1. The effect of ions on the magnetic moment of vacancy for ion-implanted 4H-SiC.
- Author
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Peng, B., Zhang, Y. M., Dong, L. P., Wang, Y. T., and Jia, R. X.
- Subjects
IONS ,MAGNETIC dipoles ,QUANTUM wells ,EXCITON theory ,POLARITONS ,LIGHT absorption ,BRAGG'S law (Physics) ,BRAGG'S X-ray spectrometer - Abstract
The structural properties and the spin states of vacancies in ion implanted silicon carbide samples are analyzed by experimental measurements along with first-principles calculations. Different types and dosages of ions (N
+ , O+ , and B+ ) were implanted in the 4H-silicon carbide single crystal. The Raman spectra, positron annihilation spectroscopy, and magnetization-magnetic field curves of the implanted samples were measured. The fitting results of magnetization-magnetic field curves reveal that samples implanted with 1×1016 cm-2 N+ and O+ ions generate paramagnetic centers with various spin states of J = 1 and J=0.7, respectively. While for other implanted specimens, the spin states of the paramagnetic centers remain unchanged compared with the pristine sample. According to the positron annihilation spectroscopy and first-principles calculations, the change in spin states originates from the silicon vacancy carrying a magnetic moment of 3.0 μB in the high dosage N-implanted system and 2.0 μB in the O-doped system. In addition, the ratio of the concentration of implanted N ions and silicon vacancies will affect the magnetic moment of VSi . The formation of carbon vacancy which does not carry a local magnetic moment in B-implanted SiC can explain the invariability in the spin states of the paramagnetic centers. These results will help to understand the magnetic moments of vacancies in ion implanted 4H-SiC and provide a possible routine to induce vacancies with high spin states in SiC for the application in quantum technologies and spintronics. [ABSTRACT FROM AUTHOR]- Published
- 2017
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