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Relaxor ferrolectrics are important in technological applications due to a strong electromechanical response, energy storage capacity, electrocaloric effect, and pyroelectric energy conversion properties. Current efforts to discover and design new materials in this class generally rely on substitutional doping of known ferroelectrics, as slight changes to local compositional order can significantly affect the Curie temperature, morphotropic phase boundary, and electromechanical responses. In this work, we demonstrate that moving to the strong limit of compositional complexity in an ABO3 perovskite allows stabilization of novel relaxor responses that do not rely on a single narrow phase transition region. Entropy-assisted synthesis approaches are used to create single crystal Ba(Ti0.2Sn0.2Zr0.2Hf0.2Nb0.2)O3 [Ba(5B)O] films. The high levels of configurational disorder present in this system is found to influence dielectric relaxation, phase transitions, nano-polar domain formation, and Curie temperature. Temperature-dependent dielectric, Raman spectroscopy and second-harmonic generation measurements reveal multiple phase transitions, a high Curie temperature of 570 K, and the relaxor ferroelectric nature of Ba(5B)O films. The first principles theory calculations are used to predict possible combinations of cations to quantify the relative feasibility of formation of highly disordered single-phase perovskite systems. The ability to stabilize single-phase perovskites with such a large number of different cations on the B-sites offers new possibilities for designing high-performance materials for piezoelectric, pyroelectric and tunable dielectric applications.

Multiferroic materials have driven significant research interest due to their promising technological potential. Developing new room-temperature multiferroics and understanding their fundamental properties are important to reveal unanticipated physical phenomena and potential applications. Here, a new room temperature multiferroic nanocomposite comprised of an ordered ferrimagnetic spinel LiFe5O8 (LFO) and a ferroelectric perovskite BiFeO3 (BFO) is presented. We observed that lithium (Li)-doping in BFO favors the formation of LFO spinel as a secondary phase during the synthesis of LixBi1-xFeO3 nanoceramics. Multimodal functional and chemical imaging methods are used to map the relationship between doping-induced phase separation and local ferroic properties in both the BFO-LFO composite ceramics and self-assembled nanocomposite thin films. The energetics of phase separation in Li doped BFO and the formation of BFO-LFO composites is supported by first principles calculations. These findings shed light on Li-ion role in the formation of a functionally important room temperature multiferroic and open a new approach in the synthesis of light element doped nanocomposites.

Charge doping in transition metal dichalcogenide is currently a subject of high importance for future electronic and optoelectronic applications. Here we demonstrate chemical doping in CVD grown monolayer (1L) of WS2 by a few commonly used laboratory solvents by investigating the room temperature photoluminescence (PL). The appearance of distinct trionic emission in the PL spectra and quenched PL intensities suggest n-type doping in WS2. The temperature-dependent PL spectra of the doped 1L-WS2 reveal significant enhancement of trion emission intensity over the excitonic emission at low temperature indicating the stability of trion at low temperature. The temperature dependent exciton-trion population dynamic has been modeled using the law of mass action of trion formation. These results shed light on the solution-based chemical doping in 1L WS2 and its profound effect on the photoluminescence which is essential for the control of optical and electrical properties for optoelectronics applications.

We report inelastic light scattering from underdamped plasmons in azetidinium lead bromide (AzPbBr3). The plasmons are very strongly temperature dependent and serve as a soft mode for the semiconductor-insulator phase transition near TC {\guillemotright} 150 K, demonstrating a continuous decrease in hole concentration np(T) by at least a factor of four and implying a nearly tricritical transition. The plasmon frequency and linewidth agree with independent measurements, and the impedance analysis reveals a frequency dependence (modelled by a constant phase element, CPE) that can be identified as due to electron-phonon coupling. The dependence of plasmon frequency upon (TC-T) is analogous to that for magnons in magnetic insulators or soft transverse optical phonons in ferroelectrics and ferroelastics, or for phasons in incommensurately modulated insulators., Comment: 11 pages, 3 figures

The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical, optical, spin and valley related properties. Here, we report on spin polarized tunneling through chemical vapor deposited (CVD) multilayer MoS2 (~7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5 - 2 % has been observed, corresponding to spin polarization of 5 - 10 % in the measured temperature range of 300 - 75 K. First principles calculations for ideal junctions results in a tunnel magnetoresistance up to 8 %, and a spin polarization of 26 %. The detailed measurements at different temperatures and bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomenon that control their performance.

