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Sorting single‐walled carbon nanotubes (SWNTs) that are heterogeneous into homogeneous groups based on their electronic type, chirality, and handedness is crucial for optoelectronic and biological applications. To achieve this, researchers have utilized dispersants with different binding affinities to sort SWNTs according to their chiralities. This review article provides an overview of the methods developed for sorting SWNTs using dispersants, with a particular focus on the role played by dispersant binding affinities. The article is organized into six sections, including an introduction, a background on SWNTs and dispersant‐based individualization of SWNTs, information on dispersants and their binding affinities, separation methods for SWNTs based on controlling the dispersant binding affinity, parameters used to control dispersant binding affinity, and a conclusion. It is hoped that this review will enhance understanding of the intricate interactions between dispersants and SWNTs, leading to the development of new SWNT sorting methods for future applications. [ABSTRACT FROM AUTHOR]

Metal-based electromagnetic interference shielding materials are limited in their application due to their susceptibility to corrosion. They are therefore being replaced by corrosion-resistant polymers and carbon nanotubes. However, it is difficult to disperse carbon nanotubes within polymer matrices as they aggregate because of van der Waals forces. Therefore, to improve the dispersion of carbon nanotubes, we modified thin-wall carbon nanotubes with flavin mononucleotides and tested them by manufacturing a polymer composite. Nylon 12 was chosen as the polymer matrix owing to its excellent abrasion resistance and low wettability. Furthermore, upon annealing the modified carbon nanotubes, the tensile strength of the composite and dispersion after modification increased. When 10 wt% of the annealed modified nanotubes was used, the composite exhibited a sheet resistance of 8.7 Ω/sq and an EMI shielding effectiveness of 29.4 dB in the X-band. The novel composite can be advantageous for use in electronic equipment due to its low weight and flexibility. [ABSTRACT FROM AUTHOR]

Understanding the long-term stability of MoS2 is important for various optoelectronic applications. Herein, we show that the long-term exposure to an oxygen atmosphere for up to a few months results in zigzag (zz)-directional line unzipping of the MoS2 basal plane. In contrast to exposure to dry or humid N2 atmospheres, dry O2 treatment promotes the initial formation of line defects, mainly along the armchair (ac) direction, and humid O2 treatment further promotes ac line unzipping near edges. Further incubation of MoS2 for a few months in an O2 atmosphere results in massive zz-directional line unzipping. The photoluminescence and the strain-doping plot based on two prominent bands in the Raman spectrum show that, in contrast to dry-N2-treated MoS2, the O2-treated MoS2 primarily exhibits hole doping, whereas humid-O2-treated MoS2 mainly exists in a neutral charge state with tension. This study provides a guideline for MoS2 preservation and a further method for generating controlled defects. [ABSTRACT FROM AUTHOR]

Although successfully implemented for optoelectronic devices of two‐dimensional materials, deterministic transfer for thin single‐walled carbon nanotube (SWNT) film has not been realized. Herein, we report a transfer method of few hundreds nanometer‐thick SWNT film to a desired prepatterned substrate position with few micrometer precision. This method comprises poly(methyl methacrylate) (PMMA)‐coated SWNT film, creating surface anisotropy on both sides for SWNT film transfer, and two sets of translators manipulating the film to desired position and angle. Especially, adsorption and desorption of PMMA‐coated SWNT film by each translator were modulated by use of interfacial water which not only promotes PMMA side to the transient sample loader via water capillary and releases the final substrate with capillary assisted sliding. Successful transfer of thin SWNT film with few tens of micrometer precision was achieved and will be beneficial for the preparation of high‐end optoelectronic devices. [ABSTRACT FROM AUTHOR]

A series of dendrimer porphyrins (G nDPM; n = generation of dendrimer, n = 1-3; M = coordination metal, M = freebase, Zn, Pt) were prepared and their photosensitizing properties were compared. All G nDPM exhibited sharp absorption in organic solvents. However, the Soret absorptions of G nDPM(CO2H) in 10 mM phosphate buffer solution (pH = 7.4) are broader than those of G nDPM in organic solvents, indicating inhomogeneous microenvironments of the focal porphyrin derivatives. All G3DPM(CO2H) successfully formed globular polyion complex micelles that were uniform in size. Under dark conditions, all G nDPM(CO2H) showed negligible cytotoxicity. However, all samples exhibited concentration-dependent photocytotoxicity under light irradiation. In vitro photocytotoxicity as well as singlet oxygen generation revealed that G3DPZn(CO2H) is the best dendritic PS of the three different dendrimer porphyrin species. [ABSTRACT FROM AUTHOR]

While the molten salt-catalyzed chemical vapor deposition (CVD) technique is recognized for its effectiveness in producing large-area transition metal chalcogenides, understanding their growth mechanisms involving alkali metals remains a challenge. Here, we investigate the kinetics and mechanism of sodium-catalyzed molybdenum disulfide (MoS 2 ) growth and etching through image analysis conducted using an integrated CVD microscope. Sodium droplets, agglomerated via the thermal decomposition of the sodium cholate dispersant, catalyze the precipitation of supersaturated MoS 2 laminates and induce growth despite fragmentation during this process. Triangular MoS 2 crystals display a distinct self-exhausting exponential behavior and slow growth of thermodynamically favorable crystallographic faces, exhibiting a sulfur-dominant pressure. The growth and etching processes are facilitated by the scooting of sodium droplets along grain edges, displaying comparable rates. Leveraging these kinetics makes it possible to engineer atypical MoS 2 shapes. This combined microscope not only enhances the understanding of growth mechanisms but also contributes to the facile development of next-generation nanomaterials.

Two-dimensional (2D) molybdenum disulfide (MoS₂) field-effect transistors (FETs) have been extensively studied, but most of the FETs with gate insulators have displayed negative threshold voltage values, which indicates the presence of interfacial traps both shallow and deep in energy level. Despite such interface trap issues, reports on trap densities in MoS₂ are quite limited. Here, we probed top-gate MoS₂ FETs with two- (2L), three- (3L), and four-layer (4L) MoS₂/dielectric interfaces to quantify deep-level interface trap densities by photo-excited charge collection spectroscopy (PECCS), and reported the result that deep-level trap densities over 10(12) cm(-2) may exist in the interface and bulk MoS₂ near the interface. Transfer curve hysteresis and PECCS measurements show that shallow traps and deep traps are not that different in density order from each other. We conclude that our PECCS analysis distinguishably provides valuable information on deep level interface/bulk trap densities in 2D-based FETs.