback, the laser linewidth is decreased to 28 kHz. Measurement result shows a low relative intensity noise below -150 dB/Hz at 60 mA up to 6 GHz. We also report 20 and 10 Gbps data transmission at a bias current of 50 mA at 20 °C and 40 °C, respectively.

We demonstrate an optical transmitter consisting of a limiting SiGe BiCMOS driver co-designed and co-packaged with a silicon photonic segmented traveling-wave Mach-Zehnder modulator (MZM). The MZM is split into two traveling-wave segments to increase the bandwidth and to allow a 2-bit DAC functionality. Two limiting driver channels are used to drive these segments, allowing both NRZ and PAM4 signal generation in the optical domain. The voltage swing as well as the peaking of the driver output are tunable, hence the PAM4 signal levels can be tuned and possible bandwidth limitations of the MZM segments can be partially alleviated. Generation of 50 Gbaud and 53 Gbaud PAM4 yields a TDECQ of 2.8 and 3.8 dB with a power efficiency of 3.9 and 3.6 pJ/bit, respectively; this is the best reported efficiency for co-packaged silicon transmitters for short-reach datacenter interconnects at these data rates. With this work, we show the potential of limiting drivers and segmented traveling-wave modulators in 400G capable short-reach optical interconnects.

We demonstrate a 200G capable WDM O-band optical transceiver comprising a 4-element array of Silicon Photonics ring modulators (RM) and Ge photodiodes (PD) co-packaged with a SiGe BiCMOS integrated driver and a SiGe transimpedance amplifier (TIA) chip. A 4×50 Gb/s data modulation experiment revealed an average extinction ratio (ER) of 3.17 dB, with the transmitter exhibiting a total energy efficiency of 2 pJ/bit. Data reception has been experimentally validated at 50 Gb/s per lane, achieving an interpolated 10E-12 bit error rate (BER) for an input optical modulation amplitude (OMA) of -9.5 dBm and a power efficiency of 2.2 pJ/bit, yielding a total power efficiency of 4.2 pJ/bit for the transceiver, including heater tuning requirements. This electro-optic subassembly provides the highest aggregate data-rate among O-band RM-based silicon photonic transceiver implementations, highlighting its potential for next generation WDM Ethernet transceivers.

An advanced transmit remote opto-antenna unit is proposed that accomplishes impedance matching between a photodetector and a low-profile antenna in a specified frequency bandwidth, without requiring an area-consuming matching network. This results in a highly compact design, which also avoids the losses and spurious radiation by such an electrically large matching circuit. Instead, the photodetector is almost directly connected to the antenna, which is designed as a conjugate load, such that the extracted and radiated power are optimized. The required input impedance for the antenna is obtained by adopting a half-mode air-filled substrate-integrated-waveguide topology, which also exhibits excellent radiation efficiency. The proposed unit omits electrical amplifiers and is, therefore, completely driven by the signal supplied by an optical fiber when deployed in an analog optical link, except for an externally supplied photodetector bias voltage. Such a highly cost-effective, power-efficient and reliable unit is an important step in making innovative wireless communication systems, which deploy extremely dense attocells of 15 cm × 15 cm, technically and economically feasible. As a validation, a prototype, operating in the Unlicensed National Information Infrastructure radio bands (5.15 GHz-5.85 GHz), is constructed and its radiation properties are characterized in free-space conditions. After normalizing with respect to the optical source's slope efficiency, a maximum boresight gain of 12.0 dBi and a -3 dB gain bandwidth of 1020 MHz (18.6 %) are observed.

Next-generation wireless communication will require increasingly faster data links. To achieve those higher data rates, the shift towards mmWave frequencies and smaller cell sizes will play a major role. Radio-over-Fiber has been proposed as a possible architecture to allow for this shift but is nowadays typically implemented digitally, as CPRI (Common Public Radio Interface). Centralization will be important to keep next-generation architectures cost-effective and therefore shared optical amplification at the central office could be preferable. Unfortunately, limited power handling capabilities of photodetectors still hinder the shift towards centralized optical amplification. Traveling wave photodetectors (TWPDs) have been devised to allow for high-linearity, high-speed opto-electronic conversion. In this paper, an architecture is discussed consisting of such a TWPD implemented on the iSiPP25G silicon photonics platform. A monolithically integrated star coupler is added in the design to provide compact power distribution while preserving the high linearity of the TWPD. The traveling wave structure (using 16 photodetectors) has a measured 3 dB bandwidth of 27.5 GHz and a fairly flat S 21 up to 50 GHz (less than 1 dB extra loss). Furthermore, the output referred third-order intercept point at 28 GHz, is improved from -1.79 dBm for a single Ge photodiode to 20.98 dBm by adopting the traveling wave design.

A BiCMOS chip-based real-time intensity modulation/direct detection spatial division multiplexing system is experimentally demonstrated for both optical interconnects. 100 Gbps/λ/core electrical duobinary (EDB) transmission over 1 km 7-core multicore fiber (MCF) is carried out, achieving KP4 forward error correction (FEC) limit (BER < 2E-4). Using optical dispersion compensation, 7 × 100 Gbps/λ/core transmission of both non-return-to-zero (NRZ) and EDB signals over 10 km MCF transmission is achieved with BER lower than 7% overhead hard-decision FEC limit (BER < 3.8E-3). The integrated low complexity transceiver IC and analog signal processing approach make such a system highly attractive for the high-speed intra-datacenter interconnects.