Varying the substrate temperature changes structural and magnetic properties of spinel ferrite NZFO thin films. XRD of films grown at different temperature display only 004 reflections, without any secondary peaks, showing growth orientation along the c axis. We find an increase in crystalline quality of these thin films with the rise of substrate temperature. The surface topography of the thin films grown on various growth temperatures conditions reveal that these films are smooth with low roughness, however the thin films grown at 800 C exhibit lowest average and rms roughness among all thin films. We find iron and nickel to be more oxidized i,e greater Fe and Ni content in films grown and annealed at 700 C and 800 C, compared to those grown at lower temperatures. The magnetic moment is observed to increase with an increase of substrate temperature and all thin films possess high saturation magnetization and low coercive field at room temperature. Films grown at 800 C exhibit a ferrimagnetic paramagnetic phase transition well above room temperature. The observed large magnetizations with soft magnetic behavior in NZFO thin films above room temperature suggest potential application in memory, spintronics, and multifunctional devices., Comment: 12 pages, 5 figures

We report structural, optical, temperature and frequency dependent dielectric, and energy storage properties of pulsed laser deposited (100) highly textured BaZr(x)Ti(1-x)O3 (x = 0.3, 0.4 and 0.5) relaxor ferroelectric thin films on La0.7Sr0.3MnO3/MgO substrates which make this compound as a potential lead-free capacitive energy storage material for scalable electronic devices. A high dielectric constant of ~1400 - 3500 and a low dielectric loss of <0.025 were achieved at 10 kHz for all three compositions at ambient conditions. Ultrahigh stored and recoverable electrostatic energy densities as high as 214 +/- 1 and 156 +/- 1 J/cm3, respectively, were demonstrated at a sustained high electric field of ~3 MV/cm with an efficiency of 72.8 +/- 0.6 % in optimum 30% Zr substituted BaTiO3 composition.

The out-of-plane and in-plane polarization of (Pb0.6Li0.2Bi0.2)(Zr0.2Ti0.8)O3(PLBZT) thin film has studied in the dark and under illumination of a weak light source of a comparable bandgap. A highly oriented PLBZT thin film was grown on LaNiO3 (LNO)/LaAlO3(LAO) substrate by pulsed laser deposition system which illustrates well-saturated polarization and its significant enhancement under illumination of light. We have employed two configurations for polarization characterization; first deals with out of plane polarization with single capacitor under investigation, whereas second demonstrates the two capacitors connected in series via the bottom electrode. Two different configurations were illuminated using different energy sources and their effects were studied. The latter configuration shows a significant change in polarization under illumination of light that may provide an extra degree of freedom for device miniaturization. The polarization was also tested using positive-up & negative-down (PUND) measurements which confirm robust polarization and their switching under illumination., Comment: Accepted in Materials Research Express

There have been a large number of papers on bismuth ferrite (BiFeO3) over the past few years, trying to exploit its room-temperature magnetoelectric multiferroic properties. Although these are attractive, BiFeO3 is not the ideal multiferroic, due to weak magnetization and the difficulty in limiting leakage currents. Thus there is an ongoing search for alternatives, including such materials as gallium ferrite (GaFeO3). In the present work we report a comprehensive study of the perovskite PbTi1-xPdxO3 with 0 < x < 0.3. Our study includes dielectric, impedance and magnetization measurements, conductivity analysis and study of crystallographic phases present in the samples with special attention paid to minor phases, identified as PdO, PbPdO2, and Pd3Pb. The work is remarkable in two ways: Pd is difficult to substitute into ABO3 perovskite oxides (where it might be useful for catalysis), and Pd is magnetic under only unusual conditions (under strain or internal electric fields). The new material, as a PZT derivative, is expected to have much stronger piezoelectric properties than BiFeO3.

We have studied ferroelectricity and photovoltaic effects in atomic layer deposited (ALD) 40-nm thick SnTiO$_{x}$ films deposited directly onto p-type (001)Si substrate. These films showed well-saturated, square and repeatable hysteresis loops with remnant polarization of 1.5 $\mu$C/cm$^{2}$ at room temperature, as detected by out-of-plane polarization versus electric field (P-E) and field cycling measurements. A photo-induced enhancement in ferroelectricity was also observed as the spontaneous polarization increased under white-light illumination. The ferroelectricity exhibits relaxor characteristics with dielectric peak shifting from ca. T = 600 K at f = 1 MHz to ca. 500 K at 100 Hz. Moreover, our films showed ferroelectric photovoltaic behavior under the illumination of a wide spectrum of light, from visible to ultraviolet regions. A combination of experiment and theoretical calculation provided optical band gap of SnTiO$_{x}$ films which lies in the visible range of white light spectra. Our study leads a way to develop green ferroelectric SnTiO$_{x}$ thin films, which are compatible to semiconducting processes, and can be used for various ferroelectric and dielectric applications., Comment: 24 pages, 10 figures

We report ferrielectricity in a single-phase crystal, TSCC -- tris-sarcosine calcium chloride [(CH3NHCH2COOH)3CaCl2]. Ferrielectricity is well known in smectic liquid crystals but almost unknown in true crystalline solids. Pulvari reported it in 1960 in mixtures of ferroelectrics and antiferroelectrics, but only at high fields. TSCC exhibits a second-order displacive phase transition near Tc = 130 K that can be lowered to a Quantum Critical Point at zero Kelvin via Br- or I-substitution, and phases predicted to be antiferroelectric at high pressure and low temperatures. Unusually, the size of the primitive unit cell does not increase. We measure hysteresis loops and polarization below T = 64 K and clear Raman evidence for this transition, as well of another transition near 47-50 K. X-ray and neutron studies below Tc = 130K show there is an antiferroelectric displacement out of plane of two sarcosine groups; but these are antiparallel displacements are of different magnitude, leading to a bias voltage that grows with decreasing T. A monoclinic subgroup C2 may be possible at the lowest temperatures (T<64K or T<48K), but no direct evidence exists for a crystal class lower than orthorhombic., Comment: 21 pages; 8 figures; 25 references

During the last fifteen years, multiferroic (MF) research communities have been searching for an alternative room temperature MF material with large magnetoelectric (ME) coupling for possible applications in high density electronic components, low heat dissipation memory and logic devices. We have studied Pb(Zr0.20Ti0.80)0.70Pd0.30O3-{\delta} (PZTP30) system with an unusually large (30%) palladium occupancy in B site of PZT. This material exhibited a giant ME coupling coefficient ~0.36 mV/cm.Oe. Interestingly, this is the first time any room temperature single phase compound that showed ME trends, and magnitude similar to those in the well established mechanical strain-mediated ferroelectric and ferromagnetic composites; the latter ones are already in the commercial stage as nT/pT magnetic field sensors due to their large ME values. The presence of Pd in PZTP30 has been confirmed by XPS and XRF studies and assigned with related binding energies of Pd+2 and Pd+4 ions as 336.37 eV, 342.9 eV, and 337.53 eV, 343.43 eV, respectively, which may be the origin of room temperature magnetism in Pd substituted PZT ceramics. A sharp first order ferroelectric phase transition was observed at ~569 K (+/-5 K) that is confirmed from dielectric, Raman, and thermal analysis. Both ferromagnetic and ferroelectric orderings with large ME coupling were found above room temperature, a significant step forward in the development of single phase ME material with enhanced functionalities., Comment: 37 pages, 9 figures

Electric field control of magnetism is the key to many next generation spintronics applications1. Ferroelectric control of spin polarization2,3 followed by the electrically driven repeatable magnetization reversal in the absence of applied magnetic field4 have proven to be the milestones in this direction. This article propose how these phenomena could be utilized in a reverse manner to gain control over magnetization even in the absence of electric field. In turn, coexistence of positive5 as well as negative6 magnetocaloric effect (MCE) is attained in tri-layered PbZr0.53Ti0.47O3-CoFe2O4-PbZr0.53Ti0.47O3 (PZT/CFO/PZT) nanostructures for identical temperature ranges when subjected to different applied magnetic fields. Unlike conventional approaches5-9 the present study demonstrate that it is possible to obtain giant MCE merely by magneto-pyroelectric coupling. Consequently, the MCE entropy changes calculated using Maxwell equations are found to be as large as reported for existing giant MCE values6,9,10., Comment: 15 pages, 4 figure and 1 table

We studied switchable photovoltaic and photo-diode characteristics of Pt (Bi0.9Sm0.1)(Fe0.97Hf0.03)O3 LaNiO3 (Pt BSFHO LNO) heterostructures integrated on Si (100). The directions of photocurrent (JSC) and rectification are found to be reversibly switchable after applying external poling voltages. In pristine state, metal-ferroelectric-metal capacitor Pt BSFHO LNO shows JSC 32 microAmp cm2 and VOC 0.04 V, which increase to maximum value of JSC 303 ( 206) microAmp cm2 and VOC 0.32 (0.26) V after upward (downward) poling at 8 V. We believe that Schottky barrier modulation by polarization flipping at Pt BSFHO interface could be a main driving force behind switchable photovoltaic and rectifying diode characteristics of Pt BSFHO LNO heterostructures.

Self-poled ultra-thin ferroelectric PbZr0.52Ti0.48O3 (PZT) (5 and 7 nm) films have been grown by pulsed laser deposition technique on ferromagnetic La0.67Sr0.33MnO3 (LSMO) (30 nm) to check the effect of polar capping on magnetization for ferroelectric tunnel junction (FTJ) devices. PZT/LSMO heterostructures with thick polar PZT (7 nm) capping show nearly 100% enhancement in magnetization compared with thin polar PZT (5 nm) films, probably due to excess hole transfer from the ferroelectric to the ferromagnetic layers. Core-level X-ray photoelectron spectroscopy studies revealed the presence of larger Mn 3s exchange splitting and higher Mn3+/Mn4+ ion ratio in the LMSO with 7 nm polar capping., Comment: 17 pages, 5 figures

High-pressure synchrotron based angle dispersive x-ray diffraction (ADXRD) studies were carried out on SmGdO3 (SGO) up to 25.7GPa at room temperature. ADXRD results indicated a reversible pressure-induced phase transition from ambient monoclinic to hexagonal phase at about 8.9 GPa. The observed pressure-volume data were fitted into the third order Birch-Murnaghan equation of state yielding zero pressure bulk moduli B0 = 132(22) and 177(22) GPa for monoclinic and hexagonal phases, respectively. Pressure dependent micro-Raman spectroscopy further confirmed the phase transition. The mode Gruneisen parameters and pressure coefficients for different Raman modes corresponding to each individual phase of SGO were calculated.