For the first time, a personal exposimeter (PEX) for 60 GHz radiation measurements is presented. The PEX is designed based on numerical simulations and both on-body and on-phantom calibration measurements to determine the antenna aperture and measurement uncertainty of the PEX. The measurement uncertainty of the PEX is quantified in terms of 50 and 95% prediction intervals of its response. A PEX consisting of three nodes (antennas) with VHH (vertical-horizontal-horizontal) polarization results in a 95% prediction interval of 6.6 dB. A 50% prediction interval of 1.3 dB (factor of 1.3) is obtained for measured power densities which is 3.1 dB lower than a single antenna experiment. The uncertainty is 19.7 dB smaller than that of existing commercial exposimeters at lower frequencies (≤6GHz)., (© The Author 2017. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.)

High-speed interconnects in data-center and campus-area networks crucially rely on efficient and technically simple transmission techniques that use intensity modulation and direct detection (IM/DD) to bridge distances of up to a few kilometers. This requires electro-optic modulators that combine low operation voltages with large modulation bandwidth and that can be operated at high symbol rates using integrated drive circuits. Here we explore the potential of silicon-organic hybrid (SOH) Mach-Zehnder modulators (MZM) for generating high-speed IM/DD signals at line rates of up to 120 Gbit/s. Using a SiGe BiCMOS signal-conditioning chip, we demonstrate that intensity-modulated duobinary (IDB) signaling allows to efficiently use the electrical bandwidth, thereby enabling line rates of up to 100 Gbit/s at bit error ratios (BER) of 8.5 × 10 -5 . This is the highest data rate achieved so far using a silicon-based MZM in combination with a dedicated signal-conditioning integrated circuit (IC). We further show four-level pulse-amplitude modulation (PAM4) at lines rates of up to 120 Gbit/s (BER = 3.2 × 10 -3 ) using a high-speed arbitrary-waveform generator and a 0.5 mm long MZM. This is the highest data rate hitherto achieved with a sub-millimeter MZM on the silicon photonic platform.

In the future, wireless radiofrequency (RF) telecommunications networks will provide users with gigabit-per-second data rates. Therefore, these networks are evolving toward hybrid networks, which will include commonly used macro- and microcells in combination with local ultra-high density access networks consisting of so-called attocells. The use of attocells requires a proper compliance assessment of exposure to RF electromagnetic radiation. This paper presents, for the first time, such a compliance assessment of an attocell operating at 3.5 GHz with an input power of 1 mW, based on both root-mean-squared electric field strength (E rms ) and peak 10 g-averaged specific absorption rate (SAR 10g ) values. The E rms values near the attocell were determined using finite-difference time-domain (FDTD) simulations and measurements by a tri-axial probe. They were compared to the International Commission on Non-Ionizing Radiation Protection's (ICNIRP) reference levels. All measured and simulated E rms values above the attocell were below 5.9 V/m and lower than reference levels. The SAR 10g values were measured in a homogeneous phantom, which resulted in an SAR 10g of 9.7 mW/kg, and used FDTD simulations, which resulted in an SAR 10g of 7.2 mW/kg. FDTD simulations of realistic exposure situations were executed using a heterogeneous phantom, which yielded SAR 10g values lower than 2.8 mW/kg. The studied dosimetric quantities were in compliance with ICNIRP guidelines when the attocell was fed an input power <1 mW. The deployment of attocells is thus a feasible solution for providing broadband data transmission without drastically increasing personal RF exposure. Bioelectromagnetics. 38:295-306, 2017. © 2017 Wiley Periodicals, Inc., (© 2017 Wiley Periodicals, Inc.)

This article presents the flip-chip bonding of vertical-cavity surface-emitting lasers (VCSELs) to silicon grating couplers (GCs) via SU8 prisms. The SU8 prisms are defined on top of the GCs using non-uniform laser ablation process. The prisms enable perfectly vertical coupling from the bonded VCSELs to the GCs. The VCSELs are flip-chip bonded on top of the silicon GCs employing the laser-induced forward transfer (LIFT)-assisted thermocompression technique. An excess loss of < 1 dB at 1.55 µm measured from the bonded assemblies is reported in this paper. The results of high speed transmission experiments performed on the bonded assemblies with clear eye openings up to 20 Gb/s are also presented.

We demonstrate direct modulation of a heterogeneously integrated C-band DFB laser on SOI at 28 Gb/s with a 2 dB extinction ratio. This is the highest direct modulation bitrate so far reported for a membrane laser coupled to an SOI waveguide. The laser operates single mode with 6 mW output power at 100 mA bias current. The 3 dB modulation bandwidth is 15 GHz. Transmission experiments using a 2 km non zero dispersion shifted single mode fiber were performed at 28 Gb/s bitrate using a 2(7)-1 NRZ-PRBS pattern resulting in a 1 dB power penalty.

We present a five-channel wavelength division multiplexed modulator module that heterogeneously integrates a 200 GHz channel-spacing silicon arrayed-waveguide grating multiplexer and a 20 Gbps electro-absorption modulator array, showing the potential for 100 Gbps transmission capacity on a 1.5x0.5 mm² footprint.

We demonstrate low-voltage germanium waveguide avalanche photodetectors (APDs) with a gain × bandwidth product above 100GHz. A photonic receiver based on such a Ge APD, including a 0.13μm SiGe BiCMOS low-noise trans-impedance amplifier and a limiting amplifier, is realized. A 5.8dB sensitivity improvement is demonstrated at -5.9V bias at an avalanche gain of 6 through bit error ratio measurements. The absolute sensitivity in avalanche mode is -23.4dBm and -24.4dBm at a bit error ratio of 1 × 10(-12) and 1 × 10(-9) respectively.